Andrei
Mitrofanov
ab,
Khrystyna
Rymsha
a,
Dmitrii
Sychev
ac,
Karina
Zakirova
ac,
Petr
Formanek
a,
Darius
Pohl
d,
Eva
Bittrich
a,
Ilka M.
Hermes
a,
Quinn A.
Besford
*a and
Brigitte
Voit
*ab
aLeibniz-Institut für Polymerforschung Dresden e.V., Hohe Str. 6, Dresden 01069, Germany. E-mail: besford@ipfdd.de; voit@ipfdd.de
bChair of Organic Chemistry of Polymers, TUD Dresden University of Technology, Dresden 01069, Germany
cFaculty of Chemistry and Food Chemistry, TUD Dresden University of Technology, Dresden 01062, Germany
dDresden Center for Nanoanalysis (DCN), Dresden, Center for Advancing Electronics Dresden (cfaed), TUD Dresden University of Technology, Dresden 01062, Germany
First published on 21st December 2023
Halide perovskites have attracted significant attention as cutting-edge semiconducting materials, particularly as ultrathin layers for optoelectronic applications. However, producing these materials in a controlled way when the nature of the cation is varied, has posed numerous challenges. Herein, we explored the use of aminated silane modification for the controlled growth of perovskite nanosheets (NSs) containing bivalent conjugated cations (1,5-diaminonaphthalene) as new semiconducting materials. Surface modification implementation enabled achieving a higher degree of control over the morphology and lateral dimensions of NSs and obtaining micrometer-size particles with uniform thickness. Kelvin-probe force microscopy investigations demonstrated photo-induced charge generation, where the NSs exhibited significantly changed, and mostly reversible, surface potential under ultraviolet illumination, thereby providing proof of concept for these materials in photodetector applications.
It has been reported that 2D perovskites prepared in the few-layer ultrathin form possess thickness-dependent properties on the few monolayer level, for example, structural relaxation and corresponding PL blue shift,17 increased exciton binding energy, and suppressed thermally driven phase transition.18 Moreover, 2D morphology of ultrathin perovskites favours the investigation of quantum confinement effect and enables the study of lateral growth to understand the effect on final properties.19 These ultrathin 2D perovskites are expected to be used for next-generation multifunctional devices, for example, as emissive layers in light-emitting diodes, absorption layers in photodetectors or spin channels in spintronic devices.20 Within the last decade, many different approaches were developed for the growth of few-monolayer 2D perovskites, including ligand-assisted reprecipitation,11,21 ternary co-solvent method,17 antisolvent-assisted crystallization,22 and high-vacuum exfoliation.23 So far, the primary emphasis has been on perovskite materials with monovalent organic cations. In this case, the inorganic part is sandwiched by two organic layers of monofunctional molecules, making it easier to obtain the atomically thin nanosheets (NSs). At the same time, the controllable growth of perovskite NSs with bifunctional cations will expand the range of available compositions. Additionally, diammonium cations interacting with two adjacent inorganic layers can significantly enhance perovskite humidity and heat stability.24
Controllable growth of the NSs can be limited due to the weak adhesion between perovskites and the anchoring substrate material. To enhance the contact, and ultimately the perovskite crystal growth, the substrate surface can be modified with anchoring molecules like amino acids25 or organic silanes.26 Introduced anchor moieties (e.g., amine groups) exhibit stronger electrostatic interactions with the perovskite materials, resulting in larger and more uniform materials with improved mechanical and electrical connectivity. So far, this approach has been used to grow macroscopic perovskite crystals27 and thin films.26
In this work, we demonstrate a surface-assisted approach combined with a fast crystallization method for the synthesis of micrometer-sized perovskite NSs containing 1,5-diaminonaphthalene (1,5-DAN), which belongs to a small group of conjugated aromatic diammonium cations that can stabilize 2D perovskite structure.28 An amine-terminated silane molecule was used as a substrate modification to achieve better control over the growth of Dion-Jacobson perovskite NSs. The obtained (1,5-DAN)PbI4 NSs were several layers thick, as round-shaped particles, which exhibited a pronounced response to photoexcitation during Kelvin probe force microscopy, illustrating their suitability for application as photodetectors.
