Issue 12, 2021

Recent progress on kinetic control of chemical vapor deposition growth of high-quality wafer-scale transition metal dichalcogenides

Abstract

2D transition metal dichalcogenides (TMDs) have attracted significant attention due to their unique physical properties. Chemical vapor deposition (CVD) is generally a promising method to prepare ideal TMD films with high uniformity, large domain size, good single-crystallinity, etc., at wafer-scale for commercial uses. However, the CVD-grown TMD samples often suffer from poor quality due to the improper control of reaction kinetics and lack of understanding about the phenomenon. In this review, we focus on several key challenges in the controllable CVD fabrication of high-quality wafer-scale TMD films and highlight the importance of the control of precursor concentration, nucleation density, and oriented growth. The remaining difficulties in the field and prospective directions of the related topics are further summarized.

Graphical abstract: Recent progress on kinetic control of chemical vapor deposition growth of high-quality wafer-scale transition metal dichalcogenides

Article information

Article type
Minireview
Submitted
06 mar 2021
Accepted
04 maj 2021
First published
05 maj 2021
This article is Open Access
Creative Commons BY license

Nanoscale Adv., 2021,3, 3430-3440

Recent progress on kinetic control of chemical vapor deposition growth of high-quality wafer-scale transition metal dichalcogenides

Q. Wang, R. Shi, Y. Zhao, R. Huang, Z. Wang, A. Amini and C. Cheng, Nanoscale Adv., 2021, 3, 3430 DOI: 10.1039/D1NA00171J

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