Issue 18, 2024
From the journal:

Materials Horizons

Correction: High-performance one-dimensional halide perovskite crossbar memristors and synapses for neuromorphic computing

Sujaya Kumar Vishwanath,*a   Benny Febriansyah,b   Si En Ng,a   Tisita Das,c   Jyotibdha Acharya,d   Rohit Abraham John,a   Divyam Sharma,a   Putu Andhita Dananjaya,e   Metikoti Jagadeeswararao,b   Naveen Tiwari,a   Mohit Ramesh Chandra Kulkarni,a   Wen Siang Lew,e   Sudip Chakraborty,*c   Arindam Basuf  and  Nripan Mathews*ab  

* Corresponding authors

a School of Materials Science & Engineering, Nanyang Technological University, Singapore
E-mail: sujayav@iisc.ac.in, nripan@ntu.edu.sg

b Energy Research Institute@NTU (ERI@N), Nanyang Technological University, Singapore

c Materials Theory for Energy Scavenging (MATES) Lab, Harish-Chandra Research Institute(HRI) Allahabad, HBNI, Chhatnag Road, Jhunsi, Prayagraj (Allahabad), India
E-mail: sudiphys@gmail.com

d School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore

e School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore

f Department of Electrical Engineering, City University of Hong Kong, Hong Kong

Abstract

Correction for ‘High-performance one-dimensional halide perovskite crossbar memristors and synapses for neuromorphic computing’ by Sujaya Kumar Vishwanath et al., Mater. Horiz., 2024, 11, 2643–2656, https://doi.org/10.1039/D3MH02055J.

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Article information

DOI
https://doi.org/10.1039/D4MH90073A
Article type
Correction
Submitted
03 Jul 2024
Accepted
03 Jul 2024
First published
29 Aug 2024
This article is Open Access
Creative Commons BY license

Mater. Horiz., 2024,11, 4519-4519

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Correction: High-performance one-dimensional halide perovskite crossbar memristors and synapses for neuromorphic computing

S. K. Vishwanath, B. Febriansyah, S. E. Ng, T. Das, J. Acharya, R. A. John, D. Sharma, P. A. Dananjaya, M. Jagadeeswararao, N. Tiwari, M. R. C. Kulkarni, W. S. Lew, S. Chakraborty, A. Basu and N. Mathews, Mater. Horiz., 2024, 11, 4519 DOI: 10.1039/D4MH90073A

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