Ab initio calculations on tautomers of CSiH–, CSiH2, and CSiH3+. Examples of the tendency of silicon to avoid formation of multiple bonds with carbon

Alan C. Hopkinson; Min H. Lien

doi:10.1039/C39800000107

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Ab initio calculations on tautomers of CSiH^–, CSiH₂, and CSiH₃⁺. Examples of the tendency of silicon to avoid formation of multiple bonds with carbon

Alan C. Hopkinson and Min H. Lien

Abstract

Ab initio calculations on the energy hyper-surfaces for CSiH^–, CSiH₂, and CSiH₃⁺ reveal one, two, and three minima, respectively, with structures in which all the hydrogens are bonded to carbon being the most stable on each surface.

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DOI: https://doi.org/10.1039/C39800000107
Article type: Paper

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J. Chem. Soc., Chem. Commun., 1980, 107-108

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Ab initio calculations on tautomers of CSiH^–, CSiH₂, and CSiH₃⁺. Examples of the tendency of silicon to avoid formation of multiple bonds with carbon

A. C. Hopkinson and M. H. Lien, J. Chem. Soc., Chem. Commun., 1980, 107 DOI: 10.1039/C39800000107

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Journal of the Chemical Society, Chemical Communications

Ab initio calculations on tautomers of CSiH^–, CSiH₂, and CSiH₃⁺. Examples of the tendency of silicon to avoid formation of multiple bonds with carbon

Abstract

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Ab initio calculations on tautomers of CSiH^–, CSiH₂, and CSiH₃⁺. Examples of the tendency of silicon to avoid formation of multiple bonds with carbon

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