Manipulating resistive states in oxide based resistive memories through defective layers design

Zhemi Xu, Peiyuan Guan, Adnan Younis, Dewei Chu and Sean Li

RSC Adv., 2017, 7, 56390
DOI: 10.1039/C7RA11681K

Effect of Mn doping on electroforming and threshold voltages of bipolar resistive switching in Al/Mn : NiO/ITO

Ni-Na Ge, Chuan-Hui Gong, Xin-Cai Yuan, Hui-Zhong Zeng and Xian-Hua Wei

RSC Adv., 2018, 8, 29499
DOI: 10.1039/C8RA04784G

Bifunctional resistive switching behavior in an organolead halide perovskite based Ag/CH3NH3PbI3−xClx/FTO structure

Eunji Yoo, Miaoqiang Lyu, Jung-Ho Yun, Chijung Kang, Youngjin Choi and Lianzhou Wang

J. Mater. Chem. C, 2016, 4, 7824
DOI: 10.1039/C6TC02503J

Enhanced resistive switching effect upon illumination in self-assembled NiWO4nano-nests

Bai Sun, Wenxi Zhao, Lujun Wei, Hongwei Li and Peng Chen

Chem. Commun., 2014, 50, 13142
DOI: 10.1039/C4CC05784H

Retracted Article: Light-controlled resistive switching memory of multiferroic BiMnO3 nanowire arrays

Bai Sun and Chang Ming Li

Phys. Chem. Chem. Phys., 2015, 17, 6718
DOI: 10.1039/C4CP04901B

Amorphous ZnO based resistive random access memory

Yong Huang, Zihan Shen, Ye Wu, Xiaoqiu Wang, Shufang Zhang, Xiaoqin Shi and Haibo Zeng

RSC Adv., 2016, 6, 17867
DOI: 10.1039/C5RA22728C

Tetraphenylethene Carbothioamide‐Based Organic Stimuli‐Responsive Mechanochromic Memristive Devices with Non‐Volatile Memory and Synaptic Learning Functionalities

Kishor S. Jagadhane, Tukaram D. Dongale, Ankita S. Nikam, Neha B. Tadavalekar, Rajanish K. Kamat, Govind B. Kolekar and Prashant V. Anbhule

ChemistrySelect, 2023, 8
DOI: 10.1002/slct.202300026

Binary metal oxide-based resistive switching memory devices: A status review

Amitkumar R. Patil, Tukaram D. Dongale, Rajanish K. Kamat and Keshav Y. Rajpure

Materials Today Communications, 2023, 34, 105356
DOI: 10.1016/j.mtcomm.2023.105356

Investigation of analog memristive switching of iron oxide nanoparticle assembly between Pt electrodes

Jae-Deuk Kim, Yoon-Jae Baek, Young Jin Choi, Chi Jung Kang, Hyun Ho Lee, Hyun-Mi Kim, Ki-Bum Kim and Tae-Sik Yoon

Journal of Applied Physics, 2013, 114
DOI: 10.1063/1.4846759

Superior resistive switching behaviors of FeWO4 single-crystalline nanowires array

Bai Sun and Chang Ming Li

Chemical Physics Letters, 2014, 604, 127
DOI: 10.1016/j.cplett.2014.04.054

Resistive switching of in situ polymerized polystyrene matrix copolymerized with alkanedienyl passivated Si nanoparticles

Minkeun Kim, Hunsang Jung, Yo-Han Kim, Chi-Jung Kang, Tae-Sik Yoon and Hyun Ho Lee

Microelectronic Engineering, 2015, 136, 26
DOI: 10.1016/j.mee.2015.03.043

Analog Memristive Characteristics of Square Shaped Lanthanum Oxide Nanoplates Layered Device

Wonkyu Kang, Kyoungmin Woo, Hyon Na, Chi Kang, Tae-Sik Yoon, Kyung Kim and Hyun Lee

