Multiprotocol-induced plasticity in artificial synapses

Vladimir Kornijcuk, Omid Kavehei, Hyungkwang Lim, Jun Yeong Seok, Seong Keun Kim, Inho Kim, Wook-Seong Lee, Byung Joon Choi and Doo Seok Jeong

Nanoscale, 2014, 6, 15151
DOI: 10.1039/C4NR03405H

Nanoscale resistive switching devices: mechanisms and modeling

Yuchao Yang and Wei Lu

Nanoscale, 2013, 5, 10076
DOI: 10.1039/c3nr03472k

A neuromorphic systems approach to in-memory computing with non-ideal memristive devices: from mitigation to exploitation

Melika Payvand, Manu V. Nair, Lorenz K. Müller and Giacomo Indiveri

Faraday Discuss., 2019, 213, 487
DOI: 10.1039/C8FD00114F

Granular memristors with tunable stochasticity

Uddipan Ghosh, Ankur Bhaumik, Navyashree Vasudeva and Anshu Pandey

Nanoscale, 2025, 17, 1238
DOI: 10.1039/D4NR02899F

Novel charm of 2D materials engineering in memristor: when electronics encounter layered morphology

Saima Batool, Muhammad Idrees, Shi-Rui Zhang, Su-Ting Han and Ye Zhou

Nanoscale Horiz., 2022, 7, 480
DOI: 10.1039/D2NH00031H

Device area invariant conductance linearity in scalable silver nanostructure based neuromorphic devices with threshold activation following nociceptive behavior

Mousona Pal, Bhupesh Yadav, Indrajit Mondal, Manpreet Kaur, N. S. Vidhyadhiraja and Giridhar U. Kulkarni

Nanoscale, 2025, 17, 19434
DOI: 10.1039/D5NR01617G

Structural transition pathway and bipolar switching of the GeTe–Sb2Te3 superlattice as interfacial phase-change memory

Nobuki Inoue and Hisao Nakamura

Faraday Discuss., 2019, 213, 303
DOI: 10.1039/C8FD00093J

Neuromorphic Computing with Memristor Crossbar

Xinjiang Zhang, Anping Huang, Qi Hu, Zhisong Xiao and Paul K. Chu

Physica Status Solidi (a), 2018, 215
DOI: 10.1002/pssa.201700875

Theory of Heterogeneous Circuits With Stochastic Memristive Devices

Valeriy A. Slipko and Yuriy V. Pershin

IEEE Trans. Circuits Syst. II, 2022, 69, 214
DOI: 10.1109/TCSII.2021.3091437

Synthesis of memristive one-ports with piecewise-smooth characteristics

Vladimir Semenov

International Journal of Electronics Letters, 2024, 12, 59
DOI: 10.1080/21681724.2022.2148286

Dynamic resistive switching devices for neuromorphic computing

Yuting Wu, Xinxin Wang and Wei D Lu

Semicond. Sci. Technol., 2022, 37, 024003
DOI: 10.1088/1361-6641/ac41e4

Stochastic Electronics: A Neuro-Inspired Design Paradigm for Integrated Circuits

Tara Julia Hamilton, Saeed Afshar, Andre van Schaik and Jonathan Tapson

Proc. IEEE, 2014, 102, 843
DOI: 10.1109/JPROC.2014.2310713

Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

F. Pan, S. Gao, C. Chen, C. Song and F. Zeng

Materials Science and Engineering: R: Reports, 2014, 83, 1
DOI: 10.1016/j.mser.2014.06.002

A memristive spiking neuron with firing rate coding

Marina Ignatov, Martin Ziegler, Mirko Hansen, Adrian Petraru and Hermann Kohlstedt

Front. Neurosci., 2015, 9
DOI: 10.3389/fnins.2015.00376

A Monolithic Stochastic Computing Architecture for Energy Efficient Arithmetic

Harikrishnan Ravichandran, Yikai Zheng, Thomas F Schranghamer, Nicholas Trainor, Joan M. Redwing and Saptarshi Das

Advanced Materials, 2023, 35
DOI: 10.1002/adma.202206168

Electrical Performance of Large-Area Y2O3 Memristive Crossbar Array With Ultralow C2C Variability

Sanjay Kumar, Ajay Agarwal and Shaibal Mukherjee

IEEE Trans. Electron Devices, 2022, 69, 3660
DOI: 10.1109/TED.2022.3172400

Biomemristors as the next generation bioelectronics

Bai Sun, Guangdong Zhou, Tao Guo, Y. Norman Zhou and Yimin A. Wu

Nano Energy, 2020, 75, 104938
DOI: 10.1016/j.nanoen.2020.104938

OxRAM RNG Circuits Exploiting Multiple Undesirable Nanoscale Phenomena

Shubham Sahay, Ashwani Kumar, Vivek Parmar and Manan Suri

IEEE Trans. Nanotechnology, 2017, 16, 560
DOI: 10.1109/TNANO.2016.2647623

On the Application of a Diffusive Memristor Compact Model to Neuromorphic Circuits

Agustín Cisternas Ferri, Alan Rapoport, Pablo I. Fierens, German A. Patterson, Enrique Miranda and Jordi Suñé

Materials, 2019, 12, 2260
DOI: 10.3390/ma12142260

Memristors Empower Spiking Neurons With Stochasticity

Maruan Al-Shedivat, Rawan Naous, Gert Cauwenberghs and Khaled Nabil Salama

IEEE J. Emerg. Sel. Topics Circuits Syst., 2015, 5, 242
DOI: 10.1109/JETCAS.2015.2435512

Leveraging stochasticity in memristive synapses for efficient and reliable neuromorphic systems

Hritom Das, Karan P. Patel, Rocco D. Febbo, Catherine D. Schuman and Garrett S. Rose

npj Unconv. Comput., 2025, 2
DOI: 10.1038/s44335-024-00017-x

An efficient analog Hamming distance comparator realized with a unipolar memristor array: a showcase of physical computing

Ning Ge, Jung Ho Yoon, Miao Hu, E. J. Merced-Grafals, Noraica Davila, John Paul Strachan, Zhiyong Li, Helen Holder, Qiangfei Xia, R. Stanley Williams, Xing Zhou and J. Joshua Yang

Sci Rep, 2017, 7
DOI: 10.1038/srep40135

Memristive Physically Evolving Networks Enabling the Emulation of Heterosynaptic Plasticity

Yuchao Yang, Bing Chen and Wei D. Lu

Advanced Materials, 2015, 27, 7720
DOI: 10.1002/adma.201503202

Memristor‐Based Efficient In‐Memory Logic for Cryptologic and Arithmetic Applications

Liying Xu, Rui Yuan, Zhenhua Zhu, Keqin Liu, Zhaokun Jing, Yimao Cai, Yu Wang, Yuchao Yang and Ru Huang

Adv Materials Technologies, 2019, 4
DOI: 10.1002/admt.201900212

Energy-efficient Design of MTJ-based Neural Networks with Stochastic Computing

Ankit Mondal and Ankur Srivastava

J. Emerg. Technol. Comput. Syst., 2020, 16, 1
DOI: 10.1145/3359622

Skeleton-supported stochastic networks of organic memristive devices: Adaptations and learning

Svetlana Erokhina, Vladimir Sorokin and Victor Erokhin

AIP Advances, 2015, 5
DOI: 10.1063/1.4913374

Integrated analog neurons inspired by mimicking synapses with metal-oxide memristive devices

Takao Marukame, Junichi Sugino, Toshimitsu Kitamura, Koji Takahashi, Yutaka Tamura, Kumiko Nomura, Koichi Mizushima and Yoshifumi Nishi

Jpn. J. Appl. Phys., 2020, 59, 040606
DOI: 10.35848/1347-4065/ab8164

Synaptic Weight States in a Locally Competitive Algorithm for Neuromorphic Memristive Hardware

Walt Woods, Jens Burger and Christof Teuscher

IEEE Trans. Nanotechnology, 2015, 14, 945
DOI: 10.1109/TNANO.2015.2449835

Probabilistic memristive networks: Application of a master equation to networks of binary ReRAM cells

Vincent J. Dowling, Valeriy A. Slipko and Yuriy V. Pershin

Chaos, Solitons & Fractals, 2021, 142, 110385
DOI: 10.1016/j.chaos.2020.110385

Anticipation of digital patterns

Karlheinz Ochs, Martin Ziegler, Eloy Hernandez‐Guevara, Enver Solan, Marina Ignatov, Mirko Hansen, Mahal Singh Gill and Hermann Kohlstedt

Circuit Theory & Apps, 2018, 46, 235
DOI: 10.1002/cta.2381

A Seamless, Reconfigurable, and Highly Parallel In-Memory Stochastic Computing Approach With Resistive Random Access Memory Array

Wensheng Shen, Peng Huang, Mengqi Fan, Yudi Zhao, Yulin Feng, Lifeng Liu, Xiaoyan Liu, Xing Zhang and Jinfeng Kang

