Advances in the design of bio-organic resistive switching memory

Muhammad Awais, Yi Sheng Wong, Feng Zhao and Kuan Yew Cheong

J. Mater. Chem. C, 2026
DOI: 10.1039/D6TC00622A

Phototunable memories and reconfigurable logic applications based on natural melanin

Meng Chen, Ziyu Lv, Fangsheng Qian, Yan Wang, Xuechao Xing, Kui Zhou, Junjie Wang, Shenming Huang, Su-Ting Han and Ye Zhou

J. Mater. Chem. C, 2021, 9, 3569
DOI: 10.1039/D1TC00052G

A sustainable resistive switching memory device based on organic keratin extracted from hair

Bolin Guo, Bai Sun, Wentao Hou, Yuanzheng Chen, Shouhui Zhu, Suangsuo Mao, Liang Zheng, Ming Lei, Bing Li and Guoqiang Fu

RSC Adv., 2019, 9, 12436
DOI: 10.1039/C8RA10643F

A two-dimensional hexagonal boron nitride/polymer nanocomposite for flexible resistive switching devices

Ghayas Uddin Siddiqui, Muhammad Muqeet Rehman, Young-Jin Yang and Kyung Hyun Choi

J. Mater. Chem. C, 2017, 5, 862
DOI: 10.1039/C6TC04345C

Resistive switching behaviors and memory logic functions in single MnOx nanorod modulated by moisture

Guangdong Zhou, Bai Sun, Zhijun Ren, Lidan Wang, Cunyun Xu, Bo Wu, Ping Li, Yanqing Yao and Shukai Duan

Chem. Commun., 2019, 55, 9915
DOI: 10.1039/C9CC04069B

Applications of biomemristors in next generation wearable electronics

Shuangsuo Mao, Bai Sun, Guangdong Zhou, Tao Guo, Jiangqiu Wang and Yong Zhao

Nanoscale Horiz., 2022, 7, 822
DOI: 10.1039/D2NH00163B

Quantum dot-based memristors for information processing and artificial intelligence applications

Dingshu Tian, Chuan Ke, Bai Sun, Haotian Liang, Ziran Qian, Qifan Wen, Xueqi Chen, Chuan Yang, Min Xu and Yong Zhao

Nanoscale, 2025, 17, 10485
DOI: 10.1039/D5NR00136F

Artificial and wearable albumen protein memristor arrays with integrated memory logic gate functionality

Guangdong Zhou, Zhijun Ren, Lidan Wang, Bai Sun, Shukai Duan and Qunliang Song

Mater. Horiz., 2019, 6, 1877
DOI: 10.1039/C9MH00468H

High speed and multi-level resistive switching capability of Ta2O5 thin films for nonvolatile memory application

Wei Hu, Lilan Zou, Chao Gao, Yongcai Guo and Dinghua Bao

Journal of Alloys and Compounds, 2016, 676, 356
DOI: 10.1016/j.jallcom.2016.03.211

Multistate resistive switching behaviors for neuromorphic computing in memristor

B. Sun, S. Ranjan, G. Zhou, T. Guo, Y. Xia, L. Wei, Y.N. Zhou and Y.A. Wu

Materials Today Advances, 2021, 9, 100125
DOI: 10.1016/j.mtadv.2020.100125

Write-Once-Read-Many-Times Characteristic of InZnO Oxide Semiconductor

Chih-Chieh Hsu, Che-Chang Tsao and Yu-Sheng Lin

IEEE Trans. Electron Devices, 2018, 65, 978
DOI: 10.1109/TED.2018.2798710

Filamentary Conduction in Aloe Vera Film for Memory Application

Zhe Xi Lim, Sasidharan Sreenivasan, Yew Hoong Wong, Feng Zhao and Kuan Yew Cheong

Procedia Engineering, 2017, 184, 655
DOI: 10.1016/j.proeng.2017.04.133

Ionotronic Neuromorphic Devices for Bionic Neural Network Applications

Fei Yu and Li Qiang Zhu

Physica Rapid Research Ltrs, 2019, 13
DOI: 10.1002/pssr.201800674

The observation of resistive switching characteristics using transparent and biocompatible Cu2+-doped salmon DNA composite thin film

