Issue 9, 2010

Preparation of a high-concentration nm-size ceramic silicon carbide slurry for the ICP-OES determination of ultra-trace impurities in a sample

Abstract

A high-concentration with low viscosity ceramic silicon carbide (SiC) slurry prepared for ICP-OES determination of ultra-trace impurities is described in this paper. Good fluidity can be kept up to the slurry concentration as high as 30% (m v−1) by adding 2% polyethylene imine (PEI) as a dispersant at pH 4.0. Stability of the high content slurry of nm-size SiC is characterized by zeta potential measurement and viscosity measurement, and medium pH is experimentally optimized. The analysis can be calibrated using simple aqueous standards in case a high-concentration slurry is nebulized. Owing to extremely low blanks and unusually highly slurry concentration (20% m v−1), extraordinarily low limits of detection ranging from 2 (Mn, Ti) to 100 (Al) ng g−1 could be achieved.

Graphical abstract: Preparation of a high-concentration nm-size ceramic silicon carbide slurry for the ICP-OES determination of ultra-trace impurities in a sample

Article information

Article type
Technical Note
Submitted
18 Aug 2009
Accepted
05 May 2010
First published
27 May 2010

J. Anal. At. Spectrom., 2010,25, 1482-1484

Preparation of a high-concentration nm-size ceramic silicon carbide slurry for the ICP-OES determination of ultra-trace impurities in a sample

Z. Wang, J. Zhang, D. Qiu, H. Zou, H. Qu, Y. Chen and P. Yang, J. Anal. At. Spectrom., 2010, 25, 1482 DOI: 10.1039/B917066A

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