2D MoS2 Photovoltaic Detectors with Switchable Mode

Abstract

Photodetectors based on two-dimensional (2D) materials have demonstrated their advantages of low-cost, high-performance, small-size, flexibility and large-scale manufacture. In this work, the 2D MoS2 based photovoltaic detectors with switchable mode have been achieved through Schottky and lateral PN homojunction. By applying different bias voltage, the photodetection mode can be switched between photodiode and photoconductor, combing the advantageous features of both modes in one device. In the photodiode mode, a significant rectifying and photovoltaic behavior can be achieved and tuned by the gate voltages, achieving fast photo-response speed of ~10 ms. In a photoconductor mode, the photoconductive effect can lead to a photo-gain mechanism, a high responsivity up to 103 A/W and a high detectivity of 4.1×1012 Jones in Schottky device. This work develops a MoS2 photodetector based on Schottky and PN homojunction using a facile method, the switchable operation mode endows our device with capability of customized photodetection application for different needs.