IEEE Trans. Electron Devices, 2021, 68, 103
DOI: 10.1109/TED.2020.3037279

Effects of stochastic forces on the nonlinear behaviour of a silicon nitride membrane nanoelectromechanical resonator

Srisaran Venkatachalam and Xin Zhou

Nanotechnology, 2023, 34, 215202
DOI: 10.1088/1361-6528/acbeb0

Analog-Tunable Nonvolatile Regulator-Free Memristors for Neuromorphic Controlling

Seung Jun Ki, Shiwoo Lee, Xiaoqiu An, Jisoo Kim, Mingze Chen and Xiaogan Liang

ACS Nano, 2026, 20, 6798
DOI: 10.1021/acsnano.5c16447

Memcapacitive to Memristive Transition in Al/Y2O3/GZO Crossbar Array

Sanjay Kumar, Mohit Kumar Gautam, Saurabh Yadav and Shaibal Mukherjee

IEEE Trans. Electron Devices, 2023, 70, 3341
DOI: 10.1109/TED.2023.3265622

Maximizing the Number of Threshold Logic Functions Using Resistive Memory

Seyed Nima Mozaffari and Spyros Tragoudas

IEEE Trans. Nanotechnology, 2018, 17, 897
DOI: 10.1109/TNANO.2018.2822285

Multifunctional Analog Resistance Switching of Si3N4-Based Memristors through Migration of Ag+ Ions and Formation of Si-Dangling Bonds

Dongyang Li, Chunmei Li, Jinyong Wang, Ming Xu, Jian Ma, Deen Gu, Fucai Liu, Yadong Jiang and Wei Li

J. Phys. Chem. Lett., 2022, 13, 5101
DOI: 10.1021/acs.jpclett.2c00893

A Hardware Architecture for Columnar-Organized Memory Based on CMOS Neuron and Memristor Crossbar Arrays

Jafar Shamsi, Karim Mohammadi and Shahriar B. Shokouhi

IEEE Trans. VLSI Syst., 2018, 26, 2795
DOI: 10.1109/TVLSI.2018.2815025

Reliable Memristive Switching Empowered by Ag/NiO/W ReRAM Configuration for Multi‐Level Non‐Volatile Memory Applications

Manvendra Chauhan, Sumit Choudhary and Satinder K. Sharma

Adv Elect Materials, 2024, 10
DOI: 10.1002/aelm.202300724

Feature Extraction Using Memristor Networks

Patrick M. Sheridan, Chao Du and Wei D. Lu

IEEE Trans. Neural Netw. Learning Syst., 2016, 27, 2327
DOI: 10.1109/TNNLS.2015.2482220

In-memory computing to break the memory wall*

Xiaohe Huang, Chunsen Liu, Yu-Gang Jiang and Peng Zhou

Chinese Phys. B, 2020, 29, 078504
DOI: 10.1088/1674-1056/ab90e7

Memristive stochastic plasticity enables mimicking of neural synchrony: Memristive circuit emulates an optical illusion

Marina Ignatov, Martin Ziegler, Mirko Hansen and Hermann Kohlstedt

Sci. Adv., 2017, 3
DOI: 10.1126/sciadv.1700849

A Low‐Current and Analog Memristor with Ru as Mobile Species

Jung Ho Yoon, Jiaming Zhang, Peng Lin, Navnidhi Upadhyay, Peng Yan, Yuzi Liu, Qiangfei Xia and J. Joshua Yang

Advanced Materials, 2020, 32
DOI: 10.1002/adma.201904599

True Random Number Generation by Variability of Resistive Switching in Oxide-Based Devices

Simone Balatti, Stefano Ambrogio, Zhongqiang Wang and Daniele Ielmini

IEEE J. Emerg. Sel. Topics Circuits Syst., 2015, 5, 214
DOI: 10.1109/JETCAS.2015.2426492

Performance improvement of chip-level CMOS-integrated ReRAM cells through material optimization

Elmira Shahrabi, Thomas LaGrange, Tugba Demirci and Yusuf Leblebici

Microelectronic Engineering, 2019, 214, 74
DOI: 10.1016/j.mee.2019.04.018

True Random Number Generator Integration in a Resistive RAM Memory Array Using Input Current Limitation

Hassen Aziza, Jeremy Postel-Pellerin, Hussein Bazzi, Pierre Canet, Mathieu Moreau, Vincenzo Della Marca and Adnan Harb

IEEE Trans. Nanotechnology, 2020, 19, 214
DOI: 10.1109/TNANO.2020.2976735

A method of generating random bits by using electronic bipolar memristor*

Bin-Bin Yang, Nuo Xu, Er-Rui Zhou, Zhi-Wei Li, Cheng Li, Pin-Yun Yi and Liang Fang

Chinese Phys. B, 2020, 29, 048505
DOI: 10.1088/1674-1056/ab77fd

Stochastic resistive switching in memristors as physically unclonable functions

Chang-Jae Beak, Sungju Park, Jeongbeen Park, Hea-Lim Park and Sin-Hyung Lee

J. Phys. D: Appl. Phys., 2025, 58, 443002
DOI: 10.1088/1361-6463/ae09b8

Utilizing the Switching Stochasticity of HfO2/TiOx-Based ReRAM Devices and the Concept of Multiple Device Synapses for the Classification of Overlapping and Noisy Patterns

Christopher Bengel, Felix Cüppers, Melika Payvand, Regina Dittmann, Rainer Waser, Susanne Hoffmann-Eifert and Stephan Menzel

Front. Neurosci., 2021, 15
DOI: 10.3389/fnins.2021.661856

Physical Unbiased Generation of Random Numbers With Coupled Resistive Switching Devices

Simone Balatti, Stefano Ambrogio, Roberto Carboni, Valerio Milo, Zhongqiang Wang, Alessandro Calderoni, Nirmal Ramaswamy and Daniele Ielmini

IEEE Trans. Electron Devices, 2016, 63, 2029
DOI: 10.1109/TED.2016.2537792

Stochasticity invariance control in Pr1−x Ca x MnO3 RRAM to enable large-scale stochastic recurrent neural networks

Vivek Saraswat and Udayan Ganguly

Neuromorph. Comput. Eng., 2022, 2, 014001
DOI: 10.1088/2634-4386/ac408a

Standards for the Characterization of Endurance in Resistive Switching Devices

Mario Lanza, Rainer Waser, Daniele Ielmini, J. Joshua Yang, Ludovic Goux, Jordi Suñe, Anthony Joseph Kenyon, Adnan Mehonic, Sabina Spiga, Vikas Rana, Stefan Wiefels, Stephan Menzel, Ilia Valov, Marco A. Villena, Enrique Miranda, Xu Jing, Francesca Campabadal, Mireia B. Gonzalez, Fernando Aguirre, Felix Palumbo, Kaichen Zhu, Juan Bautista Roldan, Francesco Maria Puglisi, Luca Larcher, Tuo-Hung Hou, Themis Prodromakis, Yuchao Yang, Peng Huang, Tianqing Wan, Yang Chai, Kin Leong Pey, Nagarajan Raghavan, Salvador Dueñas, Tao Wang, Qiangfei Xia and Sebastian Pazos

ACS Nano, 2021, 15, 17214
DOI: 10.1021/acsnano.1c06980

A Lightweight CNN Based on Memristive Stochastic Computing for Electronic Nose

Bin Yang, Tao Chen, Ai Chen, Shukai Duan and Lidan Wang

Int. J. Bifurcation Chaos, 2024, 34
DOI: 10.1142/S0218127424500275

Blooming and pruning: learning from mistakes with memristive synapses

Kristina Nikiruy, Eduardo Perez, Andrea Baroni, Keerthi Dorai Swamy Reddy, Stefan Pechmann, Christian Wenger and Martin Ziegler

Sci Rep, 2024, 14
DOI: 10.1038/s41598-024-57660-4

Compact Model of HfOX-Based Electronic Synaptic Devices for Neuromorphic Computing

Peng Huang, Dongbin Zhu, Sijie Chen, Zheng Zhou, Zhe Chen, Bin Gao, Lifeng Liu, Xiaoyan Liu and Jinfeng Kang

IEEE Trans. Electron Devices, 2017, 64, 614
DOI: 10.1109/TED.2016.2643162

Emergent dynamics of neuromorphic nanowire networks

Adrian Diaz-Alvarez, Rintaro Higuchi, Paula Sanz-Leon, Ido Marcus, Yoshitaka Shingaya, Adam Z. Stieg, James K. Gimzewski, Zdenka Kuncic and Tomonobu Nakayama

Sci Rep, 2019, 9
DOI: 10.1038/s41598-019-51330-6

Stochastic memristive devices for low cost learning of spatiotemporal signals in spiking neural networks