The APTES molecules undergo a condensation reaction with the hydroxyl groups on the substrate (Si wafer, glass) surface. Compared to liquid-phase deposition, vapor deposition treatment provides a higher amine density on the substrate surface and more homogeneous and smoother films of APTES.29
The preparation of perovskite NSs with our bivalent 1,5-diaminonaphthalene ligand was carried out using the solvent evaporation method, first reported by Dou et al.,17 and adjusted in the later works of the same group.14,30,32 For the synthesis of NSs, a quaternary solvent system consisting of dimethylformamide (DMF), chlorobenzene (CB), acetonitrile (AN), and dichlorobenzene (DCB) was chosen. DMF is a suitable solvent for the perovskite systems, whereas CB causes precipitation of the perovskite crystals, and the AN tends to have an intermediate position. The role of AN and DCB, as discussed earlier,17,32 is to moderate the processes of the dissolution and crystallization of the perovskite NSs. Having a lower boiling point, AN evaporates first, reducing the solubility of perovskite and initiating crystallization. DCB has a higher boiling point than other solvents used, and its addition helps to prevent the increase in solution concentration after AN and CB evaporate, which allows a more uniform distribution of NSs on the substrate.
Fig. 2 shows SEM images of the perovskite particles grown using the solvent evaporation approach on the Si wafers with and without APTES modification. The particles grown on the non-modified substrate represent needles of different thicknesses and average lengths of 25 μm (Fig. 2a and c). In contrast, the sheets obtained on the APTES-modified Si wafer are round-shaped with irregular edges and an average diameter of 3 μm (Fig. 2b and d).
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Fig. 2 SEM images of perovskite particles and sheets grown on unmodified (a) and (c) and APTES-modified (b) and (d) Si wafer. |
Using the approach, we could successfully grow the NSs on different substrates such as Si wafers, SiOx-coated copper TEM grids (see below, Fig. 4b and c), and ITO glass (see below, Fig. 6).
The thickness and morphology of the NSs were imaged using topographic AFM. Fig. 3 demonstrates the variation in NS thicknesses grown at RT on the modified Si substrate. The AFM images reveal round-shaped sheets with almost flat surfaces and an average height of around 40 nm. The thinnest part of the NSs was about 30 nm, related to the approx. 25 perovskite layers of (1,5-DAN)PbI4 (Fig. S1, ESI†).
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Fig. 4 Structure characterization of the obtained NSs. (a) Comparison of GIWAXS pattern from (1,5-DAN)PbI4 NSs and bulk reference (single crystal), (b) and (c) TEM images of the NSs grown on the modified TEM grid, (d) SAED patterns of the NS (displayed in Fig. 4c), and (e) bulk reference. |
The temperature of evaporation and concentration of precursors (PbI2 and (1,5-DAN)I2) strongly affect the growth of NSs. Whereas the (1,5-DAN)PbI4 NSs grown at mild conditions (RT) have regular shapes and uniform thickness, the higher temperature (50 °C) produced non-uniform sheets (Fig. S2b, ESI†), indicating inhomogeneous growth due to faster solvent evaporation. The optimal precursor concentration was 5 mM. The higher concentration (10 mM) led to thicker NSs or caused the formation of stacks (Fig. S3c, ESI†). The solution with a concentration of 20 mM reached the solubility limit after adding the CB/AN/DCB mixture. A lower concentration (2.5 mM) gave only small spherical particles (Fig. S3a, ESI†). For the crystal structure determination, grazing incidence wide-angle X-ray scattering (GIWAXS) and electron diffraction in TEM were used. The GIWAXS pattern (Fig. 4a) demonstrates that the NSs give pronounced peaks at 6.2° and 12.3° corresponding to the d spacing of 1.43 nm and indicating highly oriented sheets. The spacing is greater than the one calculated for the bulk form (single crystal) of this material.13 The (1,5-DAN)PbI4 in the bulk form possesses a highly distorted lattice with a Pb–I–Pb bond angle of 150.67° (Fig. S4, ESI†), which is assumed to be relaxed in the NSs, realized probably through the organic cation rearrangement, and changing of the corresponding crystal parameters. This phenomenon has been previously reported for (C4H9NH3)2PbBr4 perovskite sheets.17 We did not observe a sharp peak at 12.7° typical for PbI2 (001) planes, which indicates the absence of a distinct lead iodide phase in the NSs. Additional structure characterization was done by selected area electron diffraction (SAED) using TEM. For that, the (1,5-DAN)PbI4 NSs were grown directly on the APTES-modified SiOx-coated copper grid. Fig. 4b–e shows the TEM images and one-fourth of the SAED pattern of the NSs. SAED pattern (Fig. 4d and e) is represented by concentric rings, indicating the polycrystalline nature of the NSs and showing the similarity between NSs and the bulk phase.
