Issue 14, 2016
From the journal:

Nanoscale

Correction: Fabrication of poly-crystalline Si-based Mie resonators via amorphous Si on SiO2 dewetting

Meher Naffouti,ab   Thomas David,a   Abdelmalek Benkouider,a   Luc Favre,a   Antoine Ronda,a   Isabelle Berbezier,a   Sebastien Bidault,c   Nicolas Bonodd  and  Marco Abbarchi*a  

* Corresponding authors

a CNRS, Aix-Marseille Université, Centrale Marseille, IM2NP, UMR 7334, Campus de St. Jérôme, 13397 Marseille, France
E-mail: marco.abbarchi@im2np.fr

b Laboratoire de Micro-Optoélectroniques et Nanostructures, Faculté des Sciences de Monastir, Université de Monastir, Monastir 5019, Tunisia

c ESPCI ParisTech, PSL Research University, CNRS, 1 rue Jussieu, F-75005 Paris, France

d CNRS, Aix-Marseille Université, Centrale Marseille, Institut Fresnel, UMR 7249, Campus de St. Jérôme, 13397 Marseille, France

Abstract

Correction for ‘Fabrication of poly-crystalline Si-based Mie resonators via amorphous Si on SiO2 dewetting’ by Meher Naffouti, et al., Nanoscale, 2016, 8, 2844–2849.

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Article information

DOI
https://doi.org/10.1039/C6NR90067D
Article type
Correction
Submitted
11 Mar 2016
Accepted
11 Mar 2016
First published
18 Mar 2016
This article is Open Access
Creative Commons BY license

Nanoscale, 2016,8, 7768-7768

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Correction: Fabrication of poly-crystalline Si-based Mie resonators via amorphous Si on SiO2 dewetting

M. Naffouti, T. David, A. Benkouider, L. Favre, A. Ronda, I. Berbezier, S. Bidault, N. Bonod and M. Abbarchi, Nanoscale, 2016, 8, 7768 DOI: 10.1039/C6NR90067D

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