Aabid Amin Fida and Sparsh Mittal

Eng. Res. Express, 2024, 6, 045364
DOI: 10.1088/2631-8695/ad9a3e

Modeling-Based Design of Memristive Devices for Brain-Inspired Computing

Yudi Zhao, Ruiqi Chen, Peng Huang and Jinfeng Kang

Front. Nanotechnol., 2021, 3
DOI: 10.3389/fnano.2021.654418

Inherent Stochastic Learning in CMOS-Integrated HfO2 Arrays for Neuromorphic Computing

C. Wenger, F. Zahari, M. K. Mahadevaiah, E. Perez, I. Beckers, H. Kohlstedt and M. Ziegler

IEEE Electron Device Lett., 2019, 40, 639
DOI: 10.1109/LED.2019.2900867

On‐Demand Reconfiguration of Nanomaterials: When Electronics Meets Ionics

Jihang Lee and Wei D. Lu

Advanced Materials, 2018, 30
DOI: 10.1002/adma.201702770

Probabilistic model of resistance jumps in memristive devices

Valeriy A. Slipko and Yuriy V. Pershin

Phys. Rev. E, 2023, 107
DOI: 10.1103/PhysRevE.107.064117

Hard and soft excitation of oscillations in memristor-based oscillators with a line of equilibria

Ivan A. Korneev, Tatiana E. Vadivasova and Vladimir V. Semenov

Nonlinear Dyn, 2017, 89, 2829
DOI: 10.1007/s11071-017-3628-5

An overview of phase-change memory device physics

Manuel Le Gallo and Abu Sebastian

J. Phys. D: Appl. Phys., 2020, 53, 213002
DOI: 10.1088/1361-6463/ab7794

A Data-Driven Verilog-A ReRAM Model

Ioannis Messaris, Alexander Serb, Spyros Stathopoulos, Ali Khiat, Spyridon Nikolaidis and Themistoklis Prodromakis

IEEE Trans. Comput.-Aided Des. Integr. Circuits Syst., 2018, 37, 3151
DOI: 10.1109/TCAD.2018.2791468

Dendritic-Inspired Processing Enables Bio-Plausible STDP in Compound Binary Synapses

Xinyu Wu and Vishal Saxena

IEEE Trans. Nanotechnology, 2019, 18, 149
DOI: 10.1109/TNANO.2018.2871680

A recipe for creating ideal hybrid memristive-CMOS neuromorphic processing systems

E. Chicca and G. Indiveri

Applied Physics Letters, 2020, 116
DOI: 10.1063/1.5142089

Stochasticity Modeling in Memristors

Rawan Naous, Maruan Al-Shedivat and Khaled Nabil Salama

IEEE Trans. Nanotechnology, 2016, 15, 15
DOI: 10.1109/TNANO.2015.2493960

Analyzing Bridge Synaptic Neuron Circuit and Mapping to Memristor Crossbar for Neuromorphic Application

Pravanjan Samanta, Dev Narayan Yadav, Partha Pratim Das and Indranil Sengupta

J CIRCUIT SYST COMP, 2026
DOI: 10.1142/S0218126626500775

Extended memory lifetime in spiking neural networks employing memristive synapses with nonlinear conductance dynamics

S Brivio, D Conti, M V Nair, J Frascaroli, E Covi, C Ricciardi, G Indiveri and S Spiga

Nanotechnology, 2019, 30, 015102
DOI: 10.1088/1361-6528/aae81c

Stochastic CBRAM-Based Neuromorphic Time Series Prediction System

Cory Merkel, Dhireesha Kudithipudi, Manan Suri and Bryant Wysocki

J. Emerg. Technol. Comput. Syst., 2017, 13, 1
DOI: 10.1145/2996193

A rate-adjustable true random number generator based on the stochastic delay of a TiN/NbOx/Pt memristor

Ran Gu, Yi Sun, Yongzhou Wang, Wei Wang and Qingjiang Li

AIP Advances, 2021, 11
DOI: 10.1063/5.0064585

A resistive switching memory device with a negative differential resistance at room temperature

Mayameen S. Kadhim, Feng Yang, Bai Sun, Yushu Wang, Tao Guo, Yongfang Jia, Ling Yuan, Yanmei Yu and Yong Zhao

Applied Physics Letters, 2018, 113
DOI: 10.1063/1.5037191

3-D Physical Electro-Thermal Modeling of Nanoscale Y2O3 Memristors for Synaptic Application

Sanjay Kumar, Mohit Kumar Gautam, Gurpreet Singh Gill and Shaibal Mukherjee

IEEE Trans. Electron Devices, 2022, 69, 3124
DOI: 10.1109/TED.2022.3166858

Fault tolerant adaptive write schemes for improving endurance and reliability of memristor memories

V. Ravi and S.R.S. Prabaharan

AEU - International Journal of Electronics and Communications, 2018, 94, 392
DOI: 10.1016/j.aeue.2018.07.023

Probabilistic computing with NbOx metal-insulator transition-based self-oscillatory pbit

Hakseung Rhee, Gwangmin Kim, Hanchan Song, Woojoon Park, Do Hoon Kim, Jae Hyun In, Younghyun Lee and Kyung Min Kim

Nat Commun, 2023, 14
DOI: 10.1038/s41467-023-43085-6

Electromechanical Emulator of Memristive Systems and Devices

Shiva Asapu and Yuriy V. Pershin

IEEE Trans. Electron Devices, 2015, 62, 3678
DOI: 10.1109/TED.2015.2478864

Ultralow Powered 2D MoS2-Based Memristive Crossbar Array for Synaptic Applications

Saurabh Yadav, Chandrabhan Patel, Manoj Kumar Rajbhar, Mayank Dubey, Dhananjay D. Kumbhar, Tukaram Dattatray Dongale, Vishal Khandelwal, Saravanan Yuvaraja, Xiaohang Li and Shaibal Mukherjee

ACS Appl. Mater. Interfaces, 2025, 17, 26871
DOI: 10.1021/acsami.5c00688

Homogeneous Spiking Neuromorphic System for Real-World Pattern Recognition

Xinyu Wu, Vishal Saxena and Kehan Zhu

IEEE J. Emerg. Sel. Topics Circuits Syst., 2015, 5, 254
DOI: 10.1109/JETCAS.2015.2433552

Analog Switching and Artificial Synaptic Behavior of Ag/SiOx:Ag/TiOx/p++-Si Memristor Device

Nasir Ilyas, Dongyang Li, Chunmei Li, Xiangdong Jiang, Yadong Jiang and Wei Li

Nanoscale Res Lett, 2020, 15
DOI: 10.1186/s11671-020-3249-7

Ferroelectric FET-Based Bayesian Inference Engine for Disease Diagnosis

Arka Chakraborty, Musaib Rafiq, Yawar Hayat Zarkob, Yogesh Singh Chauhan and Shubham Sahay

IEEE Trans. Circuits Syst. I, 2025, 72, 1547
DOI: 10.1109/TCSI.2025.3533044

A review of MXene memristors and their applications

Mrinal K. Hota, Sebastian Pazos, Mario Lanza and Husam N. Alshareef

Materials Science and Engineering: R: Reports, 2025, 164, 100983
DOI: 10.1016/j.mser.2025.100983

A compound memristive synapse model for statistical learning through STDP in spiking neural networks

Johannes Bill and Robert Legenstein

Front. Neurosci., 2014, 8
DOI: 10.3389/fnins.2014.00412

Forgetting memristor based neuromorphic system for pattern training and recognition

Peijian Zhang, Chuandong Li, Tingwen Huang, Ling Chen and Yiran Chen

Neurocomputing, 2017, 222, 47
DOI: 10.1016/j.neucom.2016.10.012

An All-Memristor Deep Spiking Neural Computing System: A Step Toward Realizing the Low-Power Stochastic Brain

Parami Wijesinghe, Aayush Ankit, Abhronil Sengupta and Kaushik Roy

IEEE Trans. Emerg. Top. Comput. Intell., 2018, 2, 345
DOI: 10.1109/TETCI.2018.2829924

Bayesian Inference With Muller C-Elements

Joseph S. Friedman, Laurie E. Calvet, Pierre Bessiere, Jacques Droulez and Damien Querlioz

IEEE Trans. Circuits Syst. I, 2016, 63, 895
DOI: 10.1109/TCSI.2016.2546064

Bioinspired Programming of Memory Devices for Implementing an Inference Engine

Damien Querlioz, Olivier Bichler, Adrien Francis Vincent and Christian Gamrat

Proc. IEEE, 2015, 103, 1398
DOI: 10.1109/JPROC.2015.2437616

Threshold Switching of Ag or Cu in Dielectrics: Materials, Mechanism, and Applications

Zhongrui Wang, Mingyi Rao, Rivu Midya, Saumil Joshi, Hao Jiang, Peng Lin, Wenhao Song, Shiva Asapu, Ye Zhuo, Can Li, Huaqiang Wu, Qiangfei Xia and J. Joshua Yang

