On the microstructure and composition of semi-insulating polycrystalline silicon (SIPOS)
Abstract
Using a range of electron spectroscopic (plasmon, core-electron-edge, X-ray emission) and electron microscopic (high-resolution imaging and optical diffractometry) techniques it is established that unannealed SIPOS is non-crystalline SiO0.50 ± 0.05 and that the annealed form contains microcrystallites of elemental silicon (100Å diameter).