The Gibbs adsorption equation has been applied to electrolyte/insulator/semiconductor systems corresponding to those used for chemical field-effect transistors. It is shown that the response of these devices should be 59 mV per decade. The present analysis does not require the a priori assumption of any physical model of the interfacial region.
J. Tietje-Girault and H. H. Girault, J. Chem. Soc., Faraday Trans., 1990, 86, 2249 DOI: 10.1039/FT9908602249
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