Yawar Abbas, Sreekantha Reddy Dugasani, Muhammad Tayyab Raza, Yu-Rim Jeon, Sung Ha Park and Changhwan Choi

Nanotechnology, 2019, 30, 335203
DOI: 10.1088/1361-6528/ab1cfd

Defect dynamics in the resistive switching characteristics of Y0.95Sr0.05MnO3 films induced by electronic excitations

Keval Gadani, K.N. Rathod, Davit Dhruv, Hetal Boricha, Khushal Sagapariya, A.D. Joshi, D.D. Pandya, K. Asokan, P.S. Solanki and N.A. Shah

Journal of Alloys and Compounds, 2019, 788, 819
DOI: 10.1016/j.jallcom.2019.02.221

Interaction of a Phospholipid and a Coagulating Protein: Potential Candidate for Bioelectronic Applications

Ripa Paul, Hritinava Banik, Meshal Alzaid, Debajyoti Bhattacharjee and Syed Arshad Hussain

ACS Omega, 2022, 7, 17583
DOI: 10.1021/acsomega.1c07395

Promising Materials and Synthesis Methods for Resistive Switching Memory Devices: A Status Review

Girish U. Kamble, Akhilesh P. Patil, Rajanish K. Kamat, Jin Hyeok Kim and Tukaram D. Dongale

ACS Appl. Electron. Mater., 2023, 5, 2454
DOI: 10.1021/acsaelm.3c00062

Highly flexible and electroforming free resistive switching behavior of tungsten disulfide flakes fabricated through advanced printing technology

Muhammad Muqeet Rehman, Ghayas Uddin Siddiqui, Yang Hoi Doh and Kyung Hyun Choi

Semicond. Sci. Technol., 2017, 32, 095001
DOI: 10.1088/1361-6641/aa77db

Rectifying resistance switching behaviors of SnO2 microsphere films modulated by top electrodes

Rongchun Yuan, Weiwei Xia, Mengxue Xu, Zhilei Miao, Shudong Wu, Xiuyun Zhang, Junhui He and Qiang Wang

Current Applied Physics, 2020, 20, 431
DOI: 10.1016/j.cap.2020.01.005

Cellulose Nanocrystal Based Bio‐Memristor as a Green Artificial Synaptic Device for Neuromorphic Computing Applications

Tassawar Hussain, Haider Abbas, Chulmin Youn, Hojin Lee, Turgun Boynazarov, Boncheol Ku, Yu‐Rim Jeon, Hoonhee Han, Jong Hyeon Lee, Changhwan Choi and Taekjib Choi

Adv Materials Technologies, 2022, 7
DOI: 10.1002/admt.202100744

Tunneling of photon-generated carrier in the interface barrier induced resistive switching memory behaviour

Bai Sun, Tao Guo, Guangdong Zhou, Shubham Ranjan, Wentao Hou, Yunming Hou and Yong Zhao

Journal of Colloid and Interface Science, 2019, 553, 682
DOI: 10.1016/j.jcis.2019.06.076

Current-voltage hysteresis of the composite MoS2-MoO≤3 nanobelts for data storage

Guangdong Zhou, Wenxi Zhao, Xiaoqing Ma and A.K. Zhou

Journal of Alloys and Compounds, 2016, 679, 47
DOI: 10.1016/j.jallcom.2016.03.258

Ion reaction tunable ON/OFF ratio of vertically oriented Zn-Al layered-double-hydroxide nanosheets based memristor

Feng Yang, Mayameen S. Kadhim, Mashair Babiker, Hosameldeen Elshekh, Wentao Hou, Guoqiang Huang, Yong Zhang, Yong Zhao and Bai Sun

Materials Today Communications, 2019, 20, 100573
DOI: 10.1016/j.mtcomm.2019.100573

Bionanohybrid composed of metalloprotein/DNA/MoS2/peptides to control the intracellular redox states of living cells and its applicability as a cell-based biomemory device

