Correction: Recent progress in eutectic gallium indium (EGaIn): surface modification and applications

Wensong Ge; Rui Wang; Xiaoyang Zhu; Houchao Zhang; Luanfa Sun; Fei Wang; Hongke Li; Zhenghao Li; Xinyi Du; Huangyu Chen; Fan Zhang; Huifa Shi; Huiqiang Hu; Yongming Xi; Jiankang He; Liang Hu; Hongbo Lan

doi:10.1039/D4TA90010C

Correction: Recent progress in eutectic gallium indium (EGaIn): surface modification and applications

Wensong Ge,^a Rui Wang,^a Xiaoyang Zhu,*^a Houchao Zhang,^a Luanfa Sun,^a Fei Wang,^a Hongke Li,^a Zhenghao Li,^a Xinyi Du,^a Huangyu Chen,^a Fan Zhang,^a Huifa Shi,^a Huiqiang Hu,^b Yongming Xi,^b Jiankang He,^c Liang Hu*^d and Hongbo Lan*^a

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* Corresponding authors

^a Key Laboratory of Additive Manufacturing and Applications in Universities of Shandong, Shandong Engineering Research Center for Additive Manufacturing, Qingdao University of Technology, Qingdao 266520, China
E-mail: zhuxiaoyang@qut.edu.cn, hblan99@126.com

^b Department of Spinal Surgery, The Affiliated Hospital of Qingdao University, Qingdao 266003, China

^c Xi’an Jiaotong University, Xi’an 710049, China

^d Key Laboratory of Biomechanics and Mechanobiology, Ministry of Education, Beijing Advanced Innovation Center for Biomedical Engineering, School of Biological Science and Medical Engineering, Beihang University, Beijing 100191, China
E-mail: cnhuliang@buaa.edu.cn

Abstract

Correction for ‘Recent progress in eutectic gallium indium (EGaIn): surface modification and applications’ by Wensong Ge et al., J. Mater. Chem. A, 2024, 12, 657–689, https://doi.org/10.1039/D3TA04798A.

Journal of Materials Chemistry A

Correction: Recent progress in eutectic gallium indium (EGaIn): surface modification and applications

Abstract

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