Issue 9, 2023

Bridging the inter-grain charge transport via organic semiconductors for high-performance thickness-insensitive perovskite solar cells

Abstract

The solution-processability of perovskite solar cells (PVSCs) reduces the production cost, but renders a multi-crystalline film with a large number of grain boundaries, which hinders the charge transport and induces defects. In this work, we have studied the potential of organic semiconductors for remedying the grain boundaries of perovskite films. Non-fullerene acceptors (NFAs) of different energy levels have been filled into the grain boundaries of perovskite films to form different energetic structures. It is unveiled that constructing a “flat-band” quantum well structure (FBQW, where the highest occupied molecular orbital and lowest unoccupied molecular orbital align with the valence band and conductance band, respectively), can effectively bridge the charge transport at the grain boundaries. As a result, the NFA, i.e., HFO-PCIC can obviously reduce the series resistance and enable the best device performance of over 21% based on MAPbI3 solar cells. Moreover, constructing a FBQW at the grain boundary almost fully retains the device efficiency (20.7% for the best) with a perovskite thickness over 1500 nm, which is the best result among thick PVSCs. With the thickness-insensitive merit, the fabrication of perovskites will be more tolerant to the processing conditions toward practical application. Therefore, the FBQW proposed in this work can effectively remedy inter-grain charge transport for high device performance and should pave the way for thickness-insensitive perovskite solar cells for future commercialization of PVSCs.

Graphical abstract: Bridging the inter-grain charge transport via organic semiconductors for high-performance thickness-insensitive perovskite solar cells

Supplementary files

Article information

Article type
Research Article
Submitted
31 Dez 2022
Accepted
08 Mär 2023
First published
09 Mär 2023

Mater. Chem. Front., 2023,7, 1803-1812

Bridging the inter-grain charge transport via organic semiconductors for high-performance thickness-insensitive perovskite solar cells

Y. Cao, F. Wu, C. Xu, H. Wu, S. Li, X. Wang, T. Chen, B. Peng, H. Li, H. Chen and L. Zuo, Mater. Chem. Front., 2023, 7, 1803 DOI: 10.1039/D2QM01376B

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements