Unique switching mode of HfO2 among fluorite-type ferroelectric candidates

Ge-Qi Mao, Heng Yu, Kan-Hao Xue, Jinhai Huang, Zijian Zhou and Xiangshui Miao

J. Mater. Chem. C, 2024, 12, 15463
DOI: 10.1039/D4TC02418D

Differentiating the origins of local charge transfer in oxides and hybrid halides by accumulating charge

Chenxi Wang, Panithan Sriboriboon, Owoong Kwon, Seo-Ryeong Lee, Myeong Seop Song, Jin-Wook Lee, Seung Chul Chae and Yunseok Kim

Mater. Horiz., 2025, 12, 3462
DOI: 10.1039/D4MH01601G

Ultra-low-voltage operation, large ferroelectric polarization, fast switching speed, and high endurance of 450 °C processed HZO thin films by starting-layer engineering

Jintai Liu, Binjian Zeng, Qijun Yang, Zhibin Yang, Tao Yu, Changfan Ju, Shuaizhi Zheng, Qiangxiang Peng, Yichun Zhou, Qiong Yang and Min Liao

Journal of Materials Science & Technology, 2026, 241, 311
DOI: 10.1016/j.jmst.2025.03.067

Reduced coercive field and enhanced ferroelectric polarization of Hf0.5Zr0.5O2 film through electric-field-assisted rapid annealing

Jiachen Li, Weijin Pan, Zhengxu Zhu, Hansheng Zhu, Yuchen Wang, Shengchun Shen, Yuewei Yin and Xiaoguang Li

Journal of Materiomics, 2025, 11, 101061
DOI: 10.1016/j.jmat.2025.101061

Monte Carlo Modeling of Growth Delay in Atomic Layer Deposited WS2 on SiO2 Substrate Based on Kinetic Extrapolation of Reaction Entropy and Enthalpy

Komal Mishra, Vivek Kumar and Arnab Datta

IEEE Trans. Nanotechnology, 2023, 22, 785
DOI: 10.1109/TNANO.2023.3329668

Demonstration of Wake-Up Free 6 nm Ultrathin ZrO₂-HfO₂ Superlattice Ferroelectric Capacitors With High Endurance Against Fatigue

Yan-Kui Liang, Zhenhong Liu, Zuocheng Cai, Xueyang Han, Huai-Ying Huang, Yu-Ming Lin, Edward Yi Chang, Chun-Hsiung Lin, Mitsuru Takenaka, Kasidit Toprasertpong and Shinichi Takagi

IEEE Electron Device Lett., 2024, 45, 1468
DOI: 10.1109/LED.2024.3410378

Optimization of Ferroelectric Properties of HfO2-Based Thin Films by Ion Irradiation

Ningtao Liao, Xin Lin, Bingyan Zhu, Xiangli Zhong, Limei Jiang and Xiaoping Ouyang

IEEE Trans. Nucl. Sci., 2024, 71, 1208
DOI: 10.1109/TNS.2024.3383160

High-Performance Negative Capacitance Field-Effect Transistors with Synthetic Monolayer MoS2

Moonyoung Jung, Hyo-Bae Kim, Yungyeong Park, Jeongmin Park, Hyeonseo Lee, Seunghyun Oh, Ki Kang Kim, Ji-Hoon Ahn, Yeonghun Lee, Junhong Na and Dongseok Suh

ACS Nano, 2025, 19, 17503
DOI: 10.1021/acsnano.4c18973

Low-voltage polarization switching in ferroelectric FinFET-based memory devices, using electric field nonlinearities

Shreyam Natani and P. R. Bandaru

J Comput Electron, 2025, 24
DOI: 10.1007/s10825-025-02341-2

Low‐Temperature Nanosecond Laser Process of HZO‐IGZO FeFETs toward Monolithic 3D System on Chip Integration

Dongsu Kim, Heejae Jeong, Goeun Pyo, Su Jin Heo, Seunghun Baik, Seonhyoung Kim, Hong Soo Choi, Hyuk‐Jun Kwon and Jae Eun Jang

Advanced Science, 2024, 11
DOI: 10.1002/advs.202401250

Reconfigurable Multifunctional van der Waals Ferroelectric Devices and Logic Circuits

