Issue 37, 2024

Enhanced light-emitting transistors utilizing multi-dimensional CsPbBr3 perovskite films and PVP-modified ZTO semiconductor layers

Abstract

Light-emitting transistors (LETs) uniquely combine the electroluminescent features of LEDs with the switching capabilities of field-effect transistors, offering promising applications in advanced display technology, lighting, electrically pumped lasers, and optical communication systems. This study reports on the fabrication and performance of perovskite light-emitting transistors (PeLETs) using solution-processed CsPbBr3 thin films, enhanced with phenethylammonium bromide (PEABr) and polyethylene oxide (PEO) to create a multi-dimensional mixed phase with a quantum well structure, characterized by a reduced presence of low-dimensional phases and an increased proportion of high-dimensional phases, thereby enhancing exciton recombination efficiency. The incorporation of high-mobility zinc tin oxide (ZTO) films as channel and electron transport layers is investigated. Direct contact between the perovskite and ZTO layers initially leads to an increased off-state current and degraded electrical characteristics of ZTO field-effect transistors (FETs). However, introducing polyvinylpyrrolidone (PVP) as a modification layer significantly improves these characteristics, resulting in a more uniform electric field distribution and consistent surface emission under coplanar electrodes. The optimized PeLET demonstrates mobility of 0.73 cm2 V−1 s−1 and an on–off ratio exceeding 105. High-purity green light emission at 514 nm with a narrow full-width at half-maximum (FWHM) of 19.97 nm is achieved, showcasing the potential of PeLETs in various optoelectronic applications.

Graphical abstract: Enhanced light-emitting transistors utilizing multi-dimensional CsPbBr3 perovskite films and PVP-modified ZTO semiconductor layers

Supplementary files

Article information

Article type
Paper
Submitted
13 Aug 2024
Accepted
27 Aug 2024
First published
28 Aug 2024

J. Mater. Chem. C, 2024,12, 14887-14892

Enhanced light-emitting transistors utilizing multi-dimensional CsPbBr3 perovskite films and PVP-modified ZTO semiconductor layers

X. Zhang, M. Guo, J. Li, B. Song, F. Meng, Z. Wang, Z. Lou, Y. Hou, Y. Hu and F. Teng, J. Mater. Chem. C, 2024, 12, 14887 DOI: 10.1039/D4TC03440F

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