Jinho Yoon, Minkyu Shin, Dongyeon Kim, Joungpyo Lim, Hyun-Woong Kim, Taewook Kang and Jeong-Woo Choi

Biosensors and Bioelectronics, 2022, 196, 113725
DOI: 10.1016/j.bios.2021.113725

Nonvolatile bio-memristor fabricated with natural bio-materials from spider silk

Bai Sun, Dandan Liang, Xiaoping Li and Peng Chen

J Mater Sci: Mater Electron, 2016, 27, 3957
DOI: 10.1007/s10854-015-4248-9

Recent Progress of Protein‐Based Data Storage and Neuromorphic Devices

Junjie Wang, Fangsheng Qian, Shenming Huang, Ziyu Lv, Yan Wang, Xuechao Xing, Meng Chen, Su-Ting Han and Ye Zhou

Advanced Intelligent Systems, 2021, 3
DOI: 10.1002/aisy.202000180

Memristors with Biomaterials for Biorealistic Neuromorphic Applications

Jiaqi Xu, Xiaoning Zhao, Xiaoli Zhao, Zhongqiang Wang, Qingxin Tang, Haiyang Xu and Yichun Liu

Small Science, 2022, 2
DOI: 10.1002/smsc.202200028

Phototunable Biomemory Based on Light‐Mediated Charge Trap

Ziyu Lv, Yan Wang, Zhonghui Chen, Long Sun, Junjie Wang, Meng Chen, Zhenting Xu, Qiufan Liao, Li Zhou, Xiaoli Chen, Jieni Li, Kui Zhou, Ye Zhou, Yu‐Jia Zeng, Su‐Ting Han and Vellaisamy A. L. Roy

Advanced Science, 2018, 5
DOI: 10.1002/advs.201800714

Coexistence of Write Once Read Many Memory and Memristor in blend of Poly(3,4-ethylenedioxythiophene): polystyrene sulfonate and Polyvinyl Alcohol

Viet Cuong Nguyen and Pooi See Lee

Sci Rep, 2016, 6
DOI: 10.1038/srep38816

Origin of a continuously enlarge memristor effect in Nb inserted into MgB 2 multilayer constructed heterojunctions

Shouhui Zhu, Xuejiao Zhang, Bai Sun, Shuangsuo Mao, Pingping Zheng, Yong Zhao and Yudong Xia

Vacuum, 2018, 151, 261
DOI: 10.1016/j.vacuum.2018.02.038

A flexible nonvolatile resistive switching memory device based on ZnO film fabricated on a foldable PET substrate

Bai Sun, Xuejiao Zhang, Guangdong Zhou, Tian Yu, Shuangsuo Mao, Shouhui Zhu, Yong Zhao and Yudong Xia

Journal of Colloid and Interface Science, 2018, 520, 19
DOI: 10.1016/j.jcis.2018.03.001

A Bio-memristor with Overwhelming Capacitance Effect

Shuangsuo Mao, Xuejiao Zhang, Bai Sun, Bing Li, Tian Yu, Yuanzheng Chen and Yong Zhao

Electron. Mater. Lett., 2019, 15, 547
DOI: 10.1007/s13391-019-00150-x

Non-zero-crossing current-voltage hysteresis behavior induced by capacitive effects in bio-memristor

Shouhui Zhu, Guangdong Zhou, Weiyong Yuan, Shuangsuo Mao, Feng Yang, Guoqiang Fu and Bai Sun

Journal of Colloid and Interface Science, 2020, 560, 565
DOI: 10.1016/j.jcis.2019.10.087

From biomaterial-based data storage to bio-inspired artificial synapse

Ziyu Lv, Ye Zhou, Su-Ting Han and V.A.L. Roy

Materials Today, 2018, 21, 537
DOI: 10.1016/j.mattod.2017.12.001

Direct Observation of Structural Deformation Immunity for Understanding Oxygen Plasma Treatment-Enhanced Resistive Switching in HfOx-Based Memristive Devices

