Issue 23, 2021

Continuous orientated growth of scaled single-crystal 2D monolayer films

Abstract

Single-crystal 2D materials have attracted a boom of scientific and technological activities. Recently, chemical vapor deposition (CVD) shows great promise for the synthesis of high-quality 2D materials owing to high controllability, high scalability and ultra-low cost. Two types of strategies have been developed: one is single-seed method, which focuses on the ultimate control of the density of nucleation into only one nucleus and the other is a multi-seed approach, which concentrates on the precise engineering of orientation of nuclei into a uniform alignment. Currently, the latter is recognized as a more effective method to meet the demand of industrial production, whereas the oriented domains can seamlessly merge into a continuous single-crystal film in a short time. In this review, we present the detailed cases of growing the representative monocrystalline 2D materials via the single-seed CVD method as well as show its advantages and disadvantages in shaping 2D materials. Then, other typical 2D materials (including graphene, h-BN, and TMDs) are given in terms of the unique feature under the guideline of the multi-seed growth approach. Furthermore, the growth mechanism for the 2D single crystals is presented and the following application in electronics, optics and antioxidation coatings are also discussed. Finally, we outline the current challenges, and a bright development in the future of the continuous orientated growth of scaled 2D crystals should be envisioned.

Graphical abstract: Continuous orientated growth of scaled single-crystal 2D monolayer films

Article information

Article type
Review Article
Submitted
09 Jul 2021
Accepted
03 Okt 2021
First published
29 Okt 2021
This article is Open Access
Creative Commons BY license

Nanoscale Adv., 2021,3, 6545-6567

Continuous orientated growth of scaled single-crystal 2D monolayer films

Z. Han, L. Li, F. Jiao, G. Yu, Z. Wei, D. Geng and W. Hu, Nanoscale Adv., 2021, 3, 6545 DOI: 10.1039/D1NA00545F

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