Ankita Ram, Krishna Maity, Cédric Marchand, Aymen Mahmoudi, Aseem Rajan Kshirsagar, Mohamed Soliman, Takashi Taniguchi, Kenji Watanabe, Bernard Doudin, Abdelkarim Ouerghi, Sven Reichardt, Ian O’Connor and Jean-Francois Dayen

ACS Nano, 2023, 17, 21865
DOI: 10.1021/acsnano.3c07952

Interface‐Modulated Antiferroelectric‐to‐Ferroelectric‐Like Transition in Ultrathin Hf0.5Zr0.5O2 Films

Haoyu Lu, Yu Li, Jiyuan Han, Geng Huangfu, Guan Feng, Shuaishuai Yin, Yingfen Wei, Hao Jiang, Changlin Zheng, Qi Liu and Ming Liu

Adv Funct Materials, 2025, 35
DOI: 10.1002/adfm.202414187

Mechanisms for enhanced ferroelectric properties in ultra-thin Hf0.5Zr0.5O2 film under low-temperature, long-term annealing

Lu Tai, Xiaopeng Li, Xiaoyu Dou, Pengpeng Sang, Xuepeng Zhan, Jixuan Wu and Jiezhi Chen

Applied Physics Letters, 2024, 125
DOI: 10.1063/5.0223115

HZO (>10 nm) Films for Achieving High-κ Near Morphotropic Phase Boundary at Low-Temperature Furnace Annealing Process

Yixin Qin, Venkateswarlu Gaddam, Taeseung Jung and Sanghun Jeon

IEEE Trans. Electron Devices, 2024, 71, 5618
DOI: 10.1109/TED.2024.3423804

First Demonstration of High-Temperature Reliability on La:HZO-La:In2O3 FeFET With High Endurance of 1010 at 125 °C

Min Zeng, Shiwei Yan, Shiyuan Liu, Tianyue Fu, Qianlan Hu and Yanqing Wu

IEEE Electron Device Lett., 2025, 46, 1632
DOI: 10.1109/LED.2025.3587573

High-Performance Self-Driven Solar-Blind Ultraviolet Photodetectors Based on HfZrO2/β-Ga2O3 Heterojunctions

Shuang Yan, Gaochen Yang, Huanfeng He, Qi Liu, Qingqi Peng, Jian Chen, Mingkai Li, Yinmei Lu and Yunbin He

ACS Appl. Mater. Interfaces, 2023, 15, 22263
DOI: 10.1021/acsami.3c02209

Ion Radiation Effects on the Stability of Hafnium Oxide-Based Ferroelectric Thin Films: Mechanisms and Regulation

Yujie Fan, Jiawei Liu, Jie Jiang and Li-Mei Jiang

IEEE Trans. Device Mater. Relib., 2025, 25, 314
DOI: 10.1109/TDMR.2025.3550950

The Investigation of Reduced Variation Effect in FinFETs With Ultrathin 3-nm Ferroelectric Hf₀.₅Zr₀.₅O₂

Fan Zhang, Zhaohao Zhang, Jiaxin Yao, Xiaohui Zhu, Yue Peng, Jiali Huo, Qingzhu Zhang, Gaobo Xu, Zhenhua Wu, Genquan Han, Yan Liu and Huaxiang Yin

IEEE Trans. Electron Devices, 2024, 71, 2876
DOI: 10.1109/TED.2024.3379160

Revival of Ferroelectric Memories Based on Emerging Fluorite‐Structured Ferroelectrics

Ju Yong Park, Duk‐Hyun Choe, Dong Hyun Lee, Geun Taek Yu, Kun Yang, Se Hyun Kim, Geun Hyeong Park, Seung‐Geol Nam, Hyun Jae Lee, Sanghyun Jo, Bong Jin Kuh, Daewon Ha, Yongsung Kim, Jinseong Heo and Min Hyuk Park

Advanced Materials, 2023, 35
DOI: 10.1002/adma.202204904

Ultrathin fluorite nanobilayer films with excellent ferroelectricity for high-density memory applications

Lei Liu, Chengfeng Jiang, Xi Yuan, Yan Zhang, Haiyan Chen and Dou Zhang

Journal of Materials Science & Technology, 2026, 241, 219
DOI: 10.1016/j.jmst.2025.02.097

Silicon Microring Resonator Integrated Hafnium Zirconium Oxide Ferrophotonic Non-Volatile Memory

Asela Perera, Tristan Quach, Jianhao Shen, Sheilah M. Njoka, Angelica Drees and Swapnajit Chakravarty

