Yinping
Teng
a,
Yuanyuan
Zhao
*b,
Zhe
Xin
a,
Liqiang
Bian
b,
Qiyao
Guo
c,
Jialong
Duan
c,
Jie
Dou
c,
Yan
Zhang
d,
Qiang
Zhang
a and
Qunwei
Tang
*c
aCollege of Mechanical and Electronic Engineering, Shandong University of Science and Technology, Qingdao 266590, PR China
bCollege of Energy Storage Technology, Shandong University of Science and Technology, Qingdao 266590, PR China. E-mail: yuanyuanzhao@sdust.edu.cn
cInstitute of Carbon Neutrality, College of Chemical and Biological Engineering, Shandong University of Science and Technology, Qingdao 266590, PR China. E-mail: tangqunwei@sdust.edu.cn
dCollege of Chemistry, Chemical Engineering and Materials Science, Shandong Normal University, Jinan 250014, PR China
First published on 16th May 2025
Achieving high-quality perovskite films with minimal defect states is critical for the development of efficient and stable perovskite solar cells (PSCs). In this work, we introduce diphenylphosphine (DPP) additives into the PbBr2 precursor solution to passivate defects and enhance device performance. By systematically varying the carbon chain length of DPP molecules, we reveal that phosphorus atoms coordinate with undercoordinated Pb2+ ions in the perovskite lattice, effectively reducing defect densities and improving film quality. The experimental results demonstrate that 1,3-bis (diphenylphosphino) propane (DPPP) with optimal carbon chain length achieves significantly improved defect passivation efficiency through enhanced lattice parameter matching with perovskite structures, whereas excessively long chains hinder performance due to steric effects. The best doping amount of DPPP with the ideal carbon chain length yields a power conversion efficiency (PCE) of 11.23% and a record open-circuit voltage (Voc) of 1.707 V. Furthermore, unencapsulated CsPbBr3 PSCs with DPPP exhibit exceptional thermal and humidity stability, maintaining more than 90% of the initial performance after 1800 h under 80 °C or 80% relative humidity.
The highest reported power conversion efficiency (PCE) of CsPbBr3 PSCs has reached 11.23%,8 but it is still significantly lower than the theoretical efficiency limit, mainly due to severe charge recombination in the film. Most of the charge recombination occurs at the grain boundaries (GBs) in the perovskite film, where shallow states near the perovskite valence band (VB) edge limit hole extraction and transfer, and provide sites for uncoordinated ionic defects, resulting in severe charge recombination.9–11 Fabricating high-quality perovskite films with large grain size and minimal GBs is an effective strategy to reduce charge recombination and improve device performance.
Adding functional additives to the precursor solution can passivate uncoordinated ionic defects, enabling the fabrication of high-quality perovskite films.12,13 Lewis base molecules comprising phosphorus (P),14 nitrogen (N),15 sulfur (S)16 and oxygen (O)17 have shown promise in passivating defects by providing electrons to uncoordinated Pb2+ ions, forming coordination covalent bonds. Theoretical calculations suggest that the binding strength with Pb2+ ions follows the order: P > N > S > O.18
In this study, we investigated the impact of different Lewis base molecules, including bis(diphenylphosphino)methane (DPPM), 1,3-bis(diphenylphosphino)propane (DPPP), and 1,5-bis(diphenylphosphino)pentane (DPPPE), on defect passivation. These molecules possess a comparable structural framework but differ in the length of the carbon chain between the two phosphorus atoms. The carbon chain length has a significant influence on the spatial matching between the two P groups and the adjacent Pb2+ ions. Specifically, DPPP, with an intermediate chain length and a P–P distance (∼5.62 Å) closely matching the Pb–Pb distance in the CsPbBr3 lattice (∼5.95 Å), enables the simultaneous coordination of two adjacent Pb2+ ions. This dual coordination effectively reduces the density of undercoordinated Pb2+ ions defects and promotes the formation of larger, more uniform grains with fewer boundaries. In contrast, DPPM and DPPPE have mismatched P–P distances (3.05 Å and 8.19 Å, respectively), limiting their ability to bridge two adjacent Pb2+ ions. As a result, the performance of CsPbBr3 PSCs improved with increasing carbon chain length from DPPM to DPPP, achieving optimal device characteristics with DPPP. However, further extension of the chain length in DPPPE diminished the coordination effectiveness, slightly compromising the device performance. Specifically, the DPPP-treated CsPbBr3 PSC device achieved a PCE of 11.23% and a record open-circuit voltage (Voc) of 1.707 V. Furthermore, the unencapsulated CsPbBr3 PSC with DPPP exhibited remarkable thermal and humidity stability over 1800 hours in ambient air at 80 °C or 80% relative humidity.