Dong Wang, Shaoan Yan, Qilai Chen, Qiming He, Yongguang Xiao, Minghua Tang and Xuejun Zheng

Nanomaterials, 2019, 9, 1355
DOI: 10.3390/nano9101355

A write-once-read-many-times memory based on a sol-gel derived copper oxide semiconductor

Chih-Chieh Hsu, Jung-En Tsai and Yu-Sheng Lin

Physica B: Condensed Matter, 2019, 562, 20
DOI: 10.1016/j.physb.2019.03.007

Electrochemical synthesis and functional analysis of self-assembled Au-decorated polypyrrole for non-volatile memory and bio-inspired computing

Rutuja K. Bhosale, Somnath S. Kundale, Anjali R. Shelake, Harshada L. Lokhande, Kasturi A. Rokade, Akash N. Kurade, Deepali S. Shivade, Krantiveer V. More, Santosh S. Sutar, Rajanish K. Kamat and Tukaram D. Dongale

Organic Electronics, 2024, 127, 107013
DOI: 10.1016/j.orgel.2024.107013

Ag filament induced nonvolatile resistive switching memory behaviour in hexagonal MoSe2 nanosheets

Pengde Han, Bai Sun, Jia Li, Tianjing Li, Qingle Shi, Baoxiang Jiao, Qisheng Wu and Xuejiao Zhang

Journal of Colloid and Interface Science, 2017, 505, 148
DOI: 10.1016/j.jcis.2017.05.082

Environmentally Friendly Resistive Switching Memory Devices with DNA as the Active Layer and Bio-Based Polyethylene Furanoate as the Substrate

Jeun-Yan Lam, Guang-Way Jang, Cheng-Jyun Huang, Shih-Huang Tung and Wen-Chang Chen

ACS Sustainable Chem. Eng., 2020, 8, 5100
DOI: 10.1021/acssuschemeng.9b07168

Resistive switching behaviour of novel GdMnO3-based heterostructures

Pankaj Solanki, Mayur Vala, Dhananjay Dhruv, Sandip V. Bhatt and Bharat Kataria

Surfaces and Interfaces, 2022, 35, 102474
DOI: 10.1016/j.surfin.2022.102474

Preparation of MoSe2 nano-islands array embedded in a TiO2 matrix for photo-regulated resistive switching memory

Pengde Han, Bai Sun, Sen Cheng, Fangli Yu, Baoxiang Jiao and Qisheng Wu

Journal of Alloys and Compounds, 2016, 664, 619
DOI: 10.1016/j.jallcom.2015.12.238

Building memory devices from biocomposite electronic materials

Xuechao Xing, Meng Chen, Yue Gong, Ziyu Lv, Su-Ting Han and Ye Zhou

Science and Technology of Advanced Materials, 2020, 21, 100
DOI: 10.1080/14686996.2020.1725395

Noncytotoxic WORM Memory Using Lysozyme with Ultrahigh Stability for Transient and Sustainable Electronics Applications

Hritinava Banik, Surajit Sarkar, Debajyoti Bhattacharjee, Akshit Malhotra, Ashwini Chauhan and Syed Arshad Hussain

ACS Omega, 2024, 9, 618
DOI: 10.1021/acsomega.3c06229

Poly-4-vinylphenol (PVP) and Poly(melamine-co-formaldehyde) (PMF)-Based Atomic Switching Device and Its Application to Logic Gate Circuits with Low Operating Voltage

Dong-Ho Kang, Woo-Young Choi, Hyunsuk Woo, Sungkyu Jang, Hyung-Youl Park, Jaewoo Shim, Jae-Woong Choi, Sungho Kim, Sanghun Jeon, Sungjoo Lee and Jin-Hong Park

ACS Appl. Mater. Interfaces, 2017, 9, 27073
DOI: 10.1021/acsami.7b07549

A persistently increasing resistance ratio and repeatable non-volatile memory in AZO/CZTSe/FTO resistive switching devices

Pingping Zheng, Xuejiao Zhang, Bai Sun, Shuangsuo Mao, Shouhui Zhu, Yudong Xia, Yong Zhao and Zhou Yu