Nanomaterials, 2021, 11, 441
DOI: 10.3390/nano11020441

Robust electric-field tunable opto-electrical behavior in Pt-NiO-Pt planar structures

A. Rebello and A. O. Adeyeye

Sci Rep, 2016, 6
DOI: 10.1038/srep28007

Resistive switching memory behaviours of MoSe2 nano-islands array

Xuejiao Zhang, Haixia Qiao, Xiaofeng Nian, Yong Huang and Xiaofeng Pang

J Mater Sci: Mater Electron, 2016, 27, 7609
DOI: 10.1007/s10854-016-4744-6

Multistate resistive switching characteristics of ZnO nanoparticles embedded polyvinylphenol device

Jihee Jung, Dahye Kwon, Hunsang Jung, Kyungmin Lee, Tae-Sik Yoon, Chi Jung Kang and Hyun Ho Lee

Journal of Industrial and Engineering Chemistry, 2018, 64, 85
DOI: 10.1016/j.jiec.2018.02.026

Coexistence of analog and digital resistive switching in BiFeO3-based memristive devices

Tuo Shi, Rui Yang and Xin Guo

Solid State Ionics, 2016, 296, 114
DOI: 10.1016/j.ssi.2016.09.001

Temperature dependent conversion from digital to analog resistive switching behavior of rf sputtered TiO2−x thin-film-based metal–oxide–semiconductor devices

Dip Manna, Koushik Mondal, Prasanta Karmakar and Supratic Chakraborty

Physica B: Condensed Matter, 2025, 715, 417564
DOI: 10.1016/j.physb.2025.417564

Tuning the analog and digital resistive switching properties of TiO2 by nanocompositing Al-doped ZnO

Akhilesh P. Patil, Kiran A. Nirmal, Sawanta S. Mali, Chang Kook Hong, Tae Geun Kim, Pramod S. Patil and Tukaram D. Dongale

Materials Science in Semiconductor Processing, 2020, 115, 105110
DOI: 10.1016/j.mssp.2020.105110

Utilizing multiple state variables to improve the dynamic range of analog switching in a memristor

YeonJoo Jeong, Sungho Kim and Wei D. Lu

Applied Physics Letters, 2015, 107
DOI: 10.1063/1.4934818

Nanoionics‐Enabled Memristive Devices: Strategies and Materials for Neuromorphic Applications

Zhiyong Wang, Laiyuan Wang, Masaru Nagai, Linghai Xie, Mingdong Yi and Wei Huang

Adv Elect Materials, 2017, 3
DOI: 10.1002/aelm.201600510

Synaptic characteristics with strong analog potentiation, depression, and short-term to long-term memory transition in a Pt/CeO2/Pt crossbar array structure

Hyung Jun Kim, Daehoon Park, Paul Yang, Keonwon Beom, Min Ju Kim, Chansun Shin, Chi Jung Kang and Tae-Sik Yoon

Nanotechnology, 2018, 29, 265204
DOI: 10.1088/1361-6528/aabcf6

Analog Memristive Characteristics of Mesoporous Silica–Titania Nanocomposite Device Concurrent with Selection Diode Property

Hunsang Jung, Yo-Han Kim, Jaekwang Kim, Tae-Sik Yoon, Chi Jung Kang, Songhun Yoon and Hyun Ho Lee

ACS Appl. Mater. Interfaces, 2019, 11, 36807
DOI: 10.1021/acsami.9b09135

A Digital–Analog Integrated Memristor Based on a ZnO NPs/CuO NWs Heterostructure for Neuromorphic Computing

Yaqi Wang, Wenxiao Wang, Chunwei Zhang, Hao Kan, Wenjing Yue, Jinbo Pang, Song Gao and Yang Li

