Transport mechanism of copper sulfide embedded carbon nitride thin films: a formation free memristor

Abstract

Nonvolatile electrical resistive behaviour was demonstrated for a copper sulfide nanoparticle decorated carbon nitride (CSCN) based device. The copper sulfide–carbon nitride composite system was synthesized using a high temperature in situ protocol, where the sulfide particles were highly dispersed on the carbon nitride matrix. The CSCN composite was characterized by using different analytical techniques. The transport mechanism of the device followed Poole–Frenkel (PF) for the OFF-state, whereas ohmic behaviour dominated for the ON-state. An endurance study of the device was performed with a duty-cycle of 50% for 2 × 10³ cycles and the nonvolatile behavior of the device was studied with a duty-cycle of 0.16% for 2 × 10³ s. Both the endurance and nonvolatile behavior exhibited excellent stability of the device with an ON to OFF ratio of 10⁴.