Issue 8, 2020

Electromechanical dopant–defect interaction in acceptor-doped ceria

Abstract

Oxygen defective cerium oxide CeO2−δ exhibits a non-classical giant electromechanical response that is superior to that of lead-based electrostrictors. In this work, we report the key-role of acceptor dopants, with different size and valence (Mg2+, Sc3+, Gd3+, and La3+), on polycrystalline bulk ceria. Different dopants tune the electrostrictive properties by changing the electrosteric dopant–defect interactions. We find two distinct electromechanical behaviors: when the interaction is weak (dopant-vacancy binding energy ≤0.3 eV), electrostriction displays a high coefficient (M33), up to 10−17 (m V−1)2, with strongly time-dependent effects. In contrast, we observe no time-dependent effects when the interaction becomes strong (≥0.6 eV).

Graphical abstract: Electromechanical dopant–defect interaction in acceptor-doped ceria

Supplementary files

Article information

Article type
Communication
Submitted
03 Aug 2020
Accepted
06 Okt 2020
First published
06 Okt 2020
This article is Open Access
Creative Commons BY-NC license

Mater. Adv., 2020,1, 2717-2720

Electromechanical dopant–defect interaction in acceptor-doped ceria

A. Kabir, V. Buratto Tinti, M. Varenik, I. Lubomirsky and V. Esposito, Mater. Adv., 2020, 1, 2717 DOI: 10.1039/D0MA00563K

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