Nanoionics enabled atomic point contact construction and quantum conductance effects

Abstract

The miniaturization of electronic devices is important for the development of high-density and function-integrated information devices. Atomic-point-contact (APC) structures refer to narrow contact areas formed by one or more atoms between two conductive electrodes that produce quantum conductance effects when the electrons pass through the APC channel, providing a new development path for the miniaturization of information devices. Recently, nanoionics has enabled the electric field reconfiguration of APC structures in solid-state electrolytes, offering new approaches to controlling the quantum conductance states, which may lead to the development of emerging information technologies with low power consumption, high speed, and high density. This review provides an overview of APC structures with a focus on the fabrication methods enabled by nanoionics technology. In particular, the advantages of electric field-driven nanoionics in the construction of APC structures are summarized, and the influence of external fields on quantum conductance effects is discussed. Recent studies on electric field regulation of APC structures to achieve precise control of quantum conductance states are also reviewed. The potential applications of quantum conductance effects in memory, computing, and encryption-related information technologies are further explored. Finally, the challenges and future prospects of quantum conductance effects in APC structures are discussed.

Graphical abstract: Nanoionics enabled atomic point contact construction and quantum conductance effects

Article information

Article type
Review Article
Submitted
16 Jul 2024
Accepted
16 Sep 2024
First published
18 Sep 2024

Mater. Horiz., 2024, Advance Article

Nanoionics enabled atomic point contact construction and quantum conductance effects

R. Gao, X. Ye, C. Hu, Z. Zhang, X. Ji, Y. Zhang, X. Meng, H. Yang, X. Zhu and R. Li, Mater. Horiz., 2024, Advance Article , DOI: 10.1039/D4MH00916A

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