Issue 13, 2016

Chemical energy dissipation at surfaces under UHV and high pressure conditions studied using metal–insulator–metal and similar devices

Abstract

Metal heterostructures have been used in recent years to gain insights into the relevance of energy dissipation into electronic degrees of freedom in surface chemistry. Non-adiabaticity in the surface chemistry results in the creation of electron–hole pairs, the number and energetic distribution of which need to be studied in detail. Several types of devices, such as metal–insulator–metal, metal–semiconductor and metal–semiconductor oxide–semiconductor, have been used. These devices operate by spatially separating the electrons from the holes, as an internal barrier allows only – or at least favours – transport from the top to the back electrode for one kind of carrier. An introduction into the matter, a survey of the literature and a critical discussion of the state of research is attempted.

Graphical abstract: Chemical energy dissipation at surfaces under UHV and high pressure conditions studied using metal–insulator–metal and similar devices

Article information

Article type
Review Article
Submitted
23 dec 2015
First published
17 maj 2016
This article is Open Access
Creative Commons BY-NC license

Chem. Soc. Rev., 2016,45, 3747-3755

Author version available

Chemical energy dissipation at surfaces under UHV and high pressure conditions studied using metal–insulator–metal and similar devices

D. Diesing and E. Hasselbrink, Chem. Soc. Rev., 2016, 45, 3747 DOI: 10.1039/C5CS00932D

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