A well-grown β-Ga2O3 microrod array formed from GaOOH on a Si (100) substrate and growth mechanism study

Abstract

A simple two-step hydrothermal method was used to successfully fabricate a well-grown β-Ga₂O₃ microrod array from GaOOH on a Si (100) substrate without other heterogeneous layers, to overcome the relatively large surface energy. Different hydrothermal conditions were used to investigate the growth mechanism of the β-Ga₂O₃/GaOOH microrod array on the silicon substrate. Most significantly, the key role of ethanol in the first-step hydrothermal solution is discussed in light of the change in the adsorption of growing nuclei at the solid–liquid interface.