Issue 29, 2021

Vapor–liquid–solid growth of 4H-SiC single crystal films with extremely low carrier densities in chemical vapor deposition with a Pt–Si alloy flux and X-ray topography analysis of their dislocation propagation behaviors

Abstract

A vapor–liquid–solid (VLS) mechanism has been successfully applied to homoepitaxial growth of 4H-SiC films in chemical vapor deposition (CVD), to which the key is the use of a Si–Pt alloy flux in the CVD–VLS process. The n-type residual carrier density in the VLS-grown SiC films could be reduced down to the order of 1015 cm−3 despite possible concern about impurities working as dopants incorporated into VLS-grown films. The surface morphology essentially exhibited a bunched step-and-terrace structure, as similarly observed in solution-grown SiC crystals. Furthermore, the dislocation propagation behaviors, investigated by X-ray topography analysis, were also rather similar in solution growth processes, but different from those in conventional CVD processes. That is, threading dislocations can be converted to basal plane dislocations in their propagation in the CVD–VLS process, illustrating its potential to effectively reduce the total dislocation density in the resultant SiC thick films.

Graphical abstract: Vapor–liquid–solid growth of 4H-SiC single crystal films with extremely low carrier densities in chemical vapor deposition with a Pt–Si alloy flux and X-ray topography analysis of their dislocation propagation behaviors

Article information

Article type
Communication
Submitted
10 maj 2021
Accepted
23 jun 2021
First published
24 jun 2021

CrystEngComm, 2021,23, 5039-5044

Author version available

Vapor–liquid–solid growth of 4H-SiC single crystal films with extremely low carrier densities in chemical vapor deposition with a Pt–Si alloy flux and X-ray topography analysis of their dislocation propagation behaviors

N. Sanoodo, T. Kato, Y. Yonezawa, K. Kojima and Y. Matsumoto, CrystEngComm, 2021, 23, 5039 DOI: 10.1039/D1CE00625H

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