Surface passivation with an electron-donating sulfonate group for high-performance and stable perovskite solar cells

Abstract

Perovskite solar cells (PSCs) have gained significant attention due to their potential for high power conversion efficiency (PCE). However, the presence of surface traps has hindered further improvements in their performance and stability. To address this issue, a post-annealing treatment with functional molecules has emerged as an effective method for mitigating trap-mediated non-radiative recombination. Herein, 4-aminophenyl sulfone (APS), containing a Lewis base group (SO), could interact with uncoordinated Pb²⁺ on the perovskite surface, which not only reduces trap state density but also induces a more p-type surface of the perovskite film. As a result of the APS modification, the device achieved a higher PCE of 23.03%, compared to a pristine device of 21.26%, and the values of open-current voltage (V_OC), short-circuit current density (J_SC), and fill factor (FF) were also improved obviously. Moreover, the APS-modified device demonstrated excellent environmental and thermal stability, maintaining 93% and 90% of its initial PCE after 1000 h at a relative humidity of 30% at room temperature and 200 h in an inert environment at 70 °C, respectively.