ACS Photonics, 2025, 12, 4524
DOI: 10.1021/acsphotonics.5c00930

Interfacial Layer Engineering in Sub-5-nm HZO: Enabling Low-Temperature Process, Low-Voltage Operation, and High Robustness

Eunseon Yu, Xiao Lyu, Mengwei Si, Peide D. Ye and Kaushik Roy

IEEE Trans. Electron Devices, 2023, 70, 2962
DOI: 10.1109/TED.2023.3270397

Roadmap on ferroelectric hafnia- and zirconia-based materials and devices

José P. B. Silva, Ruben Alcala, Uygar E. Avci, Nick Barrett, Laura Bégon-Lours, Mattias Borg, Seungyong Byun, Sou-Chi Chang, Sang-Wook Cheong, Duk-Hyun Choe, Jean Coignus, Veeresh Deshpande, Athanasios Dimoulas, Catherine Dubourdieu, Ignasi Fina, Hiroshi Funakubo, Laurent Grenouillet, Alexei Gruverman, Jinseong Heo, Michael Hoffmann, H. Alex Hsain, Fei-Ting Huang, Cheol Seong Hwang, Jorge Íñiguez, Jacob L. Jones, Ilya V. Karpov, Alfred Kersch, Taegyu Kwon, Suzanne Lancaster, Maximilian Lederer, Younghwan Lee, Patrick D. Lomenzo, Lane W. Martin, Simon Martin, Shinji Migita, Thomas Mikolajick, Beatriz Noheda, Min Hyuk Park, Karin M. Rabe, Sayeef Salahuddin, Florencio Sánchez, Konrad Seidel, Takao Shimizu, Takahisa Shiraishi, Stefan Slesazeck, Akira Toriumi, Hiroshi Uchida, Bertrand Vilquin, Xianghan Xu, Kun Hee Ye and Uwe Schroeder

APL Materials, 2023, 11
DOI: 10.1063/5.0148068

Unlocking the Potential of Hafnia Ferroelectrics: Achieving High Reliability via Plasma Frequency Modulation in Very High-Frequency Plasma-Enhanced Atomic Layer Deposition

Ketong Yang, Minhyun Jung, Taeseung Jung, Jae Seok Yoon, Junghyeon Hwang, Hunbeom Shin, Seungyeob Kim, Chaeheon Kim and Sanghun Jeon

ACS Appl. Electron. Mater., 2024, 6, 5067
DOI: 10.1021/acsaelm.4c00630

A perspective on the physical scaling down of hafnia-based ferroelectrics

Ju Yong Park, Dong Hyun Lee, Geun Hyeong Park, Jaewook Lee, Younghwan Lee and Min Hyuk Park

Nanotechnology, 2023, 34, 202001
DOI: 10.1088/1361-6528/acb945

Ferroelectric capacitors and field-effect transistors as in-memory computing elements for machine learning workloads

Eunseon Yu, Gaurav Kumar K, Utkarsh Saxena and Kaushik Roy

Sci Rep, 2024, 14
DOI: 10.1038/s41598-024-59298-8

Highly Reliable Hf1‐XZrXO2 with Ultra‐Low Operation Voltage (< 1 V) Enabled by Stoichiometric Control of Tungsten Oxide Interfacial Layer

Mostafa Habibi, Alireza Kashir, Tony Schenk, Hojung Jang, Seungyeol Oh, Jaeseon Kim, Geonhui Han, Donghwa Lee, Foroozan Koushan and Hyunsang Hwang

Adv Materials Technologies, 2025
DOI: 10.1002/admt.202500507

Impact of monolayer engineering on ferroelectricity of sub-5 nm Hf0.5Zr0.5O2 thin films

Ting-Yun Wang, Chi-Lin Mo, Chun-Yi Chou, Chun-Ho Chuang and Miin-Jang Chen

Acta Materialia, 2023, 250, 118848
DOI: 10.1016/j.actamat.2023.118848

Internal Harmonic Displacement Field: A Model Dynamic for Hole-Electron Coupled Hysteresis Switching in Hf0.5Zr0.5O2

Yue-Min Wan, Han Loong Lee, Xin-Shen Lin, You-Jen Lee and Chun-Jung Su

Progress of Theoretical and Experimental Physics, 2025, 2025
DOI: 10.1093/ptep/ptaf077