Funct. Mater. Lett., 2018, 11, 1850023
DOI: 10.1142/S1793604718500236

From Memristive Materials to Neural Networks

Tao Guo, Bai Sun, Shubham Ranjan, Yixuan Jiao, Lan Wei, Y. Norman Zhou and Yimin A. Wu

ACS Appl. Mater. Interfaces, 2020, 12, 54243
DOI: 10.1021/acsami.0c10796

Resistive switching of two-dimensional NiAl-layered double hydroxides and memory logical functions

Yanmei Sun, Qi Yuan, Yan Dong, Yufei Wang, Nian He and Dianzhong Wen

Journal of Alloys and Compounds, 2023, 933, 167745
DOI: 10.1016/j.jallcom.2022.167745

Metal ion formed conductive filaments by redox process induced nonvolatile resistive switching memories in MoS 2 film

Yudong Xia, Bai Sun, Hongyan Wang, Guangdong Zhou, Xiang Kan, Yong Zhang and Yong Zhao

Applied Surface Science, 2017, 426, 812
DOI: 10.1016/j.apsusc.2017.07.257

Ternary Resistive Switching Memory Behavior in Graphene Oxide Layer

Junguo Lu, Yanmei Sun and Dianzhong Wen

NANO, 2018, 13, 1850072
DOI: 10.1142/S1793292018500728

Enlarged memory margins for resistive switching devices based on polyurethane film due to embedded Ag nanoparticles

Lu Liu, Kailei Lu, Dong Yan, Jiazhen Zhang, Chi Ma, Zhengqiang Jia, Wen Wang and Enming Zhao

Solid-State Electronics, 2018, 147, 6
DOI: 10.1016/j.sse.2018.06.003

Organo‐Solubility Carbazole‐Containing Polyimides with Tunable Memory Characteristics Based on Different Dianhydride Moieties

Yanhua Yang, Pan Jin, Shijin Ding, Yueying Chu and Yingzhong Shen

Macro Chemistry & Physics, 2018, 219
DOI: 10.1002/macp.201800195

Self-Powered Memory Systems

Bai Sun, Guangdong Zhou, Ke Xu, Qiang Yu and Shukai Duan

ACS Materials Lett., 2020, 2, 1669
DOI: 10.1021/acsmaterialslett.0c00364

Temperature-dependent resistive switching for gold/poly(methyl methacrylate)/heavily doped p-type Si/indium devices by incorporating black phosphorus into poly(methyl methacrylate)

Ting-Hong Su, Ming-Yang Chen, Wei-Shiuan Huang and Yow-Jon Lin

Indian J Phys, 2021, 95, 1351
DOI: 10.1007/s12648-020-01818-z

Multistage Resistive Switching Processes in Filament Conduction-Based Organic Memory Devices

Yanmei Sun, Dianzhong Wen and Fengyun Sun

J. Electrochem. Soc., 2020, 167, 027529
DOI: 10.1149/1945-7111/ab6b0a

Transient WORM Memory Device Using Biocompatible Protamine Sulfate with Very High Data Retention and Stability

Hritinava Banik, Surajit Sarkar, Debajyoti Bhattacharjee and Syed Arshad Hussain

ACS Appl. Electron. Mater., 2021, 3, 5248
DOI: 10.1021/acsaelm.1c00750

Tuning DNA electrical conductivity by silver photo-doping

B K Murgunde and M K Rabinal

Biomed. Phys. Eng. Express, 2020, 6, 015017
DOI: 10.1088/2057-1976/ab5c04

An optoelectronic resistive switching memory behavior of Ag/α-SnWO4/FTO device

Pengde Han, Bai Sun, Sen Cheng, Fangli Yu, Baoxiang Jiao and Qisheng Wu

Journal of Alloys and Compounds, 2016, 681, 516
DOI: 10.1016/j.jallcom.2016.04.268

Advances in Emerging Photonic Memristive and Memristive‐Like Devices

Wenxiao Wang, Song Gao, Yaqi Wang, Yang Li, Wenjing Yue, Hongsen Niu, Feifei Yin, Yunjian Guo and Guozhen Shen

