Recoil tritium reactions with CH3SiD3: pressure dependent yields

Abstract

The T + CH₃SiD₃ system has been studied to evaluate the effect of reactant pressure on parent-T yield. The substitution yields for C—H and Si—D bonds have been found to be in the ratio 1 : 1.7. The decomposition rate of the excited parent-T has been calculated on the basis of the above ratio and compared with experimental yields at low pressure. Hypotheses to explain the discrepancy between calculated and experimental values are discussed.