Indium-doped α-Ga2O3 nanorod arrays for ultra-sensitive solar-blind UV photodetector

Abstract

Ultra-wide bandgap Ga2O3 semiconductor has emerged as a promising candidate for next-generation solar-blind UV photodetection, making it in potential applications such as fire alarms, optical communication, and UV imaging. However, the very slow response has prevented further commercialization of Ga2O3 photodetectors. Here, we designed a solar-blind UV photodetector based on In-doped Ga2O3 arrays, demonstrating competitive performances with excellent photoelectric response time of 24.8 ms (rise) and 27.6 ms (descend), high detectivity (1.55×1014 Jones), and high responsivity of 30.1 A/W. Space charge limiting current (SCLC) measurements reveal that In-doped Ga2O3 can decrease the trap state density of photo-generated carriers during transporting. Besides, the photodetectors can maintain high performance under the light intensity of 1.5 μW/cm2. The distinct solar-blind UV imaging and optical communication ability in In-doped Ga2O3 photodetectors reveal their significant potential for future applications.