Advanced Science, 2022, 9
DOI: 10.1002/advs.202105577

A larger nonvolatile bipolar resistive switching memory behaviour fabricated using eggshells

Guangdong Zhou, Bai Sun, Ankun Zhou, Bo Wu and Haishen Huang

Current Applied Physics, 2017, 17, 235
DOI: 10.1016/j.cap.2016.09.018

Bio-inspired artificial synapses: Neuromorphic computing chip engineering with soft biomaterials

Tanvir Ahmed

Memories - Materials, Devices, Circuits and Systems, 2023, 6, 100088
DOI: 10.1016/j.memori.2023.100088

Biomemristors as the next generation bioelectronics

Bai Sun, Guangdong Zhou, Tao Guo, Y. Norman Zhou and Yimin A. Wu

Nano Energy, 2020, 75, 104938
DOI: 10.1016/j.nanoen.2020.104938

Biomaterial-Based Nonvolatile Resistive Memory Devices toward Ecofriendliness and Biocompatibility

Muhammad Muqeet Rehman, Hafiz Mohammad Mutee ur Rehman, Woo Young Kim, Syed Sibtul Hassan Sherazi, Muhammad Wajdan Rao, Maryam Khan and Zubair Muhammad

ACS Appl. Electron. Mater., 2021, 3, 2832
DOI: 10.1021/acsaelm.1c00078

From natural biomaterials to environment-friendly and sustainable nonvolatile memory device

Xiaojun Wang, Shu Tian, Bai Sun, Xiaoxia Li, Bolin Guo, Yushuang Zeng, Bing Li and Weiting Luo

Chemical Physics, 2018, 513, 7
DOI: 10.1016/j.chemphys.2018.06.013

Switching Characteristics and Mechanism Using Al2O3 Interfacial Layer in Al/Cu/GdOx/Al2O3/TiN Memristor

Chiao-Fan Chiu, Sreekanth Ginnaram, Asim Senapati, Yi-Pin Chen and Siddheswar Maikap

Electronics, 2020, 9, 1466
DOI: 10.3390/electronics9091466

Investigation of a submerging redox behavior in Fe2O3 solid electrolyte for resistive switching memory

Guangdong Zhou, Xiude Yang, Lihua Xiao, Bai Sun and Ankun Zhou

Applied Physics Letters, 2019, 114
DOI: 10.1063/1.5089147

Effects of Spent Coffee Grounds on Improvement of Resistive Switching Characteristics in Natural Rubber‐Based Memory

Muhammad Awais, Nadras Othman, Mohamad Danial Shafiq, Feng Zhao and Kuan Yew Cheong

Small, 2025, 21
DOI: 10.1002/smll.202504260

Improved Uniformity of TaOx-Based Resistive Random Access Memory with Ultralow Operating Voltage by Electrodes Engineering

Chuang Li, Fang Wang, Jingwei Zhang, Yu She, Zhenzhong Zhang, Lifeng Liu, Qi Liu, Yaowu Hao and Kailiang Zhang

ECS J. Solid State Sci. Technol., 2020, 9, 041005
DOI: 10.1149/2162-8777/ab85be

Electronic Devices for Human‐Machine Interfaces

Hong Wang, Xiaohua Ma and Yue Hao

Adv Materials Inter, 2017, 4
DOI: 10.1002/admi.201600709

Multistage resistive switching behavior organic coating films-based of memory devices

Yanmei Sun and Dianzhong Wen

Progress in Organic Coatings, 2020, 142, 105613
DOI: 10.1016/j.porgcoat.2020.105613

Review of Electrochemically Synthesized Resistive Switching Devices: Memory Storage, Neuromorphic Computing, and Sensing Applications

Somnath S. Kundale, Girish U. Kamble, Pradnya P. Patil, Snehal L. Patil, Kasturi A. Rokade, Atul C. Khot, Kiran A. Nirmal, Rajanish K. Kamat, Kyeong Heon Kim, Ho-Myoung An, Tukaram D. Dongale and Tae Geun Kim

