Thermodynamic study of the chemical vapour transport system GaAs–HBr using a modified entrainment method

Abstract

Gallium arsenide is an important semiconducting compound in the manufacture of opto-electronic and microwave electronic devices. The chemical vapour transport system GaAs–HBr was studied using a modified entrainment method. Thermochemical data were obtained for the principal reactions, which were shown to result in the formation of GaBr and GaBr₂ vapour molecules in the temperature range 700–1400 K. There is some evidence of the presence of other gallium species in the vapour.