ACS Appl. Electron. Mater., 2022, 4, 3525
DOI: 10.1021/acsaelm.2c00495

Parasitic Effect Analysis in Memristor-Array-Based Neuromorphic Systems

YeonJoo Jeong, Mohammed A. Zidan and Wei D. Lu

IEEE Trans. Nanotechnology, 2018, 17, 184
DOI: 10.1109/TNANO.2017.2784364

Neuromorphic Systems: Devices, Architecture, and Algorithms

K. A. Fetisenkova and A. E. Rogozhin

Mikroèlektronika, 2023, 52, 404
DOI: 10.31857/S0544126923700461

Analog–Digital Hybrid Memristive Devices for Image Pattern Recognition with Tunable Learning Accuracy and Speed

Ya Lin, Cong Wang, Yanyun Ren, Zhongqiang Wang, Haiyang Xu, Xiaoning Zhao, Jiangang Ma and Yichun Liu

Small Methods, 2019, 3
DOI: 10.1002/smtd.201900160

Coexistence of multifunctional reversible switching in Ti-doped ZnO RRAM

Hao Wang, Jing Wang, Jiahao Xue, Dingming Yang, Yunyao Zhang, Xiaoyi Lei, Shulong Wang, Junfeng Yan and Wu Zhao

Chinese Journal of Physics, 2025, 96, 654
DOI: 10.1016/j.cjph.2025.05.040

Two-terminal artificial synapse with hybrid organic–inorganic perovskite (CH3NH3)PbI3 and low operating power energy (∼47 fJ/μm2)

Boncheol Ku, Bonkee Koo, Andrey Sergeevich Sokolov, Min Jae Ko and Changhwan Choi

Journal of Alloys and Compounds, 2020, 833, 155064
DOI: 10.1016/j.jallcom.2020.155064

Characteristics of Synaptic Function of Mesoporous Silica–Titania and Mesoporous Titania Lateral Electrode Devices

Dhanashri Vitthal Desai, Jongmin Yang and Hyun Ho Lee

Nanomaterials, 2023, 13, 1734
DOI: 10.3390/nano13111734

Pavlovian conditioning achieved via one-transistor/one-resistor memristive synapse

Yankun Cheng, Ya Lin, Tao Zeng, Xuanyu Shan, Zhongqiang Wang, Xiaoning Zhao, Daniele Ielmini, Haiyang Xu and Yichun Liu

Applied Physics Letters, 2022, 120
DOI: 10.1063/5.0086867

Large and robust resistive switching in co-sputtered Pt-(NiO-Al2O3)-Pt devices

A. Rebello and A. O. Adeyeye

Journal of Applied Physics, 2016, 119
DOI: 10.1063/1.4942667

Resistive switching memory characteristics of single MoSe2 nanorods

Yongming Yan, Bai Sun and Dejian Ma

Chemical Physics Letters, 2015, 638, 103
DOI: 10.1016/j.cplett.2015.08.035

Preparation of MoSe2 nano-islands array embedded in a TiO2 matrix for photo-regulated resistive switching memory

Pengde Han, Bai Sun, Sen Cheng, Fangli Yu, Baoxiang Jiao and Qisheng Wu

Journal of Alloys and Compounds, 2016, 664, 619
DOI: 10.1016/j.jallcom.2015.12.238

An optoelectronic resistive switching memory behavior of Ag/α-SnWO4/FTO device

Pengde Han, Bai Sun, Sen Cheng, Fangli Yu, Baoxiang Jiao and Qisheng Wu

Journal of Alloys and Compounds, 2016, 681, 516
DOI: 10.1016/j.jallcom.2016.04.268

Analog and digital resistive switching in W/TiO2/ITO devices: the impact of crystallinity and Indium diffusion

Bhagyalakshmi K and Biju Kuyyadi P

Phys. Scr., 2024, 99, 105977
DOI: 10.1088/1402-4896/ad76e7

Photo-electron double regulated resistive switching memory behaviors of Ag/CuWO4/FTO device

B. Sun, X.J. Jia, J.H. Wu and P. Chen

Solid State Communications, 2015, 223, 1
DOI: 10.1016/j.ssc.2015.08.028

Digital and analog resistive switching in Lu-doped piezoelectric BiFeO3 film

Himadri Nandan Mohanty, A.K. Jena, Syam Prasad P., Saroj Kumar Mishra, Ravi Gautam, D. Prabhu, Satyaprakash Sahoo and J. Mohanty

