Comment on “Electron-interfered field-effect transistors as a sensing platform for detecting a delicate surface chemical reaction” by G. Choi, K. Lee, S. Oh, J. Seo, E. Park, Y. D. Park, J. Lee and H. S. Lee, J. Mater. Chem. C, 2021, 9, 8179

Abstract

This comment critically examines the recently proposed electron-interfered field-effect transistors (EIFETs), which are a modification of organic charge-modulated field-effect transistors (OCMFETs). Despite the potential of EIFETs, as suggested by Choi et al. (J. Mater. Chem. C, 2021, 9, 8179, https://doi.org/10.1039/D1TC01073E), discrepancies in experimental results and theoretical predictions raise questions about their operational mechanisms, which this comment seeks to address. Through an analysis of the device structure and operating principles, we demonstrate that the proposed EIFET cannot detect molecular adsorption because charge accumulation generates a gate current rather than the claimed threshold voltage shifts.

Graphical abstract: Comment on “Electron-interfered field-effect transistors as a sensing platform for detecting a delicate surface chemical reaction” by G. Choi, K. Lee, S. Oh, J. Seo, E. Park, Y. D. Park, J. Lee and H. S. Lee, J. Mater. Chem. C, 2021, 9, 8179

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Article information

Article type
Comment
Submitted
15 Jul 2025
Accepted
09 Mar 2026
First published
09 Apr 2026
This article is Open Access
Creative Commons BY-NC license

J. Mater. Chem. C, 2026, Advance Article

Comment on “Electron-interfered field-effect transistors as a sensing platform for detecting a delicate surface chemical reaction” by G. Choi, K. Lee, S. Oh, J. Seo, E. Park, Y. D. Park, J. Lee and H. S. Lee, J. Mater. Chem. C, 2021, 9, 8179

M. Micjan and M. Weis, J. Mater. Chem. C, 2026, Advance Article , DOI: 10.1039/D5TC02689J

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