Issue 30, 2024

Lateral homojunctions of WSe2 through contact surface engineering with SF6 plasma etching

Abstract

Herein, we report a simple contact surface pre-treatment, i.e. SF6 plasma dry-etching, to achieve efficient n-doping in CVD-grown two-dimensional multilayer WSe2 nanosheets as well as to build lateral p–n homojunctions with single-metal Nb contacts. The lateral homodiodes exhibit high rectification ratios over 104 and excellent photovoltaic properties with the maximum open circuit voltage reaching up to 350–450 mV. This makes WSe2-based homodiodes superb self-powered photodetectors for wide-spectrum (from visible to near-infrared) wavelengths, with a photoresponsivity over 100 mA W−1 and a fast response speed of 10 μs. The realization of highly efficient n-doping in the CVD-grown WSe2 semiconductor and high-performance photodiodes via implementing plasma dry-etching, a standard semiconductor processing, would foresee a promising future for its practical implementation in scale-up production of 2D semiconductor nanoelectronics integrated chips.

Graphical abstract: Lateral homojunctions of WSe2 through contact surface engineering with SF6 plasma etching

Supplementary files

Article information

Article type
Paper
Submitted
16 mar 2024
Accepted
20 jun 2024
First published
21 jun 2024

J. Mater. Chem. C, 2024,12, 11474-11483

Lateral homojunctions of WSe2 through contact surface engineering with SF6 plasma etching

Y. Li, H. Wang, X. Yang and W. Zhang, J. Mater. Chem. C, 2024, 12, 11474 DOI: 10.1039/D4TC01048E

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