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Journal of Alloys and Compounds, 2022, 928, 167129
DOI: 10.1016/j.jallcom.2022.167129

Growth of Single-Crystalline GaN Films on Ga-Free Langasite-Type Crystals by Metal–Organic Chemical Vapor Deposition

Shuai Wang, Jianxi Xu, Yuning Wang, Xujun Su, Yanqing Zheng, Ningzhong Bao and Ke Xu

Crystal Growth & Design, 2024, 24, 331
DOI: 10.1021/acs.cgd.3c01042

Crack-free > 1-μm AlN layer on Si substrate using ductile interlayer for strain modification in epitaxial film

Muhammad Aqib, Mina Moradnia, Mihee Ji, Vijay S. Parameshwaran, Wendy L. Sarney, Sara Pouladi, Nam-In Kim, Rheno Paul Rajesh Kumar, Gregory A. Garrett, Anand V. Sampath, Rebecca L. Forrest and Jae-Hyun Ryou

Applied Physics Letters, 2024, 125
DOI: 10.1063/5.0219833

Two-dimensional material templates for van der Waals epitaxy, remote epitaxy, and intercalation growth

Huije Ryu, Hyunik Park, Joung-Hun Kim, Fan Ren, Jihyun Kim, Gwan-Hyoung Lee and Stephen J. Pearton

Applied Physics Reviews, 2022, 9
DOI: 10.1063/5.0090373

Centimeter-Transferable III-Nitride Membrane Enabled by Interfacial Adhesion Control for a Flexible Photosensitive Device

Yang Chen, Zhiming Shi, Shanli Zhang, Yuanyuan Yue, Hang Zang, Jianwei Ben, Ke Jiang, Yuping Jia, Xiaojuan Sun and Dabing Li

ACS Appl. Mater. Interfaces, 2023, 15, 31954
DOI: 10.1021/acsami.3c04213

The effect of vacancy defects on the interfacial thermal resistance at the GaN/diamond interfaces: molecular dynamics simulation

Xuejiao Zhang, Yutong Li, Jinxi Liu, Cun Zhang and Lixiang Zhang

Modelling Simul. Mater. Sci. Eng., 2025, 33, 045008
DOI: 10.1088/1361-651X/adcfb7

Polarization‐Driven‐Orientation Selective Growth of Single‐Crystalline III‐Nitride Semiconductors on Arbitrary Substrates

Danshuo Liu, Lin Hu, Xuelin Yang, Zhihong Zhang, Haodong Yu, Fawei Zheng, Yuxia Feng, Jiaqi Wei, Zidong Cai, Zhenghao Chen, Cheng Ma, Fujun Xu, Xinqiang Wang, Weikun Ge, Kaihui Liu, Bing Huang and Bo Shen

Adv Funct Materials, 2022, 32
DOI: 10.1002/adfm.202113211

Epitaxy of single-crystalline GaN films on novel Ca3Ta(Ga0.5Al0.5)3Si2O14 substrates by metal-organic chemical vapor deposition

Shuai Wang, Kainan Xiong, Sheng Wang, Yanqing Zheng, Xiaoniu Tu, Cheng Ji, Ningzhong Bao and Honglang Li

Vacuum, 2023, 207, 111600
DOI: 10.1016/j.vacuum.2022.111600