Low-temperature vapour deposition of high-purity copper coatings from bis[N-(fluoroalkyl)salicylaldiminato]copper chelates

Abstract

High-purity copper coatings have been prepared by chemical vapour deposition at low temperature from two nove bis[N-(fluoroalkyl)salicylaldiminato] chelates of copper(II). When hydrogen is used as the carrier gas at ambient pressure, copper coatings containing < 1 atom.% carbon, oxygen, nitrogen, and fluorine are generated at 290 and 330 °C using Cu(NCH₂CF₂CF₃-SAL)₂ and Cu(NCH₂CF₂CF₂CF₃-SAL)₂, respectively (SAL = salicylaldiminato). When the deposition is carried out in vacuo, ca. 6% carbon, 2% oxygen, and 3% fluorine are incorporated into the films using Cu(NCH₂CF₂CF₃-SAL)₂ as the copper source.