Correction: Electrical characteristics and photodetection mechanism of TiO2/AlGaN/GaN heterostructure-based ultraviolet detectors with a Schottky junction

Teng Zhan; Jianwen Sun; Tao Feng; Yulong Zhang; Binru Zhou; Banghong Zhang; Junxi Wang; Pasqualina M. Sarro; Guoqi Zhang; Zewen Liu; Xiaoyan Yi; Jinmin Li

doi:10.1039/D3TC90039H

Correction: Electrical characteristics and photodetection mechanism of TiO₂/AlGaN/GaN heterostructure-based ultraviolet detectors with a Schottky junction

Teng Zhan,^ac Jianwen Sun,^b Tao Feng,^ac Yulong Zhang,^b Binru Zhou,^ac Banghong Zhang,^ac Junxi Wang,^ac Pasqualina M. Sarro,^d Guoqi Zhang,^d Zewen Liu,*^b Xiaoyan Yi*^ac and Jinmin Li*^ac

Author affiliations

* Corresponding authors

^a Research and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Qinghua East Road 35A, Beijing, China
E-mail: spring@semi.ac.cn, jmli@semi.ac.cn

^b School of Integrated Circuits, Tsinghua University, Beijing, China
E-mail: liuzw@tsinghua.edu.cn

^c College of Materials Sciences and Opto-Electronic Technology, University of Chinese Academy of Sciences, No. 19A Yuquan Road, Beijing, China

^d Department of Microelectronics, Delft University of Technology, 2628 CD Delft, The Netherlands

Abstract

Correction for ‘Electrical characteristics and photodetection mechanism of TiO₂/AlGaN/GaN heterostructure-based ultraviolet detectors with a Schottky junction’ by Teng Zhan et al., J. Mater. Chem. C, 2023, 11, 1704–1713, https://doi.org/10.1039/D2TC04491A.

Journal of Materials Chemistry C

Correction: Electrical characteristics and photodetection mechanism of TiO₂/AlGaN/GaN heterostructure-based ultraviolet detectors with a Schottky junction

Abstract

Associated articles

Article information

Download Citation

Permissions

Correction: Electrical characteristics and photodetection mechanism of TiO₂/AlGaN/GaN heterostructure-based ultraviolet detectors with a Schottky junction

Social activity

Search articles by author

Spotlight

Advertisements