Issue 11, 1983

A high-resolution electron microscopy examination of domain boundaries in crystals of synthetic goethite

Abstract

High-resolution electron microscopy and electron diffraction have been used to elucidate the structure of domain boundaries in crystals of synthetic goethite (α-FeOOH). Composite crystals of acicular α-FeOOH often show single-crystal electron-diffraction patterns and the intergrowths have been observed to be highly coherent across the domain boundaries. Twin crystals have been examined and show diffraction patterns and high-resolution images which correspond to composite crystals mutually rotated by 120° about the [100] axis. These results are discussed in relation to postulated mechanisms of crystal growth and to the dissolution behaviour of goethite in acid solution.

Article information

Article type
Paper

J. Chem. Soc., Faraday Trans. 1, 1983,79, 2679-2684

A high-resolution electron microscopy examination of domain boundaries in crystals of synthetic goethite

R. M. Cornell, S. Mann and A. J. Skarnulis, J. Chem. Soc., Faraday Trans. 1, 1983, 79, 2679 DOI: 10.1039/F19837902679

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