Issue 30, 2022

Highly sensitive broadband photomultiplication type all-polymer photodetectors and their applications in optical pulse counting

Abstract

Broadband photomultiplication type all-polymer photodetectors (PM-APDs) are achieved on the basis of ITO/PFN-Br/PBDB-T : PYF-T-o (3 : 100, wt/wt)/LiF/Au as the configuration. Isolated hole traps are formed with PBDB-T encircled by PYF-T-o in the active layers. Trapped-holes in the vicinity of the Au electrode can cause interfacial band-bending to assist electron tunneling-injection into the active layers for achieving the PM phenomenon. The PM-APDs exhibit broad spectral response covering 310–900 nm, which is primarily dependent on the trapped-hole distribution in the vicinity of the Au electrode. The performance of PM-APDs could be improved by decreasing the active layer thickness, benefitting from the optimized electron tunneling-injection and collection. An ultrathin (∼1 nm) LiF layer is utilized as an interfacial layer to decrease electron injection barrier, leading to over one magnitude improvement of external-quantum-efficiency (EQE). The EQE of PM-APDs with the LiF layer could be increased to 18 000% at 360 nm and 9000% at 850 nm under 4 V applied bias, accompanied by the specific detectivity of 3.6 × 1012 Jones at 360 nm and 4.2 × 1012 Jones at 850 nm. The PM-APDs with the LiF layer are successfully applied in an optical pulse counting circuit, demonstrating the sensitive photodetection capability and feasibility in this practical application.

Graphical abstract: Highly sensitive broadband photomultiplication type all-polymer photodetectors and their applications in optical pulse counting

Supplementary files

Article information

Article type
Paper
Submitted
24 Mai 2022
Accepted
07 Jul 2022
First published
07 Jul 2022

J. Mater. Chem. C, 2022,10, 10888-10894

Highly sensitive broadband photomultiplication type all-polymer photodetectors and their applications in optical pulse counting

K. Yang, Z. Zhao, M. Liu, L. Niu, X. Zhao, G. Yuan, X. Ma and F. Zhang, J. Mater. Chem. C, 2022, 10, 10888 DOI: 10.1039/D2TC02144G

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