From the journal:

Materials Horizons

Correction: Highly-efficient and scalable TrioN (3N0C) synaptic cell for analog process-in-memory

Junyoung Choi,a   Byoungwoo Lee,a   Jinho Byun,a   Hyejin Kim,a   Seungkun Kim,a   Junyong Lee,a   Hyunjeong Kwak,a   Jeonghoon Sona  and  Seyoung Kim*a  

* Corresponding authors

a Department of Materials Science and Engineering, Postech, Pohang, Republic of Korea
E-mail: kimseyoung@postech.ac.kr
Tel: +010 9797 0779

Abstract

Correction for ‘Highly-efficient and scalable TrioN (3N0C) synaptic cell for analog process-in-memory’ by Junyoung Choi et al., Mater. Horiz., 2025, 12, 7509–7519, https://doi.org/10.1039/D5MH00324E.

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Article information

DOI
https://doi.org/10.1039/D6MH90009G
Article type
Correction
Submitted
15 Jan 2026
Accepted
15 Jan 2026
First published
23 Jan 2026
This article is Open Access
Creative Commons BY license

Mater. Horiz., 2026, Advance Article

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Correction: Highly-efficient and scalable TrioN (3N0C) synaptic cell for analog process-in-memory

J. Choi, B. Lee, J. Byun, H. Kim, S. Kim, J. Lee, H. Kwak, J. Son and S. Kim, Mater. Horiz., 2026, Advance Article , DOI: 10.1039/D6MH90009G

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