Issue 46, 2019

Yttrium-doped CuSCN thin film transistor: synthesis and optoelectronic characterization study

Abstract

Highly efficient, solution-processable, transparent semiconductor thin films of yttrium-doped copper thiocyanate (Y(III)-CuSCN) have been developed using a simple and cost-effective modified spin coating method and investigated for their optical, electrical and electrochemical properties. The pure β-CuSCN pinhole-free compact thin films (40 nm thickness) showed ∼242 S cm−1 electrical conductivity with 0.97 root mean square surface roughness (Rrms) and an indirect bandgap of 3.72 eV. The 1 mole% Y(III)-CuSCN (65 nm thick) afforded an Rrms of 3.2 nm, with a narrowed bandgap of 3.46 eV and remarkably improved electrical conductivity of ∼566 S cm−1. Impedance studies indicated a flat-band potential of −5.19 eV and 65.3k Ω cm−2 as the interfacial charge transfer resistance for pure CuSCN. The values for the 1 mole% Y(III)-CuSCN were 14.13k Ω cm−2 for interfacial charge transport through the grains and 23.73k Ω cm−2via the grain boundaries. The hole mobility values for thin film transistor (TFT) devices were the highest among those reported for CuSCN; they were recorded as ∼0.36 cm2 V−1 s−1 and ∼0.99 cm2 V−1 s−1 for the pure and Y-doped CuSCN materials, respectively, and the on/off ratio was ∼104.

Graphical abstract: Yttrium-doped CuSCN thin film transistor: synthesis and optoelectronic characterization study

Supplementary files

Article information

Article type
Paper
Submitted
30 Sep 2019
Accepted
25 Okt 2019
First published
29 Okt 2019

J. Mater. Chem. C, 2019,7, 14543-14554

Yttrium-doped CuSCN thin film transistor: synthesis and optoelectronic characterization study

S. Baig, A. D. Hendsbee, P. Kumar, S. Ahmed and Y. Li, J. Mater. Chem. C, 2019, 7, 14543 DOI: 10.1039/C9TC05371A

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements