Kinetics of the reactions of silicon compounds. Part VII. Unimolecular gas-phase thermal decomposition of 2,2-difluoroethyltrimethoxysilane

Abstract

The gas-phase thermal decomposition of 2,2-difluoroethyltrimethoxysilane into vinyl fluoride and trimethoxy-fluorosilane at 242–328 °C and 2–53 Torr initial pressure is a first-order homogeneous reaction insensitive to the presence of radical inhibitors, and is concluded to be a four-centre unimolecular decomposition. The rate constant is given by log₁₀k/s^–1=(11·04 ± 0·11)–(152·0 ± 1·2) kJ mol^–1/2·303RT