A STEM-EDX analysis was performed to get better insight into the composition of synthesized (1,5-DAN)PbI4 perovskite NSs. The TEM image of NS and elemental mapping images of lead, iodine, carbon and nitrogen are shown in Fig. 5. The elements are all present in the NS, and elemental distribution is uniform throughout almost the whole sheet. The Pb/I ratio is 1:
2.4 (Fig. S5, ESI†), which is lower than the expected stoichiometry (1
:
4), probably because of the volatilization of I-with organic species.33
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Fig. 5 (a) TEM image and (b)–(e) elemental maps calculated from STEM-EDX measurements. The NSs were grown on the modified SiO2-coated copper grid. Fig. S5 (ESI†) shows the corresponding STEM image and EDX spectrum. Note the distortion of the STEM image in comparison to the TEM image caused by the drift during STEM-EDX acquisition. |
To get an insight into the material's electronic photoresponse, we used Kelvin-probe force microscopy (KPFM) to study the perovskite NSs under illumination with monochromatic light of 405 nm (Fig. 6 and Fig. S6, ESI†) and 458 nm wavelength (Fig. S7, ESI†). Fig. 6b–f shows a KPFM image on (1,5-DAN)PbI4 NSs grown on the modified ITO substrate. The mean contact potential difference (CPD) measured under illumination (Fig. 6b) dropped by approx. 73 mV compared to the dark CPD (Fig. S6d, ESI†). Due to the band-bending at the surface, the photogenerated charge carriers are redistributed in space, resulting in the changed surface potential.
After the measurement under illumination, the laser was turned off, and dark measurement was done 50 min later (Fig. 6c). No changes in the morphology of the NSs during the KPFM experiment were observed (Fig. S6, ESI†). Subsequent measurements under illumination with a 458 nm laser (Fig. S7e, ESI†) revealed no detectable response, with the difference between the initial state and during the illumination was approximately 8 mV, below the detection limit of our set-up. The following measurement again under 405 nm illumination (Fig. 6d) showed the more negative CPD, with the difference prior to the second 405 nm illumination and during the second 405 nm illumination was approximately 0.12 V, indicating that the photogeneration process was repeatable and 405 nm illumination served more effective for such purpose. After the following dark measurement (Fig. 6e) the contrast between sheets and substrate became weaker compared to the illuminated state, with corresponding growth of the CPD to the intermediate value that was approximately 60 mV lower than the initial value before the illumination. The third 405 nm illumination resulted in the lowest CPD value which was 0.021 V lower than the second and 0.049 V lower than the CPD value during the first illumination. It may indicate that the generated charge carriers during the illumination period are trapped within the perovskite structure, making the initial state before the illumination not reachable after more than two illumination cycles.
The surface photovoltage (SPV), defined as the illumination-induced change in surface potential, equals the difference between CPDlight and CPDdark. The sign of the SPV determines the polarity of the sample surface.34,35 For p-type semiconductors, a negative SPV arises under illumination. SPV is positive for the n-type semiconductor. In our experiment, negative SPV values were observed throughout the whole sheets, suggesting the p-type nature of the material. In general, such change in the SPV can be attributed to the increased number of photogenerated charge carriers. This effect, observed by KPFM, allows us to assume enhanced charge carrier concentration and thus conductivity of NSs under illumination.
Footnote |
† Electronic supplementary information (ESI) available: SEM images of NSs grown at different temperatures and initial precursor concentrations; the structure of layered perovskite; degree of structure distortion; STEM image with EDX spectrum; additional KPFM images. See DOI: https://doi.org/10.1039/d3tc04080a |
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