Adv Funct Materials, 2018, 28
DOI: 10.1002/adfm.201704862

Analogue pattern recognition with stochastic switching binary CMOS-integrated memristive devices

Finn Zahari, Eduardo Pérez, Mamathamba Kalishettyhalli Mahadevaiah, Hermann Kohlstedt, Christian Wenger and Martin Ziegler

Sci Rep, 2020, 10
DOI: 10.1038/s41598-020-71334-x

Spontaneous magnetization reversal caused by thermal fluctuation in a GdFeCo/Ir/GdFeCo synthetic ferrimagnet

Maxim V Bakhmetiev, Alexander I Chernov and Roman B Morgunov

J. Phys. D: Appl. Phys., 2025, 58, 175001
DOI: 10.1088/1361-6463/adbbfd

Stochastic artificial neuron based on Ovonic Threshold Switch (OTS) and its applications for Restricted Boltzmann Machine (RBM)

Seongil Im, JinGyeong Hwang, Jae-Seung Jeong, Hyejin Lee, Min Hyuk Park, Jeong Ho Cho, Hyunsu Ju and Suyoun Lee

Chaos, Solitons & Fractals, 2024, 186, 115195
DOI: 10.1016/j.chaos.2024.115195

Computational phase-change memory: beyond von Neumann computing

Abu Sebastian, Manuel Le Gallo and Evangelos Eleftheriou

J. Phys. D: Appl. Phys., 2019, 52, 443002
DOI: 10.1088/1361-6463/ab37b6

Lightweight error-tolerant edge detection using memristor-enabled stochastic computing

Lekai Song, Pengyu Liu, Jingfang Pei, Yang Liu, Songwei Liu, Shengbo Wang, Leonard W. T. Ng, Tawfique Hasan, Kong-Pang Pun, Shuo Gao and Guohua Hu

Nat Commun, 2025, 16
DOI: 10.1038/s41467-025-59872-2

High-speed true random number generation based on paired memristors for security electronics

Teng Zhang, Minghui Yin, Changmin Xu, Xiayan Lu, Xinhao Sun, Yuchao Yang and Ru Huang

Nanotechnology, 2017, 28, 455202
DOI: 10.1088/1361-6528/aa8b3a

Memristive Stochastic Computing for Deep Learning Parameter Optimization

Corey Lammie, Jason K. Eshraghian, Wei D. Lu and Mostafa Rahimi Azghadi

IEEE Trans. Circuits Syst. II, 2021, 68, 1650
DOI: 10.1109/TCSII.2021.3065932

Double quantum dot memristor

Ying Li, Gregory W. Holloway, Simon C. Benjamin, G. Andrew D. Briggs, Jonathan Baugh and Jan A. Mol

Phys. Rev. B, 2017, 96
DOI: 10.1103/PhysRevB.96.075446

Tolerance of intrinsic device variation in fuzzy restricted Boltzmann machine network based on memristive nano-synapses

Teng Zhang, Minghui Yin, Xiayan Lu, Yimao Cai, Yuchao Yang and Ru Huang

Nano Futures, 2017, 1, 015003
DOI: 10.1088/2399-1984/aa678b

RM-NTT: An RRAM-Based Compute-in-Memory Number Theoretic Transform Accelerator

Yongmo Park, Ziyu Wang, Sangmin Yoo and Wei D. Lu

IEEE J. Explor. Solid-State Comput. Devices Circuits, 2022, 8, 93
DOI: 10.1109/JXCDC.2022.3202517

True Random Number Generation Using Read Noise of Flash Memory Cells

Biswajit Ray and Aleksandar Milenkovic

IEEE Trans. Electron Devices, 2018, 65, 963
DOI: 10.1109/TED.2018.2792436

Stochastic phase-change neurons

Tomas Tuma, Angeliki Pantazi, Manuel Le Gallo, Abu Sebastian and Evangelos Eleftheriou

Nature Nanotech, 2016, 11, 693
DOI: 10.1038/nnano.2016.70

Influence of programming-pulse properties on weight-update characteristics of charge-trapping IGZO synaptic transistors

Younggeon Ko, Jaeyeong Ryu, Jeongseok Pi, Danyoung Cha and Sungsik Lee

Sci Rep, 2026
DOI: 10.1038/s41598-026-44949-9

Implication of unsafe writing on the MAGIC NOR gate

Xi Zhu, Hongchang Long, Zhiwei Li, Jietao Diao, Haijun Liu, Nan Li and Hui Xu

Microelectronics Journal, 2020, 103, 104866
DOI: 10.1016/j.mejo.2020.104866

Abnormal resistive switching in electrodeposited Prussian White thin films

F.L. Faita, L.B. Avila, J.P.B. Silva, M.H. Boratto, C.C. Plá Cid, C.F.O. Graeff, M.J.M. Gomes, C.K. Müller and A.A. Pasa

Journal of Alloys and Compounds, 2022, 896, 162971
DOI: 10.1016/j.jallcom.2021.162971

Role of an Interfacial Layer in Ta2O5‐Based Resistive Switching Devices for Improved Endurance and Reliable Multibit Operation

Dong Kyu Lee, Gun Hwan Kim, Hyunchul Sohn and Min Kyu Yang

Physica Rapid Research Ltrs, 2020, 14
DOI: 10.1002/pssr.201900646

Enhanced Retention Characteristics of Subthreshold Hf-ZnO Synaptic Pass-Transistors with Ultralow Power Consumption

Danyoung Cha, Jeongseok Pi and Sungsik Lee

ACS Appl. Mater. Interfaces, 2025, 17, 32667
DOI: 10.1021/acsami.5c05717

Artificial neural networks based on memristive devices

Vignesh Ravichandran, Can Li, Ali Banagozar, J. Joshua Yang and Qiangfei Xia

Sci. China Inf. Sci., 2018, 61
DOI: 10.1007/s11432-018-9425-1

An artificial nociceptor based on a diffusive memristor

Jung Ho Yoon, Zhongrui Wang, Kyung Min Kim, Huaqiang Wu, Vignesh Ravichandran, Qiangfei Xia, Cheol Seong Hwang and J. Joshua Yang

Nat Commun, 2018, 9
DOI: 10.1038/s41467-017-02572-3

An Energy-Efficient Solid-State Organic Device Array for Neuromorphic Computing

Lan Shen Hu, Marco Fattori, Winston Schilp, Roy Verbeek, Setareh Kazemzadeh, Yoeri van de Burgt, Auke Jisk Kronemeijer, Gerwin Gelinck and Eugenio Cantatore

IEEE Trans. Electron Devices, 2023, 70, 6520
DOI: 10.1109/TED.2023.3327947

Recent trends in hardware security exploiting hybrid CMOS-resistive memory circuits

Shubham Sahay and Manan Suri

Semicond. Sci. Technol., 2017, 32, 123001
DOI: 10.1088/1361-6641/aa8f07

Memristive Ising circuits

Vincent J. Dowling and Yuriy V. Pershin

Phys. Rev. E, 2022, 106
DOI: 10.1103/PhysRevE.106.054156

Pr x Ca 1 − x MnO 3 based stochastic neuron for Boltzmann machine to solve “maximum cut” problem

Devesh Khilwani, Vineet Moghe, Sandip Lashkare, Vivek Saraswat, Pankaj Kumbhare, Maryam Shojaei Baghini, Srivatsava Jandhyala, Sreenivas Subramoney and Udayan Ganguly

APL Materials, 2019, 7
DOI: 10.1063/1.5108694

MTJ-based random number generation and its application in SNN handwritten digits recognition

Xiaomi Chen, Hai Li, Haodong Fan, Jiayu Fu and Tiejun Zhou

AIP Advances, 2023, 13
DOI: 10.1063/5.0160279

A Nonvolatile Bipolar Optical Fiber Memory Based on Phase Change Materials

Jiapeng Sun, Hanyang Li, Yifan Qin, Siying Cheng, Jinhua Mou, Jiaxing Gao, Yu Zhang and Zhihai Liu

ACS Photonics, 2024, 11, 102
DOI: 10.1021/acsphotonics.3c01022

Electroforming-Free Y2O3Memristive Crossbar Array with Low Variability

Sanjay Kumar, Mangal Das, Myo Than Htay, Sharath Sriram and Shaibal Mukherjee

ACS Appl. Electron. Mater., 2022, 4, 3080
DOI: 10.1021/acsaelm.2c00472

Unraveling the Roles of Switching and Relaxation Times in Volatile Electrochemical Memristors to Mimic Neuromorphic Dynamical Features

Mrinmoy Dutta, Stefano Brivio and Sabina Spiga

Adv Elect Materials, 2024, 10
DOI: 10.1002/aelm.202400221

Synchronization of two memristively coupled van der Pol oscillators

M. Ignatov, M. Hansen, M. Ziegler and H. Kohlstedt

Applied Physics Letters, 2016, 108
DOI: 10.1063/1.4942832

Wafer-scale integration of two-dimensional materials in high-density memristive crossbar arrays for artificial neural networks

Shaochuan Chen, Mohammad Reza Mahmoodi, Yuanyuan Shi, Chandreswar Mahata, Bin Yuan, Xianhu Liang, Chao Wen, Fei Hui, Deji Akinwande, Dmitri B. Strukov and Mario Lanza

Nat Electron, 2020, 3, 638
DOI: 10.1038/s41928-020-00473-w

Mixed Ionic‐Electronic Charge Transport in Layered Black‐Phosphorus for Low‐Power Memory

Taimur Ahmed, Sruthi Kuriakose, Sherif Abdulkader Tawfik, Edwin L. H. Mayes, Aishani Mazumder, Sivacarendran Balendhran, Michelle J. S. Spencer, Deji Akinwande, Madhu Bhaskaran, Sharath Sriram and Sumeet Walia

Adv Funct Materials, 2022, 32
DOI: 10.1002/adfm.202107068

Neuromorphic learning, working memory, and metaplasticity in nanowire networks

Alon Loeffler, Adrian Diaz-Alvarez, Ruomin Zhu, Natesh Ganesh, James M. Shine, Tomonobu Nakayama and Zdenka Kuncic

Sci. Adv., 2023, 9
DOI: 10.1126/sciadv.adg3289

Electronically controllable neuristor based logic gates and their applications

Ömer Faruk Tozlu, Fırat Kaçar and Yunus Babacan

AEU - International Journal of Electronics and Communications, 2021, 138, 153834
DOI: 10.1016/j.aeue.2021.153834

Stimulated Ionic Telegraph Noise in Filamentary Memristive Devices

Stefano Brivio, Jacopo Frascaroli, Erika Covi and Sabina Spiga

Sci Rep, 2019, 9
DOI: 10.1038/s41598-019-41497-3

Inherent stochasticity during insulator–metal transition in VO 2

Shaobo Cheng, Min-Han Lee, Richard Tran, Yin Shi, Xing Li, Henry Navarro, Coline Adda, Qingping Meng, Long-Qing Chen, R. C. Dynes, Shyue Ping Ong, Ivan K. Schuller and Yimei Zhu

Proc. Natl. Acad. Sci. U.S.A., 2021, 118
DOI: 10.1073/pnas.2105895118

Resistive state relaxation time in ZrO2(Y)-based memristive devices under the influence of external noise

M.N. Koryazhkina, D.O. Filatov, V.A. Shishmakova, M.E. Shenina, A.I. Belov, I.N. Antonov, V.E. Kotomina, A.N. Mikhaylov, O.N. Gorshkov, N.V. Agudov, C. Guarcello, A. Carollo and B. Spagnolo

Chaos, Solitons & Fractals, 2022, 162, 112459
DOI: 10.1016/j.chaos.2022.112459

Advantages of imperfect dice rolls over coin flips for random number generation

Douglas T. Pfeffer, Christopher R. Allemang, Shashank Misra, William Severa and J. Darby Smith

Sci Rep, 2025, 15
DOI: 10.1038/s41598-025-96492-8

In-memory computing with emerging nonvolatile memory devices

Caidie Cheng, Pek Jun Tiw, Yimao Cai, Xiaoqin Yan, Yuchao Yang and Ru Huang

Sci. China Inf. Sci., 2021, 64
DOI: 10.1007/s11432-021-3327-7

Exploring resistive switching in poly(4-vinylphenol)–graphene nano-composite films

Kyung Hyun Choi, Junaid Ali and Yang Hoi Doh

Jpn. J. Appl. Phys., 2015, 54, 035103
DOI: 10.7567/JJAP.54.035103

Development of Ag/ZnO/FTO thin film memristor using aqueous chemical route

Tukaram D. Dongale, Kishorkumar V. Khot, Sawanta S. Mali, Pramod S. Patil, Pawan K. Gaikwad, Rajanish K. Kamat and Popatrao N. Bhosale

Materials Science in Semiconductor Processing, 2015, 40, 523
DOI: 10.1016/j.mssp.2015.07.004

Approximation enhancement for stochastic Bayesian inference

Joseph S. Friedman, Jacques Droulez, Pierre Bessière, Jorge Lobo and Damien Querlioz

International Journal of Approximate Reasoning, 2017, 85, 139
DOI: 10.1016/j.ijar.2017.03.007

A Data-Driven Stochastic Memristor Model for Integrated Circuit Simulation

Lijie Xie, Jiawei Shen, Peilong Feng, Andrea Mifsud, Adil Malik, Amir Nassibi, Vichaya Manatchinapisit and Christos Papavassiliou

IEEE Trans. Comput.-Aided Des. Integr. Circuits Syst., 2025, 44, 2300
DOI: 10.1109/TCAD.2024.3485584

Truly Electroforming‐Free and Low‐Energy Memristors with Preconditioned Conductive Tunneling Paths

Jung Ho Yoon, Jiaming Zhang, Xiaochen Ren, Zhongrui Wang, Huaqiang Wu, Zhiyong Li, Mark Barnell, Qing Wu, Lincoln J. Lauhon, Qiangfei Xia and J. Joshua Yang

Adv Funct Materials, 2017, 27
DOI: 10.1002/adfm.201702010

Quantized conductance coincides with state instability and excess noise in tantalum oxide memristors

Wei Yi, Sergey E. Savel'ev, Gilberto Medeiros-Ribeiro, Feng Miao, M.-X. Zhang, J. Joshua Yang, Alexander M. Bratkovsky and R. Stanley Williams

Nat Commun, 2016, 7
DOI: 10.1038/ncomms11142

Domain wall memory: Physics, materials, and devices

Durgesh Kumar, Tianli Jin, Rachid Sbiaa, Mathias Kläui, Subhankar Bedanta, Shunsuke Fukami, Dafine Ravelosona, See-Hun Yang, Xiaoxi Liu and S.N. Piramanayagam

Physics Reports, 2022, 958, 1
DOI: 10.1016/j.physrep.2022.02.001

Evidence of soft bound behaviour in analogue memristive devices for neuromorphic computing

Jacopo Frascaroli, Stefano Brivio, Erika Covi and Sabina Spiga

Sci Rep, 2018, 8
DOI: 10.1038/s41598-018-25376-x

A True Random Number Generator Using Threshold‐Switching‐Based Memristors in an Efficient Circuit Design

Kyung Seok Woo, Yongmin Wang, Jihun Kim, Yumin Kim, Young Jae Kwon, Jung Ho Yoon, Woohyun Kim and Cheol Seong Hwang

Adv Elect Materials, 2019, 5
DOI: 10.1002/aelm.201800543

Spin-Orbit Torque Devices for Hardware Security: From Deterministic to Probabilistic Regime

Satwik Patnaik, Nikhil Rangarajan, Johann Knechtel, Ozgur Sinanoglu and Shaloo Rakheja

IEEE Trans. Comput.-Aided Des. Integr. Circuits Syst., 2020, 39, 1591
DOI: 10.1109/TCAD.2019.2917856

Voltage-Driven Hysteresis Model for Resistive Switching: SPICE Modeling and Circuit Applications

German Agustin Patterson, J. Sune and E. Miranda

IEEE Trans. Comput.-Aided Des. Integr. Circuits Syst., 2017, 36, 2044
DOI: 10.1109/TCAD.2017.2756561

Highly tunable β-relaxation enables the tailoring of crystallization in phase-change materials

Yudong Cheng, Qun Yang, Jiangjing Wang, Theodoros Dimitriadis, Mathias Schumacher, Huiru Zhang, Maximilian J. Müller, Narges Amini, Fan Yang, Alexander Schoekel, Julian Pries, Riccardo Mazzarello, Matthias Wuttig, Hai-Bin Yu and Shuai Wei

Nat Commun, 2022, 13
DOI: 10.1038/s41467-022-35005-x

Temperature Control of Diffusive Memristor Hysteresis and Artificial Neuron Spiking

D.P. Pattnaik, Y. Ushakov, Z. Zhou, P. Borisov, M.D. Cropper, U.W. Wijayantha, A.G. Balanov and S.E. Savel′ev

Phys. Rev. Applied, 2023, 19
DOI: 10.1103/PhysRevApplied.19.024065

Mixed-precision in-memory computing

Manuel Le Gallo, Abu Sebastian, Roland Mathis, Matteo Manica, Heiner Giefers, Tomas Tuma, Costas Bekas, Alessandro Curioni and Evangelos Eleftheriou

Nat Electron, 2018, 1, 246
DOI: 10.1038/s41928-018-0054-8

Memristor-based neural networks: Synaptic versus neuronal stochasticity

Rawan Naous, Maruan AlShedivat, Emre Neftci, Gert Cauwenberghs and Khaled Nabil Salama

AIP Advances, 2016, 6
DOI: 10.1063/1.4967352

Review on the Basic Circuit Elements and Memristor Interpretation: Analysis, Technology and Applications

Aliyu Isah and Jean-Marie Bilbault

JLPEA, 2022, 12, 44
DOI: 10.3390/jlpea12030044

Hybrid CMOS/memristor crossbar structure for implementing hopfield neural network

Mahdiyar Molahasani Majdabadi, Jafar Shamsi and Shahriar Baradaran Shokouhi

Analog Integr Circ Sig Process, 2021, 107, 249
DOI: 10.1007/s10470-020-01720-y

How to Build a Memristive Integrate-and-Fire Model for Spiking Neuronal Signal Generation

Sung Mo Kang, Donguk Choi, Jason K. Eshraghian, Peng Zhou, Jieun Kim, Bai-Sun Kong, Xiaojian Zhu, Ahmet Samil Demirkol, Alon Ascoli, Ronald Tetzlaff, Wei D. Lu and Leon O. Chua

IEEE Trans. Circuits Syst. I, 2021, 68, 4837
DOI: 10.1109/TCSI.2021.3126555

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

Jimin Lee, Sofía Cruces, Xiaohua Liu, Yang Chen, Vasilis A. Maroufidis, Janghyun Jo, Lukas Völkel, Dennis Braun, Michael Möller, Leon Brackmann, Holger Kalisch, Michael Heuken, Andrei Vescan, Rafal E. Dunin‐Borkowski, Joachim Mayer, Stefan Wiefels and Max C. Lemme

Adv Funct Materials, 2026
DOI: 10.1002/adfm.202527644

A Secure Integrity Checking System for Nanoelectronic Resistive RAM

Md Badruddoja Majumder, Md Sakib Hasan, Mesbah Uddin and Garett S. Rose

IEEE Trans. VLSI Syst., 2019, 27, 416
DOI: 10.1109/TVLSI.2018.2876693

More Efficient Testing of Metal-Oxide Memristor–Based Memory

Seyed Nima Mozaffari, Spyros Tragoudas and Themistoklis Haniotakis

IEEE Trans. Comput.-Aided Des. Integr. Circuits Syst., 2017, 36, 1018
DOI: 10.1109/TCAD.2016.2608863

Temporal information encoding in dynamic memristive devices

Wen Ma, Lin Chen, Chao Du and Wei D. Lu

Applied Physics Letters, 2015, 107
DOI: 10.1063/1.4935220

Versatile stochastic dot product circuits based on nonvolatile memories for high performance neurocomputing and neurooptimization

M. R. Mahmoodi, M. Prezioso and D. B. Strukov

Nat Commun, 2019, 10
DOI: 10.1038/s41467-019-13103-7

Stochastic model of memristor based on the length of conductive region

N.V. Agudov, A.A. Dubkov, A.V. Safonov, A.V. Krichigin, A.A. Kharcheva, D.V. Guseinov, M.N. Koryazhkina, A.S. Novikov, V.A. Shishmakova, I.N. Antonov, A. Carollo and B. Spagnolo

Chaos, Solitons & Fractals, 2021, 150, 111131
DOI: 10.1016/j.chaos.2021.111131

Physically transient random number generators based on flexible carbon nanotube composite threshold switching

Yanmei Sun and Dianzhong Wen

Journal of Alloys and Compounds, 2020, 844, 156144
DOI: 10.1016/j.jallcom.2020.156144

Comparison of the Electrical Response of Cu and Ag Ion-Conducting SDC Memristors Over the Temperature Range 6 K to 300 K

Kolton Drake, Tonglin Lu, Md. Majumdar and Kristy Campbell

Micromachines, 2019, 10, 663
DOI: 10.3390/mi10100663

Recent trends in neuromorphic systems for non-von Neumann in materia computing and cognitive functionalities

Indrajit Mondal, Rohit Attri, Tejaswini S. Rao, Bhupesh Yadav and Giridhar U. Kulkarni

Applied Physics Reviews, 2024, 11
DOI: 10.1063/5.0220628

Fabrication of zinc stannate based all-printed resistive switching device

Ghayas-ud-din Siddiqui, Junaid Ali, Yang-Hoi Doh and Kyung Hyun Choi

Materials Letters, 2016, 166, 311
DOI: 10.1016/j.matlet.2015.12.045

Survey of Stochastic-Based Computation Paradigms

Mohammed Alawad and Mingjie Lin

IEEE Trans. Emerg. Topics Comput., 2019, 7, 98
DOI: 10.1109/TETC.2016.2598726

Stochastic Memory Devices for Security and Computing

Roberto Carboni and Daniele Ielmini

Adv Elect Materials, 2019, 5
DOI: 10.1002/aelm.201900198

Design of a Controllable Redox‐Diffusive Threshold Switching Memristor

Yiming Sun, Cheng Song, Siqi Yin, Leilei Qiao, Qin Wan, Rui Wang, Fei Zeng and Feng Pan

Adv Elect Materials, 2020, 6
DOI: 10.1002/aelm.202000695

Pulse Shape and Timing Dependence on the Spike-Timing Dependent Plasticity Response of Ion-Conducting Memristors as Synapses

Kristy A. Campbell, Kolton T. Drake and Elisa H. Barney Smith

Front. Bioeng. Biotechnol., 2016, 4
DOI: 10.3389/fbioe.2016.00097

Effect of Device Mismatches in Differential Oscillatory Neural Networks

Jafar Shamsi, Maria Jose Avedillo, Bernabe Linares-Barranco and Teresa Serrano-Gotarredona

IEEE Trans. Circuits Syst. I, 2023, 70, 872
DOI: 10.1109/TCSI.2022.3221540

Applications of MXene-based memristors in neuromorphic intelligence applications

Xiaojuan Lian, Yuelin Shi, Shiyu Li, Bingxin Ding, Chenfei Hua and Lei Wang

Contemporary Physics, 2022, 63, 87
DOI: 10.1080/00107514.2022.2160542

Self-clocking fast and variation tolerant true random number generator based on a stochastic mott memristor

Gwangmin Kim, Jae Hyun In, Young Seok Kim, Hakseung Rhee, Woojoon Park, Hanchan Song, Juseong Park and Kyung Min Kim

Nat Commun, 2021, 12
DOI: 10.1038/s41467-021-23184-y

Hardware Implementation of Bayesian Decision‐Making with Memristors

Lekai Song, Pengyu Liu, Yang Liu, Jingfang Pei, Wenyu Cui, Songwei Liu, Yingyi Wen, Teng Ma, Kong‐Pang Pun, Leonard W. T. Ng and Guohua Hu

Adv Elect Materials, 2025, 11
DOI: 10.1002/aelm.202500134

All Spin Artificial Neural Networks Based on Compound Spintronic Synapse and Neuron

Deming Zhang, Weisheng Zhao, Lang Zeng, Kaihua Cao, Mengxing Wang, Shouzhong Peng, Yue Zhang, Youguang Zhang, Jacques-Olivier Klein and Yu Wang

IEEE Trans. Biomed. Circuits Syst., 2016, 10, 828
DOI: 10.1109/TBCAS.2016.2533798

Designing Asymmetric Memristive Behavior in Proton Mixed Conductors for Neuromorphic Applications

Nada H. A. Besisa, Masaki Tsuji, Yoshihiro Furue, Yifan Geng, Satya P. Pati, Satoshi Hamasuna and Takeaki Yajima

Adv Funct Materials, 2026, 36
DOI: 10.1002/adfm.202525988

A Physics-Based Compact Model of Stochastic Switching in Spin-Transfer Torque Magnetic Memory

Roberto Carboni, Elena Vernocchi, Manzar Siddik, Jon Harms, Andy Lyle, Gurtej Sandhu and Daniele Ielmini

IEEE Trans. Electron Devices, 2019, 66, 4176
DOI: 10.1109/TED.2019.2933315

Enhanced memristor‐based MNNs performance on noisy dataset resulting from memristive stochasticity

Kechuan Wu and Xiaoping Wang

IET Circuits, Devices & Syst, 2019, 13, 704
DOI: 10.1049/iet-cds.2018.5532

Resistive Switching Random-Access Memory (RRAM): Applications and Requirements for Memory and Computing

Daniele Ielmini and Giacomo Pedretti

Chem. Rev., 2025, 125, 5584
DOI: 10.1021/acs.chemrev.4c00845

A novel structure ZnO-Fe-ZnO thin film memristor

Y.P. Santos, E. Valença, R. Machado and M.A. Macêdo

Materials Science in Semiconductor Processing, 2018, 86, 43
DOI: 10.1016/j.mssp.2018.06.016

Resistive switching and conductance quantization in Ag/SiO2/indium tin oxide resistive memories

S. Gao, C. Chen, Z. Zhai, H. Y. Liu, Y. S. Lin, S. Z. Li, S. H. Lu, G. Y. Wang, C. Song, F. Zeng and F. Pan

Applied Physics Letters, 2014, 105
DOI: 10.1063/1.4893277

Controlling Memristive Switching Behavior of Sr2TiO4 Thin Films by Miscut Nb:SrTiO3 Substrate

