Issue 46, 2022

Solution-processed and thickness-insensitive hole transport layer for high efficiency organic solar cells

Abstract

Developing thickness-insensitive interface layers is still a challenge for meeting the requirements of large-scale production of high-performance organic solar cells (OSCs). Herein, we have prepared the solution-processed and thickness-insensitive MoOx hole transport layers (HTLs) with n-doping strategy. Two reducing agents with different volatility, i.e. volatile hydrazine hydrate (HH) and non-volatile glucose (GLC), were introduced as n-type dopants in precursor solutions of ammonium heptamolybdate tetrahydrate (AHM). It is confirmed that Mo(VI) is partially reduced to Mo(V) due to the n-doping effect in both of the MoOx films prepared from the AHM : HH and AHM : GLC precursor solutions. Electrical conductivities of both the AHM : HH and AHM : GLC films are significantly increased after optimization. Benefitting from the improved conductivity of the AHM : HH HTLs and the matched energy level alignments, the resultant devices demonstrate superior photovoltaic performance and outstanding tolerance to the AHM : HH thickness variation. When the AHM : HH HTL thickness is increased from 10 to 150 nm, the efficiency of resultant device is merely decreased about 10%. The devices based on the 150 nm-thick AHM : HH HTLs still offer a PCE of 14.35%, among the highest values for the OSCs with over 100 nm-thick HTLs reported to date.

Graphical abstract: Solution-processed and thickness-insensitive hole transport layer for high efficiency organic solar cells

Supplementary files

Article information

Article type
Paper
Submitted
10 Okt 2022
Accepted
13 Nov 2022
First published
18 Nov 2022

J. Mater. Chem. C, 2022,10, 17521-17529

Solution-processed and thickness-insensitive hole transport layer for high efficiency organic solar cells

X. Yi, H. Liu, Y. Li, Z. Liu, J. Wu, H. Tang, Y. Fu and Z. Xie, J. Mater. Chem. C, 2022, 10, 17521 DOI: 10.1039/D2TC04298C

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