Nanomaterials, 2023, 13, 1879
DOI: 10.3390/nano13121879

Hydrogel‐Based Artificial Synapses for Sustainable Neuromorphic Electronics

Jiongyi Yan, James P. K. Armstrong, Fabrizio Scarpa and Adam W. Perriman

Advanced Materials, 2024, 36
DOI: 10.1002/adma.202403937

Resistive switching biodevice composed of MoS2-DNA heterolayer on the gold electrode

Jinho Yoon, Mohsen Mohammadniaei, Hye Kyu Choi, Minkyu Shin, Bharate Bapurao G., Taek Lee and Jeong-Woo Choi

Applied Surface Science, 2019, 478, 134
DOI: 10.1016/j.apsusc.2019.01.229

Electron Irradiation Induces the Conversion from 2H-WSe2 to 1T-WSe2 and Promotes the Performance of Electrocatalytic Hydrogen Evolution

Xiaoqing Yue, Jianqun Yang, Weiqi Li, Yuhang Jing, Lei Dong, Yubao Zhang and Xingji Li

ACS Sustainable Chem. Eng., 2022, 10, 2420
DOI: 10.1021/acssuschemeng.1c07179

Review on resistive switching mechanisms of bio-organic thin film for non-volatile memory application

Kuan Yew Cheong, Ilias Ait Tayeb, Feng Zhao and Jafri Malin Abdullah

Nanotechnology Reviews, 2021, 10, 680
DOI: 10.1515/ntrev-2021-0047

From dead leaves to sustainable organic resistive switching memory

Bai Sun, Shouhui Zhu, Shuangsuo Mao, Pingping Zheng, Yudong Xia, Feng Yang, Ming Lei and Yong Zhao

Journal of Colloid and Interface Science, 2018, 513, 774
DOI: 10.1016/j.jcis.2017.12.007

Harnessing Recombinant DnaJ Protein as Reversible Metal Chelator for a High-Performance Resistive Switching Device

Sung Kyu Jang, Sookyung Kim, Muhammad Saad Salman, Ji-ryang Jang, Yu Mi Um, Lihan Tan, Jin-Hong Park, Woo-Seok Choe and Sungjoo Lee

Chem. Mater., 2018, 30, 781
DOI: 10.1021/acs.chemmater.7b04261

Effects of Al dopants and interfacial layer on resistive switching behaviors of HfOx film

Tingting Guo, Tingting Tan, Zhengtang Liu and Bangjie Liu

Journal of Alloys and Compounds, 2017, 708, 23
DOI: 10.1016/j.jallcom.2017.02.286

A resistance ratio change phenomenon observed in Al doped ZnO (AZO)/Cu(In 1-x Ga x )Se 2 /Mo resistive switching memory device

Tao Guo, Bai Sun, Shuangsuo Mao, Shouhui Zhu, Yudong Xia, Hongyan Wang, Yong Zhao and Zhou Yu

Applied Surface Science, 2018, 433, 535
DOI: 10.1016/j.apsusc.2017.10.073

Conductance Quantization in Nonvolatile Resistive Switching Memory Based on the Polymer Composite of Zinc Oxide Nanoparticles

Yanmei Sun and Dianzhong Wen

J. Phys. Chem. C, 2018, 122, 10582
DOI: 10.1021/acs.jpcc.8b01120

Effect of Cu ions assisted conductive filament on resistive switching memory behaviors in ZnFe2O4-based devices

Bai Sun, Xin Zhang, Guangdong Zhou, Chunming Zhang, Pingyuan Li, Yudong Xia and Yong Zhao

Journal of Alloys and Compounds, 2017, 694, 464
DOI: 10.1016/j.jallcom.2016.10.008

Quantum conductance and magnetic properties in ZnO based resistive switching memory

Shuxia Ren, Jiajun Guo, Li Zhang, Xu Zhao and Wei Chen

Journal of Alloys and Compounds, 2016, 689, 800
DOI: 10.1016/j.jallcom.2016.08.032