Materials Science and Engineering: B, 2023, 294, 116535
DOI: 10.1016/j.mseb.2023.116535

Conduction mechanism and synaptic behaviour of interfacial switching AlOσ-based RRAM

Sanghoon Cho, Jungmo Jung, Saeyoung Kim and James Jungho Pak

Semicond. Sci. Technol., 2020, 35, 085006
DOI: 10.1088/1361-6641/ab8d0e

Electrode-induced digital-to-analog resistive switching in TaOx-based RRAM devices

Xinyi Li, Huaqiang Wu, Bin Gao, Wei Wu, Dong Wu, Ning Deng, Jian Cai and He Qian

Nanotechnology, 2016, 27, 305201
DOI: 10.1088/0957-4484/27/30/305201

Digital and Analog Resistive Switching in Rare-Earth Doped Piezoelectric BiFeO3 Film

Himadri Nandan Mohanty, A. K. Jena, Syam Prasad P, Saroj Kumar Mishra, Ravi Gautam, D. Prabhu, Satyaprakash Sahoo and Jyoti Ranjan Mohanty

SSRN Journal, 2022
DOI: 10.2139/ssrn.4184176

Controlling the digital-to-analog switching in HfO2-based memristors via modulating the oxide thickness

Linlin Li, Zhijiang Ye, Meixia Wu, Lei Ma, Lin Li and Guanghui Rao

Journal of Alloys and Compounds, 2024, 1009, 176890
DOI: 10.1016/j.jallcom.2024.176890

Analog resistive switching behavior of Al/Nb2O5/Al device

H Mähne, H Wylezich, F Hanzig, S Slesazeck, D Rafaja and T Mikolajick

Semicond. Sci. Technol., 2014, 29, 104002
DOI: 10.1088/0268-1242/29/10/104002

NiO-based memristor with three resistive switching modes

Ya Li, Paiwen Fang, Xihua Fan and Yanli Pei

Semicond. Sci. Technol., 2020, 35, 055004
DOI: 10.1088/1361-6641/ab76b0

Forming-Free Multilevel Resistive Switching in a ZnO@β-SiC Composite for Neuromorphic Computing

Bisweswar Santra, Minh-Anh Luong, Bidya Mondal, Alain Claverie and Aloke Kanjilal

ACS Appl. Electron. Mater., 2024, 6, 8008
DOI: 10.1021/acsaelm.4c01331

Neuromorphic Systems: Devices, Architecture, and Algorithms

K. A. Fetisenkova and A. E. Rogozhin

Russ Microelectron, 2023, 52, 393
DOI: 10.1134/S1063739723700555

Defect driven analog to digital resistive switching transition of NiO memristor device

Sourav Bhakta and Pratap K Sahoo

Phys. Scr., 2025, 100, 0759a8
DOI: 10.1088/1402-4896/aded41

Ultralow Voltage Resistive Switching in Hafnium–Zirconium Oxide

M. Asif, Rajib K. Rakshit and Ashok Kumar

Advanced Physics Research, 2024, 3
DOI: 10.1002/apxr.202300123

Transformation of digital to analog switching in TaOx-based memristor device for neuromorphic applications

Aftab Saleem, Firman Mangasa Simanjuntak, Sridhar Chandrasekaran, Sailesh Rajasekaran, Tseung-Yuen Tseng and Themis Prodromakis

Applied Physics Letters, 2021, 118
DOI: 10.1063/5.0041808

Novel Solution‐Processed Fe2O3/WS2 Hybrid Nanocomposite Dynamic Memristor for Advanced Power Efficiency in Neuromorphic Computing

