Issue 35, 2024

Reliability issues of amorphous oxide semiconductor-based thin film transistors

Abstract

Amorphous oxide semiconductors (AOSs) are non-crystalline compounds composed of metal elements and oxygen elements, possessing distinctive electrical properties. Even in their amorphous state, these materials exhibit favourable carrier transport paths and demonstrate high mobilities. Thin-film transistors (TFTs), as the core devices in active matrix drive systems, have found commercial success in active matrix liquid crystal displays and active matrix organic light-emitting diode displays. Among the choices of active layer materials for TFTs, AOSs have emerged as a potent alternative to traditional Si-based semiconductors, offering irreplaceable advantages in large-area high-definition flat-panel displays. Currently, the reliability concerns regarding AOS TFTs have garnered increasing attention, yet reports on this topic are scattered. Therefore, a comprehensive overview of the aspects is necessary to facilitate further progress in this field. With next-generation display technologies demanding large-area, high-resolution, and high-refresh-rate displays, alongside the challenges presented by future flexible display technologies in coping with complex working scenarios such as bending and stretching, the significance of this research is unmistakable. Critical directions for future research are proposed in an updated, top-tier roadmap to galvanize progress towards AOS TFTs within the community.

Graphical abstract: Reliability issues of amorphous oxide semiconductor-based thin film transistors

Article information

Article type
Review Article
Submitted
05 Apr 2024
Accepted
05 Aug 2024
First published
15 Aug 2024

J. Mater. Chem. C, 2024,12, 13707-13726

Reliability issues of amorphous oxide semiconductor-based thin film transistors

Y. Shen, M. Zhang, S. He, L. Bian, J. Liu, Z. Chen, S. Xue, Y. Zhou and Y. Yan, J. Mater. Chem. C, 2024, 12, 13707 DOI: 10.1039/D4TC01392A

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements