Issue 41, 2014

Anisotropic growth of the thiophene-based layer on Si(111)–B

Abstract

The formation of large assemblies on the Si(111)–B surface is discussed with the help of STM simulations and DFT calculations. Although highly regular assemblies of DTB10B along the Si row direction are observed, the existence of two herringbone isomers introduces a lower periodicity within the 2D molecular network. The formation of herringbone units is explained by weak intermolecular interactions while the 1D assembling depends mainly on the interactions of the C10 side chains with the Si(111)–B surface.

Graphical abstract: Anisotropic growth of the thiophene-based layer on Si(111)–B

Supplementary files

Article information

Article type
Communication
Submitted
05 Mär 2014
Accepted
30 Mär 2014
First published
03 Apr 2014

Chem. Commun., 2014,50, 5484-5486

Author version available

Anisotropic growth of the thiophene-based layer on Si(111)–B

A. Rochefort, Y. Makoudi, A. Maillard, J. Jeannoutot, J. Blier, F. Chérioux and F. Palmino, Chem. Commun., 2014, 50, 5484 DOI: 10.1039/C4CC01674B

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