Fran Kurnia and Nagarajan Valanoor

ACS Appl. Electron. Mater., 2024, 6, 6849
DOI: 10.1021/acsaelm.4c01238

Efficient Hybrid CMOS/Memristor Implementation of Bidirectional Associative Memory Using Passive Weight Array

Mahdiyar Molahasani Majdabadi, Shahriar B. Shokouhi and Seok-Bum Ko

Microelectronics Journal, 2020, 98, 104725
DOI: 10.1016/j.mejo.2020.104725

Self-organization of an inhomogeneous memristive hardware for sequence learning

Melika Payvand, Filippo Moro, Kumiko Nomura, Thomas Dalgaty, Elisa Vianello, Yoshifumi Nishi and Giacomo Indiveri

Nat Commun, 2022, 13
DOI: 10.1038/s41467-022-33476-6

A novel true random number generator based on a stochastic diffusive memristor

Hao Jiang, Daniel Belkin, Sergey E. Savel’ev, Siyan Lin, Zhongrui Wang, Yunning Li, Saumil Joshi, Rivu Midya, Can Li, Mingyi Rao, Mark Barnell, Qing Wu, J. Joshua Yang and Qiangfei Xia

Nat Commun, 2017, 8
DOI: 10.1038/s41467-017-00869-x

Innovative inventory management via convolutional neural networks based on ZnO/SnO2 nanocomposite memristor

Lizhi Zhang, Jianbiao Chen, Mingrui Liu, Xuhui Tian, Shuangju Jia, Yanxia Liang, Tao Ye, Hongyu Li, Jiangtao Chen, Jian Wang, Yun Zhao, Xuqiang Zhang, Xiaofei Dong and Yan Li

Materials Science in Semiconductor Processing, 2026, 205, 110349
DOI: 10.1016/j.mssp.2025.110349

Reconfigurable Memristive Device Technologies

Arthur H. Edwards, Hugh J. Barnaby, Kristy A. Campbell, Michael N. Kozicki, Wei Liu and Matthew J. Marinella

Proc. IEEE, 2015, 103, 1004
DOI: 10.1109/JPROC.2015.2441752

Additive manufacturing and characterization of AgI and AgI–Al2O3 composite electrolytes for resistive switching devices

Benjamin J. Brownlee, Lok-kun Tsui, Karthik Vempati, John B. Plumley, Brian D. Iverson, Thomas L. Peng and Fernando H. Garzon

Journal of Applied Physics, 2020, 128
DOI: 10.1063/5.0004120

Tailor-made synaptic dynamics based on memristive devices

Christopher Bengel, Kaihua Zhang, Johannes Mohr, Tobias Ziegler, Stefan Wiefels, Rainer Waser, Dirk Wouters and Stephan Menzel

Front. Electron. Mater, 2023, 3
DOI: 10.3389/femat.2023.1061269

2D MoS2 monolayers integration with metal oxide-based artificial synapses

Mohit Kumar Gautam, Sanjay Kumar, Shalu Rani, Ioannis Zeimpekis and Dimitra G. Georgiadou

Front. Nanotechnol., 2024, 6
DOI: 10.3389/fnano.2024.1400666

Exploiting Non-idealities of Resistive Switching Memories for Efficient Machine Learning

Victor Yon, Amirali Amirsoleimani, Fabien Alibart, Roger G. Melko, Dominique Drouin and Yann Beilliard

Front.Electron., 2022, 3
DOI: 10.3389/felec.2022.825077

Modeling and hardware implementation of universal interface-based floating fractional-order mem-elements

Ya Li, Lijun Xie, Ciyan Zheng, Dongsheng Yu and Jason K. Eshraghian

Chaos: An Interdisciplinary Journal of Nonlinear Science, 2023, 33
DOI: 10.1063/5.0124793

Neuromorphic Learning and Recognition With One-Transistor-One-Resistor Synapses and Bistable Metal Oxide RRAM

Stefano Ambrogio, Simone Balatti, Valerio Milo, Roberto Carboni, Zhong-Qiang Wang, Alessandro Calderoni, Nirmal Ramaswamy and Daniele Ielmini

IEEE Trans. Electron Devices, 2016, 63, 1508
DOI: 10.1109/TED.2016.2526647

Self-organizing neuromorphic nanowire networks as stochastic dynamical systems

Gianluca Milano, Fabio Michieletti, Davide Pilati, Carlo Ricciardi and Enrique Miranda

Nat Commun, 2025, 16
DOI: 10.1038/s41467-025-58741-2

Stochastic neuron based on IGZO Schottky diodes for neuromorphic computing

Bingjie Dang, Keqin Liu, Jiadi Zhu, Liying Xu, Teng Zhang, Caidie Cheng, Hong Wang, Yuchao Yang, Yue Hao and Ru Huang

APL Materials, 2019, 7
DOI: 10.1063/1.5109090

Construction of a Bit Stream Using Telegraphic Switching of a Two-Input Magnetic Tunnel Junction

Gi Yoon Bae, Dong Ik Suh, Young-jae Kim, Hyungjune Lee and Wanjun Park

IEEE Trans. Magn., 2017, 53, 1
DOI: 10.1109/TMAG.2017.2712821

Reconstructive sensing circuit for complementary resistive switches-based crossbar memories

Ertuğrul KARAKULAK, Reşat MUTLU and Erdem UÇAR

Turk J Elec Eng & Comp Sci, 2016, 24, 1371
DOI: 10.3906/elk-1309-71

A Mini Review of Neuromorphic Architectures and Implementations

Robert A. Nawrocki, Richard M. Voyles and Sean E. Shaheen

IEEE Trans. Electron Devices, 2016, 63, 3819
DOI: 10.1109/TED.2016.2598413

Variability and Energy Consumption Tradeoffs in Multilevel Programming of RRAM Arrays

Eduardo Perez, Mamathamba Kalishettyhalli Mahadevaiah, Emilio Perez-Bosch Quesada and Christian Wenger

IEEE Trans. Electron Devices, 2021, 68, 2693
DOI: 10.1109/TED.2021.3072868

Uncontrolled Learning: Codesign of Neuromorphic Hardware Topology for Neuromorphic Algorithms

Frank Barrows, Jonathan Lin, Francesco Caravelli and Dante R. Chialvo

Advanced Intelligent Systems, 2025, 7
DOI: 10.1002/aisy.202400739

In-memory computing with resistive switching devices

Daniele Ielmini and H.-S. Philip Wong

Nat Electron, 2018, 1, 333
DOI: 10.1038/s41928-018-0092-2

Energy-Efficient Computing With Probabilistic Magnetic Bits—Performance Modeling and Comparison Against Probabilistic CMOS Logic

Nikhil Rangarajan, Arun Parthasarathy, Nickvash Kani and Shaloo Rakheja

IEEE Trans. Magn., 2017, 53, 1
DOI: 10.1109/TMAG.2017.2696041

Magnetic domain walls: types, processes and applications

G Venkat, D A Allwood and T J Hayward

J. Phys. D: Appl. Phys., 2024, 57, 063001
DOI: 10.1088/1361-6463/ad0568

Experimental Validation of Switching Dependence of Nanoscale Y2O3 Memristors on Electrode Symmetry via Physical Electrothermal Modeling

Mohit Kumar Gautam, Sanjay Kumar, Sumit Chaudhary, Lokesh Kumar Hindoliya, Dhananjay D. Kumbhar, Jun Hong Park, Myo Than Htay and Shaibal Mukherjee

ACS Appl. Electron. Mater., 2023, 5, 3885
DOI: 10.1021/acsaelm.3c00598

A Variability‐Aware Behavioral Model of Monolayer MoS2 RRAM for Tunable Stochastic Sources

Lavanya Peddaboina, Kartik Agrawal, Piyush Kumar, Girija Hegde, Oves Badami and Shubhadeep Bhattacharjee

Advcd Theory and Sims, 2025, 8
DOI: 10.1002/adts.202401235

Multilevel Ultrafast Flexible Nanoscale Nonvolatile Hybrid Graphene Oxide–Titanium Oxide Memories

V. Karthik Nagareddy, Matthew D. Barnes, Federico Zipoli, Khue T. Lai, Arseny M. Alexeev, Monica Felicia Craciun and C. David Wright

ACS Nano, 2017, 11, 3010
DOI: 10.1021/acsnano.6b08668

Heterosynaptic Plasticity Emulated by Liquid Crystal–Carbon Nanotube Composites with Modulatory Interneurons

Ik-Jyae Kim, Min-Kyu Kim, Youngjun Park and Jang-Sik Lee

ACS Appl. Mater. Interfaces, 2020, 12, 27467
DOI: 10.1021/acsami.0c01775

Reconfigurable Stochastic neurons based on tin oxide/MoS2 hetero-memristors for simulated annealing and the Boltzmann machine