Faisal Ghafoor, Honggyun Kim, Bilal Ghafoor, Zaheer Ahmed, Muhammad Farooq Khan, Muhammad Rabeel, Muhammad Faheem Maqsood, Sobia Nasir, Wajid Zulfiqar, Ghulam Dastageer, Myoung‐Jae Lee and Deok‐kee Kim

Advanced Science, 2025, 12
DOI: 10.1002/advs.202408133

Evaluation of Cellulose–MXene Composite Hydrogel Based Bio-Resistive Random Access Memory Material as Mimics for Biological Synapses

Trishala R. Desai, Somnath S. Kundale, Tukaram D. Dongale and Chitra Gurnani

ACS Appl. Bio Mater., 2023, 6, 1763
DOI: 10.1021/acsabm.2c01073

Resistive switching characteristics of ZnO nanoparticles layer-by-layer assembly based on cortisol and its antibody immune binding

Hunsang Jung, Jihee Jung, Dahye Kwon, Kyungmin Lee, Pilwoo Lee, Wonkyu Kang, Tae-Sik Yoon, Chi Jung Kang and Hyun Ho Lee

Journal of Industrial and Engineering Chemistry, 2019, 78, 66
DOI: 10.1016/j.jiec.2019.06.028

Digital to analog resistive switching transition induced by graphene buffer layer in strontium titanate based devices

Tao Wan, Bo Qu, Haiwei Du, Xi Lin, Qianru Lin, Da-Wei Wang, Claudio Cazorla, Sean Li, Sidong Liu and Dewei Chu

Journal of Colloid and Interface Science, 2018, 512, 767
DOI: 10.1016/j.jcis.2017.10.113

Digital and Analog Resistive Switching Behavior in Si-NCs Embedded in a Si/SiO2 Multilayer Structure for Neuromorphic Systems

Alfredo Morales-Sánchez, Karla Esther González-Flores, Sergio Alfonso Pérez-García, Sergio González-Torres, Blas Garrido-Fernández, Luis Hernández-Martínez and Mario Moreno-Moreno

Nanomaterials, 2023, 13, 986
DOI: 10.3390/nano13060986

Structural engineering of tantalum oxide based memristor and its electrical switching responses using rapid thermal annealing

Yawar Abbas, Andrey Sergeevich Sokolov, Yu-Rim Jeon, Sohyeon Kim, Boncheol Ku and Changhwan Choi

Journal of Alloys and Compounds, 2018, 759, 44
DOI: 10.1016/j.jallcom.2018.05.106

Effect of visible-light illumination on resistive switching characteristics in Ag/Ce2W3O12/FTO devices

Bai Sun, Xiaoping Li, Dandan Liang and Peng Chen

Chemical Physics Letters, 2016, 643, 66
DOI: 10.1016/j.cplett.2015.11.022

Suboxide interface induced digital-to-analog switching transformation in all Ti-based memristor devices

Lung-Yu Chang, Firman Mangasa Simanjuntak, Chun-Ling Hsu, Sridhar Chandrasekaran and Tseung-Yuen Tseng

Applied Physics Letters, 2020, 117
DOI: 10.1063/5.0014829

Analog and digital Reset processes observed in Pt/CuO/Pt memristive devices

Fu-cheng Lv, Rui Yang and Xin Guo

Solid State Ionics, 2017, 303, 161
DOI: 10.1016/j.ssi.2017.01.030

Resistive Switching of Sub-10 nm TiO2 Nanoparticle Self-Assembled Monolayers

Dirk Schmidt, Nicolas Raab, Michael Noyong, Venugopal Santhanam, Regina Dittmann and Ulrich Simon

Nanomaterials, 2017, 7, 370
DOI: 10.3390/nano7110370

Facile synthesis of nickel cobaltite quasi-hexagonal nanosheets for multilevel resistive switching and synaptic learning applications

Tukaram D. Dongale, Atul C. Khot, Ashkan Vakilipour Takaloo and Tae Geun Kim

NPG Asia Mater, 2021, 13
DOI: 10.1038/s41427-021-00286-z