Issue 18, 1972

Bonding studies of compounds of boron and the group IV elements. Part VIII. Heats of hydrolysis and bond energies for some trimethylmetalyl derivatives Me3M–X(M = Si, Ge, and Sn)

Abstract

The heats of hydrolysis, in aqueous 1 M-hydrochloric acid, of one silicon, five germanium, and eight tin(IV) compounds of type (Me3M)nX (where M = Si, Ge, or Sn, n= 1–3, and X is a univalent ligand in which the donor atom adjacent to M is N, O, S, Cl, Br, or I) to give (Me3Si)2O, (Me3Ge)2O, and (Me3SnOH)2 have been measured. From these, standard heats of formation have been calculated as follows: ΔHf°(Me3Si·OEt), I =–126·4 ± 0·7; ΔHf°[(Me3Ge)2O], I =–136·0 ± 4·0; ΔHf°(Me3GeCl), I =–71·6 ± 2·1; ΔHf°(Me3GeBr), I =–62·1 ± 2·1; ΔHf°(Me3Ge·OEt), I =–95·8 ± 2·2; ΔHf°(Me3Ge·SBun), I =–64·7 ± 2·1; ΔHf°(Me3Ge·NMe2), I =–37·1 ± 2·2; ΔHf°(Me3SnCl), c =–58·4 ± 1·2; ΔHf°(Me3SnBr), c =–48·8 ± 1·3; ΔHf°(Me3SnI), I =–31·2 ± 1·1; ΔHf°(Me3SnOH), c =–90·8 ± 1·2; ΔHf°(Me3Sn·OEt), I =–73·1 ± 1·5; ΔHf°(Me3Sn·SBun), I =–47·1 ± 1·6; ΔHf°(Me3Sn·NMe2), I =–13·3 ± 1·4; ΔHf°[(Me3Sn)2NMe], I =–31·5 ± 2·5; ΔHf°[(Me3Sn)3N], c =–29·2 ± 3·6 kcal mol–1. Gas-phase enthalpies of formation of these compounds and thermochemical bond energy terms E(M–X) have been calculated. Group trends show that, for constant X, E(C–X) < E(Si–X) > E(Ge–X) > E(Sn–X), whereas E(C–Y) > E(Si–Y)(Y = H or Me). Another conclusion is that the ‘softness’(in terms of ΔH of reactions) of the acid Me3M+ increase in the order C < Si < Ge < Sn; several chemical reaction types are examined in this light.

Article information

Article type
Paper

J. Chem. Soc., Dalton Trans., 1972, 1943-1947

Bonding studies of compounds of boron and the group IV elements. Part VIII. Heats of hydrolysis and bond energies for some trimethylmetalyl derivatives Me3M–X(M = Si, Ge, and Sn)

J. C. Baldwin, M. F. Lappert, J. B. Pedley and J. S. Poland, J. Chem. Soc., Dalton Trans., 1972, 1943 DOI: 10.1039/DT9720001943

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Spotlight

Advertisements