The impact of incorporating distinct diphenylphosphine (DPP) molecules into the PbBr2 precursor solution on the resulting PbBr2 film was investigated. Through top-view scanning electron microscopy (SEM), we observed that there were no significant differences in the morphology and porosity of the PbBr2 films (Fig. S2, ESI†). However, upon further cross-sectional SEM (Fig. S3, ESI†), we found that the DPP additives significantly increased the number of small pores in the PbBr2 films. These pores facilitate the complete phase transition of lead bromide to CsPbBr3, as this phase transition process involves a volumetric expansion.23 The impact of distinct DPP molecules on the surface morphology of perovskite films was investigated using SEM. After the incorporation of DPP molecules, a slight increase in grain size was observed in the perovskite film (Fig. S4, ESI†). The cross-sectional SEM image (Fig. 2b) reveals the increased grain size of the monolayer-aligned perovskite layer with a thickness of 550 nm, which is consistent with the top-view SEM.
X-ray diffraction (XRD) analysis showed that the introduction of DPP molecules did not result in the emergence of new peaks, indicating they did not enter the perovskite lattice (Fig. 2c).24 Rietveld refinement25 of the XRD patterns using pseudo-Voigt peak profiles26via the FullProf software27,28 confirmed that the addition of DPP molecules suppresses the formation of impurity phases, with DPPP exhibiting the most pronounced suppression effect (Fig. S5, ESI†). In the control group, the proportion of impurity phases, including CsPb2Br5 and, PbBr2, was relatively high at 25.98% and 3.39%, respectively. After the addition of DPP molecules, the proportion of CsPb2Br5 and PbBr2 decreased to 18.68% & 2.20%, 15.06% & 0.83%, and 17.26% & 1.30% for DPPM, DPPP, and DPPPE, respectively. This reduction in impurity phases corresponds to the improvement of the quality of the perovskite films. However, due to the intrinsic limitations of the multi-step deposition process, PbBr2-rich regions persist at the buried interface, making it difficult to completely remove the residual PbBr2 and CsPb2Br5. Interestingly, earlier research has shown that CsPb2Br5-containing CsPbBr3 PSCs have performed noticeably better than individual CsPbBr3-tailored PSCs,29,30 mostly due to the indirect-bandgap of CsPb2Br5, which suppresses electron–hole recombination.31 In comparison to the control group, the introduction of DPP molecules demonstrated a discernible enhancement effect on the (110) peak of perovskite (Fig. 2d), resulting in higher conductivity and enhanced charge carrier mobility.32,33 The UV-vis curves indicate that the addition of DPP does not alter the absorption characteristics (Fig. S6, ESI†). The reduced Urbach energy (EU) after the addition of DPP suggests a lower defect density in the film (Fig. S7 and Table S1, ESI†).
