Issue 29, 2016

Tailoring the electrical and photo-electrical properties of a WS2 field effect transistor by selective n-type chemical doping

Abstract

Here, we demonstrate a doping technique which remarkably improves the electrical and photoelectric characteristics of a WS2 field effect transistor (FET) by chemical doping. The shift of the threshold voltage towards a negative gate voltage and the red shift of the E12g and A1g peaks in the Raman spectra confirm the n-type doping effect in WS2 FETs. WS2 films show an unprecedented high mobility of 255 cm2 V−1 s−1 at room temperature. The on/off ratio of the output current is ∼108 at room temperature. The mobility of a multilayer ML-WS2 FET was found to be 425 cm2 V−1 s−1 at 5 K. Semiconductor-to-metal transitions were also observed at Vbg > 30 V. A decrease in contact and sheet resistance was observed after potassium iodide (KI) doping. The photocurrent in WS2 FETs was also enhanced after n-type doping. Chemical doping exhibited a very stable, effective, and easy-to-apply method to enhance the performance of a WS2 FET.

Graphical abstract: Tailoring the electrical and photo-electrical properties of a WS2 field effect transistor by selective n-type chemical doping

Supplementary files

Article information

Article type
Paper
Submitted
26 jan 2016
Accepted
25 feb 2016
First published
26 feb 2016

RSC Adv., 2016,6, 24675-24682

Tailoring the electrical and photo-electrical properties of a WS2 field effect transistor by selective n-type chemical doping

M. W. Iqbal, M. Z. Iqbal, M. F. Khan, M. A. Kamran, A. Majid, T. Alharbi and J. Eom, RSC Adv., 2016, 6, 24675 DOI: 10.1039/C6RA02390H

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