Correction: First-principles calculations of interfacial thermal transport properties between SiC/Si substrates and compounds of boron with selected group V elements

Zhehao Sun; Kunpeng Yuan; Xiaoliang Zhang; Dawei Tang

doi:10.1039/D4CP90137A

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Correction: First-principles calculations of interfacial thermal transport properties between SiC/Si substrates and compounds of boron with selected group V elements

Zhehao Sun,^a Kunpeng Yuan,^a Xiaoliang Zhang*^a and Dawei Tang*^a

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* Corresponding authors

^a Key Laboratory of Ocean Energy Utilization and Energy Conservation of Ministry of Education, School of Energy and Power Engineering, Dalian University of Technology, Dalian, China
E-mail: zhangxiaoliang@dlut.edu.cn, dwtang@dlut.edu.cn

Abstract

Correction for ‘First-principles calculations of interfacial thermal transport properties between SiC/Si substrates and compounds of boron with selected group V elements’ by Zhehao Sun et al., Phys. Chem. Chem. Phys., 2019, 21, 6011–6020, https://doi.org/10.1039/C8CP07516F.

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DOI: https://doi.org/10.1039/D4CP90137A
Article type: Correction
Submitted: 26 Jul 2024
Accepted: 26 Jul 2024
First published: 07 Aug 2024
This article is Open Access

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Phys. Chem. Chem. Phys., 2024,26, 22292-22292

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Correction: First-principles calculations of interfacial thermal transport properties between SiC/Si substrates and compounds of boron with selected group V elements

Z. Sun, K. Yuan, X. Zhang and D. Tang, Phys. Chem. Chem. Phys., 2024, 26, 22292 DOI: 10.1039/D4CP90137A

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Physical Chemistry Chemical Physics

Correction: First-principles calculations of interfacial thermal transport properties between SiC/Si substrates and compounds of boron with selected group V elements

Abstract

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Correction: First-principles calculations of interfacial thermal transport properties between SiC/Si substrates and compounds of boron with selected group V elements

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