Xiaodong Yan, Jiahui Ma, Tong Wu, Aoyang Zhang, Jiangbin Wu, Matthew Chin, Zhihan Zhang, Madan Dubey, Wei Wu, Mike Shuo-Wei Chen, Jing Guo and Han Wang

Nat Commun, 2021, 12
DOI: 10.1038/s41467-021-26012-5

Synaptic element for neuromorphic computing using a magnetic domain wall device with synthetic pinning sites

Tianli Jin, Weiliang Gan, Funan Tan, N R Sernicola, Wen Siang Lew and S N Piramanayagam

J. Phys. D: Appl. Phys., 2019, 52, 445001
DOI: 10.1088/1361-6463/ab35b7

Hardware implementation of Bayesian network based on two-dimensional memtransistors

Yikai Zheng, Harikrishnan Ravichandran, Thomas F. Schranghamer, Nicholas Trainor, Joan M. Redwing and Saptarshi Das

Nat Commun, 2022, 13
DOI: 10.1038/s41467-022-33053-x

Energy-Efficient Neuromorphic Architectures for Nuclear Radiation Detection Applications

Jorge I. Canales-Verdial, Jamison R. Wagner, Landon A. Schmucker, Mark Wetzel, Philippe Proctor, Merlin Carson, Jian Meng, Nathan J. Withers, Charles Thomas Harris, John J. Nogan, Denise B. Webb, Adam A. Hecht, Christof Teuscher, Marek Osiński and Payman Zarkesh-Ha

Sensors, 2024, 24, 2144
DOI: 10.3390/s24072144

Computational capacity and energy consumption of complex resistive switch networks

Jens Burger, Alireza Goudarzi, Darko Stefanovic and Christof Teuscher

AIMS Materials Science, 2015, 2, 530
DOI: 10.3934/matersci.2015.4.530

Constructing artificial neurons with functional parameters comprehensively matching biological values

Shuai Fu, Hongyan Gao, Siqi Wang, Xiaoyu Wang, Trevor Woodard, Zhien Wang, Jing Kong, Derek R. Lovley and Jun Yao

Nat Commun, 2025, 16
DOI: 10.1038/s41467-025-63640-7

Solution-Processed Formation of DNA-Origami-Supported Polyoxometalate Multi-Level Switches with Countercation-Controlled Conductance Tunability

Eric Vogelsberg, Marco Moors, Anastasia S. Sorokina, Dmitry A. Ryndyk, Sebastian Schmitz, Jessica S. Freitag, Anastasia V. Subbotina, Thomas Heine, Bernd Abel and Kirill Yu. Monakhov

Chem. Mater., 2023, 35, 5447
DOI: 10.1021/acs.chemmater.3c00776

Tuning Resistive Switching Characteristics of Tantalum Oxide Memristors through Si Doping

Sungho Kim, ShinHyun Choi, Jihang Lee and Wei D. Lu

ACS Nano, 2014, 8, 10262
DOI: 10.1021/nn503464q

A 4-Transistors/1-Resistor Hybrid Synapse Based on Resistive Switching Memory (RRAM) Capable of Spike-Rate-Dependent Plasticity (SRDP)

Valerio Milo, Giacomo Pedretti, Roberto Carboni, Alessandro Calderoni, Nirmal Ramaswamy, Stefano Ambrogio and Daniele Ielmini

IEEE Trans. VLSI Syst., 2018, 26, 2806
DOI: 10.1109/TVLSI.2018.2818978

Memristive Synapses for Brain‐Inspired Computing

Jingrui Wang and Fei Zhuge

Adv Materials Technologies, 2019, 4
DOI: 10.1002/admt.201800544

Strategies to Control the Relaxation Kinetics of Ag‐Based Diffusive Memristors and Implications for Device Operation

Solomon Amsalu Chekol, Stephan Menzel, Rainer Waser and Susanne Hoffmann‐Eifert

Adv Elect Materials, 2022, 8
DOI: 10.1002/aelm.202200549

Physically Transient True Random Number Generators Based on Paired Threshold Switches Enabling Monte Carlo Method Applications

Bingjie Dang, Jing Sun, Teng Zhang, Saisai Wang, Mo Zhao, Keqin Liu, Liying Xu, Jiadi Zhu, Caidie Cheng, Lin Bao, Yuchao Yang, Hong Wang, Yue Hao and Ru Huang

IEEE Electron Device Lett., 2019, 40, 1096
DOI: 10.1109/LED.2019.2919914

A Native Stochastic Computing Architecture Enabled by Memristors

Phil Knag, Wei Lu and Zhengya Zhang

IEEE Trans. Nanotechnology, 2014, 13, 283
DOI: 10.1109/TNANO.2014.2300342

A Low-Power Variation-Aware Adaptive Write Scheme for Access-Transistor-Free Memristive Memory

Amirali Ghofrani, Miguel-angel lastras-montaño, Siddharth Gaba, Melika Payvand, Wei Lu, Luke Theogarajan and Kwang-Ting Cheng

J. Emerg. Technol. Comput. Syst., 2015, 12, 1
DOI: 10.1145/2717313

Flexible Memory Device Composed of Metal-Oxide and Two-Dimensional Material (SnO2/WTe2) Exhibiting Stable Resistive Switching

Ghulam Dastgeer, Amir Muhammad Afzal, Jamal Aziz, Sajjad Hussain, Syed Hassan Abbas Jaffery, Deok-kee Kim, Muhammad Imran and Mohammed Ali Assiri

Materials, 2021, 14, 7535
DOI: 10.3390/ma14247535

Spin-Transfer Torque Magnetic Memory as a Stochastic Memristive Synapse for Neuromorphic Systems

Adrien F. Vincent, Jerome Larroque, Nicolas Locatelli, Nesrine Ben Romdhane, Olivier Bichler, Christian Gamrat, Wei Sheng Zhao, Jacques-Olivier Klein, Sylvie Galdin-Retailleau and Damien Querlioz

IEEE Trans. Biomed. Circuits Syst., 2015, 9, 166
DOI: 10.1109/TBCAS.2015.2414423

Dual-state conversion for high-entropy and reconfigurable resistive memory-based physically unclonable functions

Seoyoung Park, Hyesung Na, Jaewoo Choi, Muhammad Ismail, Chandreswar Mahata, Donghyun Ryu, Sungjoon Kim, Jung-Kyu Lee, Junsu Yu and Sungjun Kim

Journal of Materials Science & Technology, 2026, 266, 38
DOI: 10.1016/j.jmst.2025.11.025

Analogue neuro-memristive convolutional dropout nets

O. Krestinskaya and A. P. James

Proc. R. Soc. A., 2020, 476
DOI: 10.1098/rspa.2020.0210

A multiply-add engine with monolithically integrated 3D memristor crossbar/CMOS hybrid circuit

B. Chakrabarti, M. A. Lastras-Montaño, G. Adam, M. Prezioso, B. Hoskins, M. Payvand, A. Madhavan, A. Ghofrani, L. Theogarajan, K.-T. Cheng and D. B. Strukov

Sci Rep, 2017, 7
DOI: 10.1038/srep42429

Memory devices and applications for in-memory computing

Abu Sebastian, Manuel Le Gallo, Riduan Khaddam-Aljameh and Evangelos Eleftheriou

Nat. Nanotechnol., 2020, 15, 529
DOI: 10.1038/s41565-020-0655-z

Fabrication of graphene-nanoflake/poly(4-vinylphenol) polymer nanocomposite thin film by electrohydrodynamic atomization and its application as flexible resistive switching device

Kyung Hyun Choi, Junaid Ali and Kyoung-Hoan Na

Physica B: Condensed Matter, 2015, 475, 148
DOI: 10.1016/j.physb.2015.07.028

Realistic Hodgkin–Huxley Axons Using Stochastic Behavior of Memristors

Mohammad Saeed Feali and Arash Ahmadi

Neural Process Lett, 2017, 45, 1
DOI: 10.1007/s11063-016-9502-5

Neuromorphic computing with memristive devices

Wen Ma, Mohammed A. Zidan and Wei D. Lu

Sci. China Inf. Sci., 2018, 61
DOI: 10.1007/s11432-017-9424-y

A Memristor SPICE Model Accounting for Volatile Characteristics of Practical ReRAM

Radu Berdan, Chuan Lim, Ali Khiat, Christos Papavassiliou and Themis Prodromakis

IEEE Electron Device Lett., 2014, 35, 135
DOI: 10.1109/LED.2013.2291158

Crossover From Deterministic to Stochastic Nature of Resistive-Switching Statistics in a Tantalum Oxide Thin Film

Yoshifumi Nishi, Ulrich Bottger, Rainer Waser and Stephan Menzel

IEEE Trans. Electron Devices, 2018, 65, 4320
DOI: 10.1109/TED.2018.2866127