Atomic force microscopy (AFM) demonstrated that the surface roughness of the perovskite films added with DPP molecules exhibited a slight reduction in comparison to the control (Fig. 3a), with the addition of DPPP resulting in the minimal surface roughness (Ra = 10.9 nm). Kelvin probe force microscope (KPFM) is employed to ascertain the contact potential difference (CPD). As illustrated in Fig. 3b, the CPD of the control perovskite film was 1.23 V, whereas the CPD of the DPPM, DPPPE, and DPPP treated perovskite films decreased to 1.21 V, 0.814 V, and 0.7 V respectively. The decrease in CPD indicates an increase in the work function, which suppresses halide migration and enhances the stability of PSCs.34 Ultraviolet photoelectron spectroscopy (UPS) also verified the increase in work function of the DPP-treated perovskite films (Fig. S8, S9 and Table S2, ESI†). Confocal photoluminescence (PL) mapping and steady-state PL revealed that the PL intensity of the DPP-treated perovskite films is enhanced and more concentrated (Fig. 3c–e), suggesting the defect states are filled, which is conducive to charge transfer.35 The average carrier lifetime (τave) of the DPPP-treated film reached 1.87 ns, significantly longer than the 0.62 ns of the control film (Fig. 3f and Table S3, ESI†), attributed to the effective passivation of defects. Accordingly, the DPP-treated CsPbBr3 PSCs have a slower Voc decline and a longer electron lifetime (τn) than the control PSCs (Fig. S10, ESI†), indicating a decrease in charge recombination.36,37
Space charge limited current (SCLC) measurements were performed to confirm the passivation effect of DPP molecules on perovskite films. Compared to the control group with a trap density (Nt) of 9.330 × 1015 cm−3, the device added with DPPP exhibited a lower Nt of 8.534 × 1015 cm−3 (Fig. 3g and Table S4, ESI†), indicating the passivation of film defects. The J1/2–V curve (Fig. S11, ESI†) demonstrates a steeper slope for the DPP-treated devices compared to the control device. The DPPP-treated device also exhibited higher electron mobility (μe) of 1.0 × 10−4 cm2 V−1 s−1, compared to 8.7 × 10−4 cm2 V−1 s−1 for the control (Table S4, ESI†), confirming the enhancement in electron transport capability. The capacitance–voltage (C–V) curve showed a 96 mV increment in the built-in potential (Vbi) (Fig. S12, ESI†), signifying a heightened driving force for the transport and extraction of photogenerated carriers and the mitigation of carrier recombination.38–41 The water contact angle of the perovskite film with DPPP increased to 63°, compared to 47° for the control film (Fig. S13, ESI†), indicating DPPP enhances the hydrophobicity of the perovskite surface, thereby improving the stability of the device.42
The DPPP-treated CsPbBr3 PSC reached a champion PCE of 11.23% and an ultrahigh Voc of 1.707 V (Fig. 4a, S14–S16 and Table S5–S7, ESI†), which are among the highest reported for CsPbBr3-based PSCs (Fig. 4b and Table S8, ESI†). The optimized device exhibits reduced hysteresis (Fig. S17 and Table S9, ESI†), which can be ascribed to the enhanced quality of the perovskite film.43 The enhance fill factor (FF) can be attributes to the reduction of charge recombination.44 The significant improvement in Voc suggests that the addition of DPPP effectively reduces the surface defect density of perovskite films, indicating its substantial passivation effect.45 The augmented PCE is additionally corroborated by the steady-state power output (Fig. S18, ESI†), the incident photon-to-electron conversion efficiency (IPCE) (Fig. 4c), and statistical photovoltaic data (Fig. S19, ESI†).
Electrochemical impedance spectroscopy (EIS) under dark and one-sun illumination conditions was used to analyze the carrier transport dynamic (Fig. 4d and e). The PSC with DPP-treated exhibited higher charge recombination resistance (Rrec) and a lower charge transfer resistance (Rct) compared to the control (Table S10, ESI†), indicating a decreased charge recombination rate and an accelerated charge transfer process.46,47 The J–V curves under dark conditions revealed a lower leakage current density in the DPP-treated devices, further supporting the suppression of charge recombination (Fig. 4f).
The unencapsulated CsPbBr3 PSC with DPPP exhibited robust thermal and humidity stability, retaining 91.14% and 91.56% of the initial PCE after 1800 hours at 80 °C & 0% RH and 25 °C & 80% RH, respectively, outperforming the control device (Fig. 4g and h). After 600 hours at 80 °C & 80% RH, it maintained 90.32% of the initial PCE (Fig. S20†), which was also better than the control device. Under continuous LED illumination (100 mW cm−2), the PCE preservation rate of the DPPP-treated CsPbBr3 PSC (92.82%) was also significantly higher than the control (67.14%) (Fig. 4i). The initial J–V curve of the unencapsulated PSCs with the above stability test was shown in Fig. S21 (ESI).† These improvements are attributed to the large grain size, high-quality, and effective defect passivation in the DPPP-treated CsPbBr3 films.
Footnote |
† Electronic supplementary information (ESI) available: SEM, UV absorption spectra, Voc decay, electron lifetime, J1/2 curve, Mott–Schottky plots, contact angles, J–V, statistical distributions, steady-state output curve. See DOI: https://doi.org/10.1039/d5ta01594d |
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