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In this paper we present the results of atomistic simulation studies regarding aspects of the diffusion behaviour of Xe in UO2. The effects of a variable lattice stoichiometry and the charge state of the Xe are considered. It is found that although the sites at which Xe atoms are trapped differ markedly with stoichiometry, the mechanism of diffusion of the Xe in these traps is vacancy-assisted in both cases.
R. G. J. Ball and R. W. Grimes, J. Chem. Soc., Faraday Trans., 1990, 86, 1257 DOI: 10.1039/FT9908601257
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