Advances in Synthesis and Characterization of Phosphorene for Bandgap Tailoring—A Comprehensive Review

Abstract

Phosphorene is a two-dimensional (2D) material obtained from black phosphorus, has attracted considerable attention for its outstanding electronic properties, such as tunable bandgap and high carrier mobility. This study aims to synthesize and characterize phosphorene to explore its potential for bandgap formation, a critical property for various electronic and optoelectronic applications. We employed a liquid exfoliation technique to isolate phosphorene from bulk phosphorus, ensuring high-quality and few-layered phosphorene nanosheets. The synthesized phosphorene’s structural and morphological properties were studied with atomic force microscopy (AFM), scanning electron microscopy (SEM), and transmission electron microscopy (TEM), which verified the successful exfoliation and uniformity of the nanosheets. Raman spectroscopy and X-ray diffraction (XRD) were employed to confirm the crystalline structure and purity of the phosphorene, showing minimal defects and high crystallinity. Optical properties were investigated through ultraviolet-visible (UV-Vis) spectroscopy, revealing the characteristic absorbance peaks of phosphorene and indicating its direct bandgap nature. Photoluminescence (PL) spectroscopy was employed to measure the bandgap energy, demonstrating tunability dependent on the number of layers. From 0.33 eV in bulk to 1.88 eV in bilayers showcases phosphorene's band gap evolution in large-scale synthesis, with a higher-energy transition from 2.0 eV to 3.23 eV highlighting its unique optoelectronic properties. Phosphorene, a 2D semiconductor, is synthesized and characterized to exhibit an inherent direct band gap, dependent on layer number and strain, with a larger gap than bulk phosphorus. Field-effect transistor (FET) analysis and other electrical measurements were performed to evaluate the carrier mobility of phosphorene-based devices. The results showcased superior electronic performance, highlighting its potential for future nano electronic devices. Additionally, the stability of phosphorene in ambient conditions was evaluated, addressing a crucial challenge for its practical applications. Characterization of phosphorene underscores its promising attributes for bandgap formation, with potential applications ranging from transistors to photodetectors. The results add to the expanding research on 2D materials and their potential to transform the electronics industry. Further research is suggested to explore surface functionalization and heterostructure formation to enhance the stability and versatility of phosphorene-based devices.