Correction: Atomic layer deposition of a MoS2 film
Abstract
Correction for ‘Atomic layer deposition of a MoS2 film’ by Lee Kheng Tan et al., Nanoscale, 2014, 6, 10584–10588.
Maintenance work is planned from 21:00 BST on Sunday 18th August 2024 to 21:00 BST on Monday 19th August 2024, and on Thursday 29th August 2024 from 11:00 to 12:00 BST.
During this time the performance of our website may be affected - searches may run slowly, some pages may be temporarily unavailable, and you may be unable to log in or to access content. If this happens, please try refreshing your web browser or try waiting two to three minutes before trying again.
We apologise for any inconvenience this might cause and thank you for your patience.
* Corresponding authors
a
Department of Chemistry and Graphene Research Centre, National University of Singapore, 3 Science Drive 3, Singapore 117543
E-mail:
chmlohkp@nus.edu.sg
b A*STAR Institute of Materials Research and Engineering, 3 Research Link, Singapore 117602
c Department of Physics and Graphene Research Centre, National University of Singapore, 2 Science Drive 3, Singapore 117551
d Singapore University of Technology and Design, 20 Dover Dr, Singapore 138682
Correction for ‘Atomic layer deposition of a MoS2 film’ by Lee Kheng Tan et al., Nanoscale, 2014, 6, 10584–10588.
L. K. Tan, B. Liu, J. H. Teng, S. Guo, H. Y. Low and K. P. Loh, Nanoscale, 2014, 6, 14002 DOI: 10.1039/C4NR90076F
This article is licensed under a Creative Commons Attribution 3.0 Unported Licence. You can use material from this article in other publications without requesting further permissions from the RSC, provided that the correct acknowledgement is given.
Read more about how to correctly acknowledge RSC content.
Fetching data from CrossRef.
This may take some time to load.
Loading related content