Surface engineering to achieve organic ternary memory with a high device yield and improved performance

Xiang Hou; Xin Xiao; Qian-Hao Zhou; Xue-Feng Cheng; Jing-Hui He; Qing-Feng Xu; Hua Li; Na-Jun Li; Dong-Yun Chen; Jian-Mei Lu

doi:10.1039/C6SC03986C

Surface engineering to achieve organic ternary memory with a high device yield and improved performance†

Xiang Hou,^a Xin Xiao,^a Qian-Hao Zhou,^a Xue-Feng Cheng,^a Jing-Hui He,*^a Qing-Feng Xu,^a Hua Li,^a Na-Jun Li,^a Dong-Yun Chen^a and Jian-Mei Lu*^a

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* Corresponding authors

^a College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology, National United Engineering Laboratory of Functionalized Environmental Adsorption Materials, Soochow University, Suzhou 215123, PR China
E-mail: jinghhe@suda.edu.cn, lujm@suda.edu.cn

Abstract

Squaraine molecules deposited on indium tin oxide (ITO) substrates modified with phosphonic acids crystalize more orderly than do those on untreated ITO. The as-fabricated electro-resistive memories show the highest ternary device yield observed to date (82%), a narrower switching voltage distribution, and better retention as well as resistance uniformity.

This article is part of the themed collections: SU 120: Celebrating 120 Years of Soochow University and Global Energy Challenges: Solar Energy

Chemical Science

Surface engineering to achieve organic ternary memory with a high device yield and improved performance†

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Surface engineering to achieve organic ternary memory with a high device yield and improved performance

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