Correction: Integration of BiFeO3/La0.7Sr0.3MnO3 heterostructures with III–V semiconductors for low-power non-volatile memory and multiferroic field effect transistors

Md. Shafiqur Rahman; Susmita Ghose; Liang Hong; Pradip Dhungana; Abbas Fahami; Javad R. Gatabi; Juan S. Rojas-Ramirez; Alex Zakhidov; Robert F. Klie; R. K. Pandey; Ravi Droopad

doi:10.1039/C8TC90155D

Correction: Integration of BiFeO₃/La_0.7Sr_0.3MnO₃ heterostructures with III–V semiconductors for low-power non-volatile memory and multiferroic field effect transistors

Md. Shafiqur Rahman,*^a Susmita Ghose,^a Liang Hong,^b Pradip Dhungana,^c Abbas Fahami,^a Javad R. Gatabi,^a Juan S. Rojas-Ramirez,^d Alex Zakhidov,^ac Robert F. Klie,^b R. K. Pandey^d and Ravi Droopad^d

Author affiliations

* Corresponding authors

^a Material Science, Engineering and Commercialization, Texas State University, San Marcos, TX 78666, USA
E-mail: m_r424@txstate.edu

^b Department of Physics, University of Illinois at Chicago, Chicago, IL 60607, USA

^c Department of Physics, Texas State University, San Marcos, TX 78666, USA

^d Ingram School of Engineering, Texas State University, San Marcos, TX 78666, USA

Abstract

Correction for ‘Integration of BiFeO₃/La_0.7Sr_0.3MnO₃ heterostructures with III–V semiconductors for low-power non-volatile memory and multiferroic field effect transistors’ by Md. Shafiqur Rahman et al., J. Mater. Chem. C, 2016, 4, 10386–10394.

Journal of Materials Chemistry C

Correction: Integration of BiFeO₃/La_0.7Sr_0.3MnO₃ heterostructures with III–V semiconductors for low-power non-volatile memory and multiferroic field effect transistors

Abstract

Associated articles

Article information

Download Citation

Permissions

Correction: Integration of BiFeO₃/La_0.7Sr_0.3MnO₃ heterostructures with III–V semiconductors for low-power non-volatile memory and multiferroic field effect transistors

Social activity

Search articles by author

Spotlight

Advertisements