Kinetics and mechanism of the gas phase thermal decomposition of hexachlorodisilane in the presence of iodine
Abstract
The gas phase thermal reaction of Si2Cl6 with I2 has been investigated. Product analysisreveals the formation of SiCl4 and SiCl2I2. The reaction rate was found to obey the rate equation –
The absence of an I atom displacement process suggests that the Si—Si bond in Si2Cl6 is much stronger than that in Si2Me6.